Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide

A bilayer CdS/ITO film was obtained. The dipped CdS was grown by an ultrasonic colloid deposition (USCD) method. Microstructure of the CdS film made by USCD has a wider transmission range and a higher transmittance. Amorphous indium-tin-oxide (ITO) thin film was deposited using d.c. magnetron-sputtering at room temperature. The ITO films exhibited good conductivity and maximum transmittance of 94%. The CdS/ITO bilayer was investigated by means of GIXD (grazing incidence X-ray diffraction) at different incidence angles (alpha = 0.20-5.00degrees) and XRD. We discuss a model for the thin bilayer film. SEM and AFM show that homogeneous CdS films with a bar-shaped ultrafine particles and ITO film with nanometer structure. The mechanism of the bilayer CdS/ITO film is discussed.

Trapping of neutral Rb-87 atoms on an atomchip

We report an experiment of trapping of neutral Rb-87 atoms on a, self-made atomchip. The H-shaped atomchip is made by magnetron sputtering technology, which is different from the atomchip technology of other teams. We collect 3 x 10(6) Rb-87 atoms in the mirror magneto-optical trap (MOT) using the external MOT coils, and 1 X 10(5) Rb-87 atoms are transferred to U-MOT using U-shaped wire in chip and a pair of bias coils.

Analysis on the spin reorientation of GdFeCo/DyFeCo exchange-coupled double-layer films

In this paper, GdFeCo/DyFeCo exchange-coupled double-layer films used for center aperture type magnetically induced super resolution were investigated through experiments and theoretical calculation. The samples were prepared by magnetron sputtering method. The polar Kerr effect was measured to prove the spin reorientation of the readout layer. Theoretical study of magnetization profiles was performed on the basis of the mean-field theory and the continuum model. The theoretical results showed that the magnetization orientation of the readout layer changed gradually from in-plane to out-of-plane with the rise of the temperature. Theoretical analysis explained the experimental results successfully. (c) 2005 Elsevier B.V. All rights reserved.

新型AgInSbTe相变薄膜的结晶活化能研究

利用磁控溅射法制备了新型AgInSbTe相变薄膜，热处理前后的X射线衍射(XRD)表明了薄膜在热作用下从非晶态转变到晶态．通过非晶态薄膜粉末的示差扫描量热(DSC)实验测定了不同升温速率条件下的结晶峰温度，计算了粉末的摩尔结晶活化能、原子激活能和频率因子,从结晶活化能E可以判断出新型AgInSbTe相变薄膜具有较高的结晶速度，可以用于高速可擦重写相变光盘．

Optical properties and structure of Sb-rich AgInSbTe phase change thin films

A new composition content quaternary-alloy-based phase change thin film, Sb-rich AgInSbTe, has been prepared by DC-magnetron sputtering on a K9 glass substrate. After the film has been subsequently annealed at 200degreesC for 30 min, it becomes a crystalline thin film. The diffraction peak of antimony (Sb) are observed by shallow (0.5 degree) x-ray diffraction in the quaternary alloy thin film. The analyses of the measurement from differential scanning calorimetry (DSC) show that the crystallization temperature of the phase change thin film is about 190degreesC and increases with the heating rate. By Kissinger plot, the activation energy for crystallization is determined to be 3.05eV. The reflectivity, refractive index and extinction coefficient of the crystalline and amorphous phase change thin films are presented. The optical absorption coefficient of the phase change thin films as a function of photon energy is obtained from the extinction coefficient. The optical band gaps of the amorphous and crystallization phase change thin films are 0.265eV and 1.127eV, respectively.

SbOx thin films used for write-once blue laser recording

SbOx thin films are deposited by reactive dc-magnetron sputtering from all antimony metal target in Ar+O-2 with the relative O-2 content 7%. It is found that the as-deposited films call represent a two-component system comprising amorphous Sb and amorphous Sb2O3. The crystallization of Sb is responsible for the changes of optical properties of the films. The results of the static, test show that the SbOx thin films have good writing sensitivity for blue laser beams and the recording marks are very clear and circular. High reflectivity contrast of about 41% is obtained at a writing power 6 mW and writing pulse width 300 ns. In addition, the films show a good stability after reading 10000 times.

Influence of thermal annealing on optical properties and surface morphology of NiOx thin films

NiOx thin films were deposited by reactive DC-magnetron sputtering from a nickel metal target in Ar + O-2 with the relative O-2 content of 5%. Thermal annealing effects on optical properties and surface morphology of NiOx, films were investigated by X-ray photoelectron spectroscopy, thermogravimetric analysis, scanning electron microscope and optical measurement. The results showed that the changes in optical properties and surface morphology depended on the temperature. The surface morphology of the films changed obviously as the annealing temperature increased due to the reaction NiOx -> NiO + O-2 releasing O-2. The surface morphology change was responsible for the variation of the optical properties of the films. The optical contrast between the as-deposited films and 400 degrees C annealed films was about 52%. In addition, the relationship of the optical energy band gap with the variation of annealing temperature was studied. (c) 2006 Elsevier B.V. All rights reserved.

热致NiOx薄膜的结构和光学性质变化

利用直流磁控反应溅射技术制备了氧气和氩气的分压比为5:100的NiOx薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)和光谱仪研究了热处理对薄膜的微观结构和光学性质的影响, 并对沉积态薄膜的粉末进行了热分析。沉积态的NiOx薄膜在262 ℃时开始分解, 导致NiOx薄膜的透过率增加和反射率降低。X射线衍射和示差扫描量热曲线(DSC)分析表明, 在热处理过程中并无物相的变化, 光学性质的变化是由于NiOx薄膜热分解引起薄膜表面形貌发生变化而引起的。通过Kissinger公式计算出

氧化铋薄膜用于蓝光可录存储的研究

利用直流磁控溅射法在不同氧氩分压比条件下制备了BiOx薄膜。通过对薄膜在蓝光作用前后的反射率对比度变化的研究发现，氧氩分压比为50％时制备的薄膜具有最佳的光学对比度。利用X射线衍射仪(XRD)、X光电子能谱(XPS)和光谱仪研究了薄膜热处理前后的结构和光谱性质的变化。研究结果表明薄膜光学性质变化主要由薄膜中氧化铋的相变引起。蓝光静态测试结果显示氧氩分压比为50％条件下制备的BiOx薄膜具有很好好的记录敏感度，在11mW的记录功率和800ns的记录脉宽条件下，得到了52％的反射率对比度。此外，BiOx薄膜表现出了非常好的读出稳定性。

激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化

研究了激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化,当激光功率为580mW时薄膜的方块电阻有四个数量级（10^7～10^3Ω/□）的突变;对电阻发生突变前、中、后的三个样品进行了XRD测试,结果表明,随着激光功率的增大,薄膜由非晶态向晶态转变,用椭偏仪测试了结构转变前、中、后三个样品的光学常数,在可见光范围内薄膜的光学常数在波长相同情况下有：n（非晶态）〉n（中间态）〉n（晶态）,k（晶态）〉k（中间态）〉k（非晶态）,α（晶态）〉α（中间态）〉α（非晶态）,结合电阻变化曲线和XRD图谱讨论了激光辐照Ge2Sb2Te5非晶态薄膜的电/光性质变化同激光功率和结构转变之间的关系.

Si underlayer induced nano-ablation in AgInSbTe thin films

AgInSbTelSi thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70nm in the AgInSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Si（111）衬底上ZnO薄膜的磁控溅射法制备及表征

采用磁控溅射法在(111)单晶硅衬底上沉积了ZnO薄膜，并研究了退火温度对ZnO薄膜晶体质量、晶粒度大小、应力和光致发光谱的影响。X射线衍射(XRD)表明薄膜为高度c轴择优取向。不同退火温度下的ZnO薄膜应力有明显变化。应力分布最为均匀的退火温度为500℃。室温下对ZnO薄膜进行了光谱分析，可观测到明显的紫光发射(波长为380nm左右)。实验结果表明，用磁控溅射法在单晶硅衬底上能获得高质量的ZnO薄膜。

射频磁控溅射法制备TiO2-xNX薄膜的结构性能研究

利用射频磁控溅射法室温下在Si（100）衬底上制备了N掺杂的TiO2薄膜，并且采用x射线衍射（XRD）、X射线光电子能谱（XPS）和透射光谱对薄膜进行了表征。XRD结果表明在纯Ar和N2（33．3％）／Ar气氛下制备的TiO2-xNx薄膜均为单一的金红石相，薄膜结晶性良好，呈高度（211）择优取向，而在N2（50．0％）／Ar下制备的薄膜结晶性明显变差；对于N掺杂的TiO2薄膜，XPS表明部分N原子进入TiO2晶格，并且以N—Ti—O、N—O键以及间隙式N原子形式存在；透射光谱表明掺N后的TiO2薄膜吸收边发生了红移。

非晶硅薄膜制备及其晶化特性研究

用磁控溅射法在K9玻璃上沉积了非晶硅（a—Si）膜和a—Si／Al膜，并将其在流动的N2气氛下进行退火。对退火前后的样品进行Raman光谱、XRD和SEM表征和分析。Raman光谱表明随着退火温度的升高，a-Si膜的散射峰出现了明显的蓝移，但XRD结果表明薄膜仍为非晶态；而a—Si／Al膜在温度很低时就已经开始晶化。