Design and numerical analysis for low birefringence silica on silicon waveguides

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Metal-semiconductor-metal (MSM) structures were fabricated by RF-plasma-assisted MBE using different buffer layer structures. One type of buffer structure consists of an AlN high-temperature buffer layer (HTBL) and a GaN intermediate temperature buffer layer (ITBL), another buffer structure consists of just a single A IN HTBL. Systematic measurements in the flicker noise and deep level transient Fourier spectroscopy (DLTFS) measurements were used to characterize the defect properties in the films. Both the noise and DLTFS measurements indicate improved properties for devices fabricated with the use of ITBL and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (C) 2003 Elsevier Ltd. All rights reserved.

Low power design in 100 MHz embedded SRAM

Low power design method is used in a 100MHz embedded SRAM. The embedded SRAM used in a FFT chip is divided into 16 blocks. Two-level decoders are used and only one block can be selected at one time by tristate control circuits, while other blocks are set stand-by. The SRAM cell has been optimized and the cell area has been minimized at the same time.

Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

We fabricate an electro-absorption modulator for optical network system using a new strategy, the improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (> 40dB) and low capacitance (C <0.6pF) which can achieve an ultra-high frequency(> 10GHz). The device is be used in 10Gbps optical time division multiplex (OTDM) system as a signal generator.

High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers

980nm InGaAs/InGaAsP/AlGaAs strained quantum well lasers,vitta novel large optical cavity and asymmetrical claddings was fabricated bg MOCVD. Very high differential quantum efficiency elf 90% (1.15W/A) and low vertical divergence angle of 24 degrees at long cavity length were obtained for 100 mu m stripe lasers. The differential quantum efficiency is up to 94% (1.20) at cavity length of 500 mu m.

The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process

High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

Fabrication of Novel Superhydrophobic Surfaces and Water Droplet Bouncing Behavior - Part 1: Stable ZnO-PDMS Superhydrophobic Surface with Low Hysteresis Constructed Using ZnO Nanoparticles

A superhydrophobic surface has many advantages in micro/nanomechanical applications, such as low adhesion, low friction and high restitution coefficient, etc. In this paper, we introduce a novel and simple route to fabricate superhydrophobic surfaces using ZnO nanocrystals. First, tetrapod-like ZnO nanocrystals were prepared via a one-step, direct chemical vapor deposition (CVD) approach. The nanostructured ZnO material was characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD) and the surface functionalized by aminopropyltriethoxysilane (APS) was found to be hydrophobic. Then the superhydrophobic surface was constructed by depositing uniformly ZnO hydrophobic nanoparticles (HNPs) on the Poly(dimethylsiloxane) (PDMS) film substrate. Water wettability study revealed a contact angle of 155.4 +/- 2 degrees for the superhydrophobic surface while about 110 degrees for pure smooth PDMS films. The hysteresis was quite low, only 3.1 +/- 0.3 degrees. Microscopic observations showed that the surface was covered by micro- and nano-scale ZnO particles. Compared to other approaches, this method is rather convenient and can be used to obtain a large area superhydrophobic surface. The high contact angle and low hysteresis could be attributed to the micro/nano structures of ZnO material; besides, the superhydrophobic property of the as-constructed ZnO-PDMS surface could be maintained for at least 6 months. (C) Koninklijke Brill NV, Leiden, 2010

Fiber Bragg Grating Sensor for Strain Sensing in Low Temperature Superconducting Magnet

Fiber Bragg grating (FBG) sensor for monitoring the electromagnetic strain in a low temperature superconducting (LTS) magnet was studied. Before used to LTS magnet strain sensing, the strain response of the sensor with 1.54-mu m wavelength at liquid helium was experimentally studied. It was found that the wavelength shift showed good linearity with longitudinal applied loads and the strain sensitivity is constant at 4.2 K. And then, the hoop strain measurement of a LTS magnet was carried out on the basis of measured results. Furthermore, the finite element method (FEM) was used to simulate the magnet strain. The difference between the experimental and numerical analysis results is very small.

Protective effects of melatonin against low- and high-LET irradiation

To investigate the protective effects of melatonin against high-LET ionizing radiation, V79 Chinese hamster cells were irradiated with 100 keV/mu m carbon beam. Parallel experiments were performed with 200 kV X-rays. To avoid the impact from extra solvents, melatonin was dissolved directly in culture medium. Cells were cultured in melatonin medium for 1 hr before irradiation. Cell inactivation was measured with conventional colony forming assay, medium containing 6-thioguanine was used for the selection of mutants at hprt locus, and the cell cycle was monitored by flow cytometry. Both carbon beam and X-rays induced cell inactivation, hprt gene mutation and cell cycle G2 block dose-dependently. But carbon beam showed stronger effects as indicated by all three endpoints and the relative biological effectiveness (RBE) was 3.5 for cell killing (at 10% survival level) and 2.9 for mutation induction (at 5 x 10(-5) mutants/ cell level). Melatonin showed protective effects against ionizing radiation in a dose-dependent manner. In terms of cell killing, melatonin only increased the survival level of those samples exposed to 8Gy or larger of X-rays or 6 Gy or larger of carbon beam. In the induction of hprt mutation and G2 block, melatonin reduced such effects induced by carbon beam but not by X-rays. The results suggest that melatonin reduces the direct interaction of particles with cells rather than an indirect interaction. Further studies are required to disclose the underlying mechanisms.

Molecular vibration spectroscopy study of irradiation effect in C-60 films induced by low energy ion

Irradiation effect in C-60 films induced by 170 keV B ion was investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies. The damage cross section sigma and the effective damage radius R are deduced from the experimental data of all four IR active modes and evident four Raman active modes of C-60 molecule. The differences on irradiation sensitivity and structural stability of the different active modes of C-60 molecule are compared. The results indicate that T-1u (4) of infrared active mode and A(g) (1) of Raman active mode are most sensitive for B ion irradiation. On the other hand T-1u (2) of infrared active mode and H-g (3) of Raman active mode are comparatively stable under B ion irradiation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3512968]

Performance comparison of low-temperature direct alcohol fuel cells with different anode catalysts

Low-temperature polymer electrolyte membrane fuel cells directly fed by methanol and ethanol were investigated employing carbon supported Pt, PtSn and PtRu as anode catalysts, respectively. Employing Pt/C as anode catalyst, both direct methanol fuel cell (DMFC) and direct ethanol fuel cell (DEFC) showed poor performances even in presence of high Pt loading on anode. It was found that the addition of Ru or Sn to the Pt dramatically enhances the electro-oxidation of both methanol and ethanol. It was also found that the single cell adopting PtRu/C as anode shows better DMFC performance, while PtSn/C catalyst shows better DEFC performance. The single fuel cell using PtSn/C as anode catalyst at 90degreesC shows similar power densities whenever fueled by methanol or ethanol. The cyclic voltammetry (CV) and single fuel cell tests indicated that PtRu is more suitable for DMFC while PtSn is more suitable for DEFC. (C) 2003 Elsevier B.V. All rights reserved.

Pt based anode catalysts for direct ethanol fuel cells

In the present work several Pt-based anode catalysts supported on carbon XC-72R were prepared with a novel method and characterized by means of XRD, TEM and XPS analysis. It was found that all these catalysts are consisted of uniform nanosized particles with sharp distribution and Pt lattice parameter decreases with the addition of Ru or Pd and increases with the addition of Sn or W. Cyclic voltammetry (CV) measurements and single direct ethanol fuel cell (DEFC) tests jointly showed that the presence of Sn, Ru and W enhances the activity of Pt towards ethanol electro-oxidation in the following order: Pt1Sn1/C > Pt1Ru1/C > Pt1W1/C > Pt1Pd1/C > Pt/C. Moreover, Pt1Ru1/C further modified by W and Mo showed improved ethanol electro-oxidation activity, but its DEFC performance was found to be inferior to that measured for Pt1Sn1/C. Under this respect, several PtSn/C catalysts with different Pt/Sn atomic ratio were also identically prepared and characterized and their direct ethanol fuel cell performances were evaluated. It was found that the single direct ethanol fuel cell having Pt1Sn1/C or Pt3Sn2/C or Pt2Sn1/C as anode catalyst showed better performances than those with Pt3Sn1/C or Pt4Sn1/C. It was also found that the latter two cells exhibited higher performances than the single cell using Pt1Ru1/C, which is exclusively used in PEMFC as anode catalyst for both methanol electro-oxidation and CO-tolerance. This distinct difference in DEFC performance between the catalysts examined here would be attributed to the so-called bifunctional mechanism and to the electronic interaction between Pt and additives. It is thought that an amount of -OHads, an amount of surface Pt active sites and the conductivity effect of PtSn/C catalysts would determine the activity of PtSn/C with different Pt/Sn ratios. At lower temperature values or at low current density regions where the electro-oxidation of ethanol is considered not so fast and its chemisorption is not the rate-determining step, the Pt3Sn2/C seems to be more suitable for the direct ethanol fuel cell. At 75 degreesC, the single ethanol fuel cell with Pt3Sn2/C as anode catalyst showed a comparable performance to that with Pt2Sn1/C, but at higher temperature of 90 degreesC, the latter presented much better performance. It is thought from a practical point of view that Pt2Sn1/C, supplying sufficient -OHads and having adequate active Pt sites and acceptable ohmic effect, could be the appropriate anode catalyst for DEFC. (C) 2003 Elsevier B.V. All rights reserved.