Blue-shift photoluminescence from porous InAlAs


Autoria(s): Jiang YC (Jiang Y. C.); Liu FQ (Liu F. Q.); Wang LJ (Wang L. J.); Yin W (Yin W.); Wang ZG (Wang Z. G.)
Data(s)

2010

Resumo

A porous InAlAs structure was first obtained by electrochemical etching. Nano-pore arrays were formed when the In0.52Al0.48As membrane was anodized at constant voltages in an HF aqueous solution. These self-assembled structures showed evident blue-shift photoluminescence emissions. While a quantum size effect alone underestimates the blue-shift energy for a sample with a relatively large average pore wall thickness, a novel effect caused by the asymmetric etching is proposed to account for this phenomenon. The results inferred from the x-ray double crystal diffraction are in good agreement with the experimental data.

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This work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, respectively). The authors would like to thank X L Zhou for useful discussion and an anonymous reviewer of Journal of Applied Physics for helpful suggestions.

其它

This work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, respectively). The authors would like to thank X L Zhou for useful discussion and an anonymous reviewer of Journal of Applied Physics for helpful suggestions.

Identificador

http://ir.semi.ac.cn/handle/172111/20680

http://www.irgrid.ac.cn/handle/1471x/105311

Idioma(s)

英语

Fonte

Jiang YC (Jiang Y. C.), Liu FQ (Liu F. Q.), Wang LJ (Wang L. J.), Yin W (Yin W.), Wang ZG (Wang Z. G.).Blue-shift photoluminescence from porous InAlAs.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2010,25(11):Art. No. 115006

Palavras-Chave #半导体材料 #MACROPOROUS SILICON #PORE FORMATION #GAP #INP #AL0.48IN0.52AS #NANOSTRUCTURES #MORPHOLOGY
Tipo

期刊论文