NOVEL SEMICONDUCTOR SUBSTRATE FORMED BY HYDROGEN-ION IMPLANTATION INTO SILICON (VOL 55, PG 2223, 1989)
| Data(s) |
1995
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
LI JM .NOVEL SEMICONDUCTOR SUBSTRATE FORMED BY HYDROGEN-ION IMPLANTATION INTO SILICON (VOL 55, PG 2223, 1989) ,APPLIED PHYSICS LETTERS ,1995,67(3):444-444 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
