Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows

AlInGaN quaternary epilayers have been grown with various TMGa flows by metalorganic chemical vapor deposition to investigate the influence of growth rate on the structural and optical properties. Triple-axis X-ray diffraction measurements show AlInGaN epilayers have good crystalline quality. Photolummescence (PL) measurements show that the emission intensity of AlInGaN epilayers is twenty times stronger than that of AlGaN epilayer with comparable Al content. V-shaped pits are observed at the surface of AlInGaN epilayers by atomic force microscopy (AFM) and transmission electron microscopy (TEM). High growth rate leads to increased density and size of V-shaped pits, but crystalline quality is not degraded. (C) 2003 Elsevier B.V. All rights reserved.

Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature

GaAs absorber was grown at low temperature (550degreesC) by metal organic chemical vapour deposition (MOCVD) and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3mus. The modelocking threshold is 4.27W and the highest average output pulse power is 290 mW. The modelocking frequency is 12 MHz.

Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well

Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors. (c) 2007 Elsevier Ltd. All rights reserved.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1-x strained layers

A constant amount of Ge was deposited on strained GexSi1-x layers of approximately the same thickness but with different alloy compositions, ranging from x = 0.06 to x = 0.19. From their atomic-force-microscopy images, we found that both the size and density of Ge islands increased with the Ge composition of the strained layer. By conservation of mass, this implies that these islands must incorporate material from the underlying strained layer. (C) 2000 American Institute of Physics. [S0003-6951(00)03529-4].

Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors

The traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors ( SET) has been considered three states (including an excited state) of the discrete quantum energy levels. The simulation results show negative differential conductance (NDC) characteristics in I-DS-V-DS curve. The SET-MOBILE utilizing NDC characteristics can successfully realize the basic logic functions as the RTD-MOBILE.

基于动态抢占阈值的实时调度

具有抢占阈值的调度算法集非抢占调度和纯抢占调度的特点 ,既减少了由于过多的随意抢占造成的CPU资源浪费 ,又保证了一定的任务截止期错失率及CPU资源利用率 已有的工作基本集中于讨论任务集完全给定 ,任务数、任务的优先级及任务的抢占阈值在调度前已完全确定 ,而且要求不同的任务具有不同的优先级 提出的具有抢占阈值的调度算法 ,完全放松了对这些条件的限制 ,即任务的个数不确定 ,任务的优先级及其抢占阈值在调度过程中可以动态地变化 最后以常用的LSF调度策略为例 ,结合动态的抢占阈值进行仿真 仿真结果表明 ,对于不确定的任务集、任务优先级和抢占阈值 ,利用具有抢占阈值的动态调度算法 ,降低了任务截止期错失率、提高了CPU的有效使用率

黄土丘陵区不同坡向及坡位草本群落生物量及多样性研究

以黄土丘陵区纸坊沟流域内的大范家沟阴阳坡和拐沟阴坡坡面主要草本群落为研究对象,分析不同坡向及坡位的草本群落盖度、地上生物量及物种多样性关系。结果表明,阴坡草本群落的物种20多种,较阳坡高30%。阴阳坡面上草本群落生物量和盖度从坡下至坡上逐渐减小。在水分和养分条件好的地段均有灌木入侵。阳坡Margalef和Menhinick丰富度指数均随坡位升高而降低;而阴坡Mafgalef指数随坡位升高而降低,Menhinick指数却随坡位升高而增大;3个均匀度指数和多样性指数在阴阳坡均随坡位的升高而减小。不同坡位引起的植被盖度、Margalef丰富度指数和Alatalo均匀度指数存在显著差异(P<0.05)。坡位与Margalef丰富度指数和Alatalo均匀度指数呈显著相关(P<0.05),与Shannon-wiener多样性指数呈极显著相关(P<0.01)。描述或评价群落多样性、丰富度及均匀度时,应多选几个指标参数,避免单一指标带来的片面性。掌握草本群落自身喜阴阳特性、生境特征、植被组成及多样性特征,充分认识植被演替条件和演替规律,对指导该区植被和生态系统恢复与重建具有重要意义。

黄土高原长期施用磷肥效应研究

以黄土高原长期定位试验为基础,研究施一定量氮肥(90 kg/hm2)的前提下,长期施用磷肥对黄土高原旱作冬小麦的肥料效应。结果表明,长期施用磷肥的农田施磷仍能显著提高小麦的产量,增产量达1393.75~2121.00kg/hm2,增产率为48.41%~73.67%,本试验中施磷39.6 kg/hm2时小麦产量达最大值5000 kg/hm2,这与小麦成穗数最大时的施肥量结果一致;产量与施磷量关系用回归方程Y=-0.8667X2+82.641X+3008.4(R2=0.92)拟合效果良好;施磷主要是通过影响小麦成穗数来影响小麦产量,而对穗粒数和千粒重的促进作用不明显;施磷还可促进小麦对氮磷钾养分的吸收利用,提高肥料的肥效和利用率;施磷过少不能满足作物需求,小麦产量较低,施磷过多小麦产量不会随施肥量的增加继续提高,反而有一定幅度的下降。