Anti HIV-1 agents 5: Synthesis and anti-HIV-1 activity of some N-arylsulfonyl-3-acetylindoles in vitro

In continuation of our program aimed at the discovery and development of compounds with superior anti-human immunodeficiency virus type 1 (HIV-1) activity, 21N-arylsulfonyl-3-acetylindole analogs (2a-u) were synthesized and preliminarily evaluated as HIV-1 inhibitors in vitro. Among of all the analogs, several compounds exhibited significant anti-HIV-1 activity, especially N-phenylsulfonyl-3-acetyl-6-methylindole (2j) and N-(p-ethyl)phenylsulfonyl-3-acetyl-6-methylindole (2n) showed the most potent anti-HIV-1 activity with EC50 values of 0.36 and 0.13 mu g/mL, and TI values of >555.55 and 791.85, respectively. It demonstrated that introduction of the acetyl group at the 3-position of N-arylsulfonyl-6-methylindoles could generally lead to the more potent analogs. (C) 2010 Elsevier Ltd. All rights reserved.

Si基量子阱材料1.3微米波长光电探测器的研究

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1.3μm In1-x Gax Asx P1-y/InP 应变MQW激光器及偏振补偿的源介质的研究

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长波长（1.3-1.55μm）自组织InGaAs/GaAs量子点的分子束外延生长

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1.3 µm GaAs 基InAs 量子点材料生长及器件应用

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1.3 m GaInNAs 量子阱激光器器件物理基础研究

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1.3 微米长波长InAs/GaAs 自组织量子点的分子束外延生长与激光器

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1.3-1.55 m GaInNAs 多量子阱共振腔增强型探测器

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1.3 µm GaAs 基量子阱、量子点垂直腔面发射激光器

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1.3 微米长波长InAs/GaAs自组织量子点材料及激光器研究

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GaAs 基1.3-1.55μm GaInNAs(Sb)量子阱及激光器、探测器的分子束外延生长

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1.3-1.55 微米 GaInNAs(Sb)/GaAs 量子阱生长与激光器制备研究

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1.3微米InGaAs/GaAs自组织量子点激光器材料及生长该材料的方法

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无铝1.3μm铟砷/镓砷量子点激光器

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1.3微米高密度量子点结构及其制备方法

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