Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

Epitaxial growth of SiC on complex substrates

Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.

Blue-shift photoluminescence from porous InAlAs

A porous InAlAs structure was first obtained by electrochemical etching. Nano-pore arrays were formed when the In0.52Al0.48As membrane was anodized at constant voltages in an HF aqueous solution. These self-assembled structures showed evident blue-shift photoluminescence emissions. While a quantum size effect alone underestimates the blue-shift energy for a sample with a relatively large average pore wall thickness, a novel effect caused by the asymmetric etching is proposed to account for this phenomenon. The results inferred from the x-ray double crystal diffraction are in good agreement with the experimental data.

Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.

Synthesis of mesoporous LaPO4 nanostructures with controllable morphologies

Lanthanum phosphate (LaPO4) nanostructures with different morphologies were prepared by a facile solution-precipitation process. The effect of different reaction conditions on the morphology of nanostructures was studied. When the molar ratio of La3+:H3PO4 was around 1 : 2, 1 : 20, 1 : 100, and 1 : 200, four different morphologies, such as near-spherical, snowflake-like, star-shaped, lens-like nanostructures and short nanorods, were obtained, respectively. Meanwhile, similar shapes developed when the molar ratio of H3PO4 to ionic surfactants, such as SDS and CTAB, was varied. In addition, Eu3+ doped and Ce3+/Tb3+ co-doped LaPO4 nanostructures showed morphology evolution similar to undoped LaPO4 nanostructures. The optical properties of these doped LaPO4 were also characterized.

Remarkable changes in the optical properties of CeO2 nanocrystals induced by lanthanide ions doping

Highly uniform and well-dispersed CeO2 and CeO2:Eu3+ (Sm3+, Tb3+) nanocrystals were prepared by a nonhydrolytic solution route and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectra (XPS), UV/vis absorption, and photoluminescence (PL) spectra, respectively. The result of XRD indicates that the CeO2 nanocrystals are well crystallized with a cubic structure. The TEM images illustrate that the average size of CeO2 nanocrystals is about 3.5 nm in diameter. The absorption spectrum of CeO2:Eu3+ nanocrystals exhibits red-shifting with respect to that of the undoped CeO2 nanocrystals. Under the excitation of 440 nm (or 426 nm) light, the colloidal solution of the undoped CeO2 nanocrystals shows a very weak emission band with a maximum at 501 nm, which is remarkably enhanced by doping additional lanthanide ions (Eu3+, Tb3+, Sm3+) in the CeO2 nanocrystals. The emission band is not due to the characteristic emission of the lanthanide ions but might arise from the oxygen vacancy which is introduced in the fluorite lattice of the CeO2 nanocrystals to compensate the effective negative charge associated with the trivalent ions.

The luminescence of CaYBO4 : RE3+ (RE=Eu, Gd, Tb, Ce) in VUV-visible region

Phosphors CaYBO4:RE3+ (RE = Eu, Gd, Tb, Ce) were synthesized with the method of solid-state reaction at high temperature, and their vacuum ultraviolet (VUV)-visible luminescent properties in VUV-visible region were studied at 20 K. In CaYBO4, it is confirmed that there are two types of lattice sites that can be substituted by rare-earth ions. The host excitation and emission peaks of undoped CaYBO4 are very weak, which locate at about 175 and 350-360nm, respectively. The existence of Gd3+ can efficiently enhance the utilization of host absorption energy and result in a strong emission line at 314 nm. In CaYBO4, Eu3+ has typical red emission with the strongest peak at 610 nm; Tb3+ shows characteristic green emission, of which the maximum emission peak is located at 542 nm. The charge transfer band of CaYBO4:Eu3+ was observed at 228 nm; the co-doping of Gd3+ and Eu3+ can obviously sensitize the red emission of Eu3+. The fluorescent spectra of CaYBO4:Ce3+ is very weak due to photoionization; the co-addition of Ce3+-Tb3+ can obviously quench the luminescence of Tb3+.

Improved efficiency by doping blue iridium (III) complex in europium complex-based light-emitting diodes

We demonstrated high-efficiency red organic light-emitting diodes (OLEDs) employing a europium complex, Eu (III) tris( thenoyltrifluoroacetone) 3,4,7,8-tetramethyl-1,10-phenanthroline (Eu(TTA)(3)(Tmphen)), as an emitter and a blue electrophosphorescent complex, Iridium ( III) bis[4,6-di-fluorophenyl-pyridinato-N,C-2] picolinate (FIrpic), as an assistant dopant codoped into 4,4-N, N-dicarbazole-biphenyl (CBP) host as an emissive layer. A pure red electroluminescence (EL) only from Eu3+ ions at 612 nm with a full width at half maximum of 3 nm was observed and the EL efficiency was significantly enhanced. The maximum EL efficiency reached 7.9 cd A(-1) at 0.01 mA cm(-2) current density, which is enhanced by 2.8 times compared with electrophosphorescence-undoped devices. The large improvements are attributed to energy transfer assistance effects of FIrpic, indicating a promising method for obtaining efficient red OLEDs based on rare-earth complexes.

Sol-gel-derived BPO4/Ba2+ as a new efficient and environmentally-friendly bluish-white luminescent material

In this paper, BPO4 and Ba2+-doped BPO4 powder samples were prepared by the sol-gel process using glycerol and poly(ethylene glycol) as additives. The structure and optical properties of the resulting samples were characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, field emission scanning electron microscopy (FESEM), diffuse reflection spectra, photoluminescence (PL) excitation and emission spectra, quantum yield, kinetic decay, and electron paramagnetic resonance (EPR), respectively. It was found that the undoped BPO4 showed a weak purple blue emission (409 nm, lifetime 6.4 ns) due to the carbon impurities involved in the host lattice. Doping Ba2+ into BPO4 resulted in oxygen-related defects as additional emission centers which enhanced the emission intensity greatly (> 10x) and shifted the emission to a longer-wavelength region (lambda(max) = 434 nm; chromaticity coordinates: x = 0.174, y = 0. 187) with a bluish-white color. The highest emission intensity was obtained ;when doping 6 mol % Ba2+ in BPO4, which has a quantum yield as high as 31%. The luminescent mechanisms of BPO4 and Ba2+-doped BPO4 were discussed in detail according to the existing models for silica-based materials.

Dy3+- and Eu3+-doped LaGaO3 nanocrystalline phosphors for field emission displays

Nanocyrstalline LaGaO3 and Dy3+- and Eu3+-doped LaGaO3 were prepared through a Pechini-type sol-gel process. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), photoluminescence, cathodoluminescence spectra, and lifetimes were utilized to characterize the samples. XRD reveals that the samples begin to crystallize at 900 degrees C and pure LaGaO3 phase can be obtained at 1000 degrees C. FE-SEM images indicate that the Dy3+- and Eu3+-doped LaGaO3 samples are both composed of aggregated spherical particles with sizes ranging from 40 to 80 nm. Under the excitation of ultraviolet light and low voltage electron beams (1-5 kV), the undoped LaGaO3 sample shows a strong blue emission peaking at 433 nm, and the Dy3+- and Eu3+-doped LaGaO3 samples show their characteristic emissions of Dy3+ (F-4(9/2)-H-6(15/2) and F-4(9/2)-H-6(13/2) transitions) and Eu3+ (D-5(0,1,2)-F-7(1,2,3,4) transitions), respectively. The relevant luminescence mechanisms are discussed.

Up-conversion spectrum properties of the oxy-fluoride glass co-doped with Er3+ and Yb3+

Up-conversion of 45PbF(2)-45GeO(2)-10WO(3) oxy-fluoride glasses co-doped with Yb3+ and Er3+ ions were prepared by fusion method through melting at 1223 K and then annealing at 653 K for 4 h. Transmittance of the undoped host glass was beyond 73% in a range of 0.6-2.5 mu m and the co-doped glasses still provided good transmittance beyond 50%. Refractive indices of the host and co-doped glasses were 1.517 and 1.650, respectively. Blue, green and red fluorescence spectra were observed in a range of 400-700 nm under 980 nm diode laser excitation. Up-conversion spectra at about 410, 518, 530and 650 nm were assigned to the 4f electron transitions of H-2(9/2) -> I-4(15)/(2), H-2(15/2) -> I-4(15/2) S-4(3/2) -> I-4(15/2) and F-4(9/2) -> I-4(15/2) of Er3+ ion, respectively. The mechanism of energy transfer between Yb3+ and Er3+ ions in the glass was analyzed. Raman shift shows the non-radiative relaxation of the glass sample is low.

Phenanthroline-functionalized MCM-41 doped with europium ions

Organo-functionalized MCM-41 containing non-covalently linked 1,10-phenanthroline (denoted as Phen-MCM-41) was synthesized by template-directed co-condensation of tetraethoxysilane and the modified phenanthroline (denoted as Phen-Si). XRD, FTIR, UV/VIS spectroscopy as well as luminescence spectroscopy were employed to characterize Phen-MCM-41. No disintegration or loss of the Phen-Si during the solvent extraction procedure could be observed. When monitored by the ligand absorption wavelength (272 nm), the undoped MCM-41 produces a broad band emission centered at 450 run, whereas europium (III) doped Phen-MCM-41 displays the emission of the Eu3+, i.e., D-5(0) --> F-7(J) (J = 0, 1, 2, 3, 4) transition lines due to the energy transfer from the ligands to Eu3+ as well as a broad band emission centered at 442 nm.

Multilayer assemblies of colloidal ZnS doped with silver and polyelectrolytes based on electrostatic interaction

Multilayer assemblies of silver doped ZnS colloid and polycation were fabricated by a self-assembly technique exploiting electrostatic interaction. UV/Vis spectra showed the uniform deposition process and X-ray photoemission spectroscopy (XPS) confirmed the coexistence of silver. It was found that the emission spectra of the silver doped ZnS colloid red-shifted to 528 nm comparing with undoped ZnS colloid. However, the most important finding was that the luminescence intensity of doped ZnS assembled in films was much stronger than that of undoped ZnS in films and that of doped ZnS in the spin-casting film. The mechanism of the enhancement luminescence was discussed. (C) 1998 Elsevier Science S.A. All rights reserved.