1.3微米InGaAs/GaAs自组织量子点激光器材料及生长该材料的方法
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02/10/2002
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:38Z (GMT). No. of bitstreams: 1 full/01104430.pdf: 821822 bytes, checksum: 983ce31ea8f51906e4a5cc7aa1d68d1f (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
牛智川;封松林;杨富华;王晓东;汪辉;李树英;苗振华;李树深,1.3微米InGaAs/GaAs自组织量子点激光器材料及生长该材料的方法 ,CN01104430.6,20010226 |
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专利 |
