Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well
| Data(s) |
2007
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|---|---|
| Resumo |
Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors. (c) 2007 Elsevier Ltd. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhou, WZ (Zhou, W. Z.); Huang, ZM (Huang, Z. M.); Qiu, ZJ (Qiu, Z. J.); Lin, T (Lin, T.); Shang, LY (Shang, L. Y.); Li, DL (Li, D. L.); Gao, HL (Gao, H. L.); Cui, LJ (Cui, L. J.); Zeng, YP (Zeng, Y. P.); Guo, SL (Guo, S. L.); Gui, YS (Gui, Y. S.); Dai, N (Dai, N.); Chu, JH (Chu, J. H.) .Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well ,SOLID STATE COMMUNICATIONS,MAY 2007,142 (7):393-397 |
| Palavras-Chave | #半导体材料 #quantum wells |
| Tipo |
期刊论文 |
