Long-wavelength Si-based MQW photodetectors for application in optical fiber communication

Si-based SiGe/Si strained MQW long-wavelength photodetectors (PD) with cycle type (Ring Shape) waveguide (CWG) and resonant-cavity-enhanced (RCE) structure have been investigated for the first time for improving the quantum efficiency and response time. The results show that the responsivities are higher than that of conventional PD with a same Ge content reported previously. In addition, RCE-PD has an obvious narrow band response with FWHM less than 6nm.

Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

Polarization switching current of vertical cavity surface-emitting Lasers in an applied electric field

The polarization of vertical-cavity surface-emitting laser (VCSEL) can be controlled by electro-optic birefringence. We calculated the birefringence resulted from external electric field which was imposed on the top DBR of VCSEL by assuming that the two polarization modes were in the same place of the gain spectra in the absence of electric field beginning. By modifying SFM, the affection of the electric field strength on the polarization switching currents between the two polarization modes had been shown.

Ti Schottky barrier diodes on n-type 6H-SiC

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.

A semiconductor laser suitably fabricated by planar technology

The semiconductor microlasers with an equilateral triangle resonator which can be fabricated by dry etching technique from the laser wafer of the edge emitting laser, are analyzed by FDTD technique and rate equations. The results show that ETR microlaser is suitable to realize single mode operation. By connecting an output waveguide to one of the vertices of the ETR, we still can get the confined modes with high quality factors. The EM microlasers are potential light sources for photonic integrated circuits.

Hybrid CMOS/VCSEL optoelectronic modules

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1x16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 Pin CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

Small signal equivalent circuit model of vertical cavity surface emitting lasers

Small signal equivalent circuit model of vertical cavity surface emitting lasers (VCSEL's) is given in this paper. The modulation properties of VCSEL are simulated using this model in Pspice program. The simulation results are good agree with experiment data. Experiment is performed to testify the circuit model.

Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

Deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular fiction epitaxy (MBE), Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that At doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction hand. 1)DLTFS results suggest that in addition to the rules of Te as a component of [lie alloy as well as isoelectronic centers, Te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, Te composition increases.

Analysis for the angle dependence of GaAs based RCE photodetectors

The theoretical analysis and experimental measurement on the angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40mn wavelength variation of peak quantum efficiency has been experimentally obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence have been characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum while especially applied in space optical detections and communications.

Design of side-pumped Nd : YAG lasers

Design of the typical laser diode side-pumped Nd:YAG rod system has been discussed using the conventional ray tracing method in this paper. Firstly introduce two basic matrices, refractional and translational matrix, described the transmission of nonparaxial light ray in the medium without concerning the absorption of light. And then, using those matrices, analyze the distribution of pump light in the crystal respectively under the condition of directly pumped system and indirectly pumped system with a cylindrical quartz rod as focusing lens. From the result of simulation, we compare the advantage and disadvantage of the two pumped method, and mainly consider how to select the diameter of the focus lens and cooling tube, indicate the effect of deionized water and cooling tube have on the pump light distribution in the active material. At last, make some conclusions about the side-pumped Nd:YAG laser system.

Stress analysis of silica-based arrayed waveguide grating by a finite element method

The stress distribution in silica optical waveguides on silicon is calculated by using finite element method (FEM). The waveguides are mainly subjected to compressive stress along the x direction and the z direction, and it is accumulated near the interfaces between the core and cladding layers. The shift of central wavelength of silica arrayed waveguide grating (AWG) on silicon-substrate with the designed wavelength and the polarization dependence are caused by the stress in the silica waveguides.

a dynamic model to handle defect-oriented processes

Tongji Univ, Inst Dev Study, Syst Engn Soc China, Comm Syst Dynam, Syst Dynam Soc, China Chapter, Shanghai Inst Foreign Trade, Syst Dynam Soc, Chapters Asia Pacific Area

Use of Ecosystem Flux Data and a Simulation Model to Examine Seasonal Drought Effects on a Subtropical Coniferous Forest

National Natural Science Foundation of China (NSFC) [30670384, 30590381]

大气季节内振荡对东亚夏季风活动的影响研究

利用ERA40逐日再分析资料、NCEP/NCAR2逐日再分析资料、中国740个测站日降水资料、上海台风研究所提供的西太平洋热带气旋资料、Kaplan等重建的月平均SSTA资料、NOAA逐日长波辐射（OLR）等资料，应用离散功率谱分析、带通滤波、EOF分析等统计方法，研究了东亚夏季风(EASM）的移动特征、东亚地区季节内振荡(ISO)的基本特征、季节内振荡对东亚夏季风活动的影响、季节内振荡对东亚夏季风异常活动的影响机理。主要结论如下： （1）综合动力和热力因素定义了可动态描述东亚夏季风移动和强度的指数，并利用该指数研究了东亚夏季风的爆发和移动的季节内变化及其年际和年代际变化特征。研究发现，气候平均东亚夏季风前沿分别在28候、33候、36候、38候、40候、44候出现了明显的跳跃。东亚夏季风活动具有显著的年际变率，主要由于季风前沿在某些区域异常停滞和突然跨越北跳或南撤引起，造成中国东部旱涝灾害频繁发生。东亚夏季风的活动具有明显的年代际变化，在1965年、1980年、1994年发生了突变，造成中国东部降水由“南旱北涝”向“南涝北旱”的转变。 （2）东亚季风区季节内变化具有10~25d和30~60d两个波段的季节内振荡周期，以30-60d为主。存在三个主要低频模态，第一模态主要表征了EASM在长江中下游和华北地区活动期间的低频形势；第二模态印度洋-菲律宾由低频气旋式环流控制，主要表现了ISO在EASM爆发期间的低频形势；第三模态主要出现在EASM在华南和淮河活动期间的低频形势。第一模态和第三模态是代表东亚夏季风活动异常的主要低频形势。 （3）热带和副热带地区ISO总是沿垂直切变风的垂直方向传播。因此，在南海-菲律宾东北风垂直切变和副热带西太平洋北风垂直切变下，大气热源激发菲律宾附近交替出现的低频气旋和低频反气旋不断向西北传播，副热带西太平洋ISO以向西传播为主。中高纬度地区，乌拉尔山附近ISO以向东、向南移动或局地振荡为主；北太平洋中部ISO在某些情况下向南、向西传播。 （4）季风爆发期，伴随着热带东印度洋到菲律宾一系列低频气旋和低频反气旋， 冷空气向南输送，10~25天和30~60天季节内振荡低频气旋同时传入南海加快了南海夏季风的爆发。在气候态下，ISO活动表现的欧亚- 太平洋（EAP）以及太平洋-北美（PNA）低频波列分布特征(本文提出的EAP和PNA低频波列与传统意义上的二维定点相关得到的波列不同)。这种低频分布形式使得欧亚和太平洋中高纬度的槽、脊及太平洋副热带高压稳定、加强，东亚地区的低频波列则成为热带和中高纬度ISO相互作用影响东亚夏季风活动的纽带。不同的阶段表现不同的低频模态，30~60d低频模态的转变加快了EASM推进过程中跳跃性；30-60d低频模态的维持使得EASM前沿相对停滞。 （5）30-60d滤波场，菲律宾海域交替出现的低频气旋和低频反气旋不断向西北传播到南海-西太平洋一带。当南海-西太平洋地区低频气旋活跃时，季风槽加强、东伸，季风槽内热带气旋（TC）频数增加；当南海-西太平洋低频反气旋活跃时，季风槽减弱、西退，TC处于间歇期，生成位置不集中。 （6）在El Nino态下，大气季节内振荡偏弱，北传特征不明显，但ISO由中高纬度北太平洋中部向南和副热带西太平洋向西的传播特征显著，东亚地区ISO活动以第三模态为主，EASM集中停滞在华南和淮河流域，常伴随着持续性区域暴雨的出现，易造成华南和江淮流域洪涝灾害，长江和华北持续干旱。在La Nina态下，大气季节内振荡活跃，且具有明显的向北传播特征，PNA低频波列显著，东亚地区ISO活动以第一模态单峰为主；EASM主要停滞在长江中下游和华北地区，这些地区出现异常持续强降水，华南和淮河流域多干旱；在El Nino态向La Nina态转换期，ISO活动以第一模态双峰为主，长江中下游常常出现二度梅。