Separation of phenothiazines in aqueous and non-aqueous capillary electrophoresis

Four phenothiazines, promethazine, dioxypromethazine, chlorpromazine, and trifluoperazine have been separated by capillary electrophoresis using N, N, -dimethylformamide (DMF) as separation medium with UV absorbance detection. High voltage and concentrated buffer were used with small current and low electroosmosis. Good resolution and high column efficiency were obtained. Separation selectivity in DMI; was different from that in water because of the different solvation interactions. The influence of buffer composition on separation selectivities and electroosmosis were also studied.

Combination of amperometric detector & UV detector for capillary electrophoresis

A new electrochemical cell assembly with the combination of UV and amperometric detector (AD) based on their complementarity was described. A Nafion tubing junction was used to decouple the high voltage from the separation capillary in the rear of on-column UV detector. In this mode, the electroactive and inert compounds could be detected by UV and AD at the same time. Aromatic amines were determined with the UV and the end-column AD detection to evaluate the performances of the cell assembly. Such an improved electrochemical detector could match the capillary with different diameters. By simple adjustment of the screws, the positioning of the working electrode and the detection capillary was easily gained without microscope. It is also very easy to assemble and disassemble the working electrode when needed. (C) 1999 Elsevier Science B.V. All rights reserved.

Separation of phenothiazines using aqueous and nonaqueous capillary electrophoresis

Separations of phenothiazines, promethazine(PZ), dioxypromethazine (OZ), chlorpromazine(CZ), trifluoperazine(TfZ) and thioridazine(TZ) by capillary electrophoresis in water and FA media were carried out and compared. Thus different selectivity and resolution were observed as media varying from water to FA. Migration order was PZ, OZ, CZ and TZ in water but (TZ+PZ), CZ and OZ in FA, when the same buffer, 25 mmol/L Tris and 25 mmol/L citric acid, was used. It also has been observed that pH has great effect on selectivity both in water and FA and a possible explanation was given. Separation efficiency was higher in FA media than in water because of the permission of high voltage applied. For all separations in FA 30 kV was applied, and when 25 mmol/L Tris was used as buffer, current was only 20 mu A and complete separation of TZ, CZ, PZ and OZ was achieved with effencicy higher than 3.5 x 10(5) theoretical plates for all analytes. The high performance of capillary electrophoresis in FA suggests that FA is an excellent media separation.

输电线巡检机器人越障机理与试验

分析超高压输电线路架空地线上的障碍物类型以及跨越这些障碍的过程。可以发现,巡检机器人采用双臂交替跨越障碍,越障过程简单。但是由于受巡检机器人自身重力偏矩的影响和手臂长度尺寸的限制,当单臂悬架在架空地线上时,导致巡检机器人本体倾斜,另一手臂完成脱线和上线任务变得十分困难,有时甚至造成越障失败。为了解决上述问题,提出质量调节的控制方法。该方法通过调节巡检机器人的质心,使巡检机器人的本体保持水平状态。为了验证质量调节控制方法的正确性,采用Lagrange方法建立巡检机器人动力学模型,通过仿真试验、实验室模拟实际架空地线试验以及超高压实际现场试验说明了提出方法的可行性。

一种改进的超高压输电线路巡检机器人越障方法

介绍了一种新型的超高压输电线路巡检机器人,阐述了分阶段的控制策略.主要针对越障的工程实际问题,从理论上分析了越障阶段的难点:质心调节,输电线的辨识与定位问题.进行了仿真和试验,验证了控制策略和理论分析的正确性.

一种自主越障巡检机器人行走夹持机构

在机器人越障过程中,由于重力的影响使得机器人车体水平姿态发生变化,从而机器人自主越障变得十分困难。分析了超高压输电线路障碍物的类型,提出了一种新的双臂自主越障巡检机器人构型,该构型能够跨越输电线路上的障碍物。针对这种新构型,阐述了机器人行走夹持机构的工作原理和实现形式,着重分析研究了偏心夹持机构对保持车体水平姿态的机理。最后,通过越障实验验证了行走夹持机构的可行性。

超高压线巡检机器人移动越障机构综述

介绍了国内外超高压输电线路巡检机器人的研究现状,分析了几种典型的巡检机器人传动原理、机械结构的特点,详细探讨了巡检机器人移动、越障的运动机理和机构形式。最后总结了巡检机器人移动越障机构的难点,展望了巡检机器人的发展趋势。

超高压输电线路巡检机器人越障控制问题的研究

给出了一种超高压输电线路巡检机器人控制系统的设计与实现方法.根据机器人的作业任务,提出了基于传感器信息、约束信息以及动作反馈信息作为输入,产生式系统作为动作输出的越障控制方式.仿真结果表明此方法对于机器人的越障过程是有效的.

Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off.

Arc Voltage Fluctuation in DC Laminar and Turbulent Plasma Jets Generat Ion

Arc voltage fluctuations in a direct current (DC) non-transferred arc plasma generator are experimentally studied, in generating a jet in the laminar, transitional and turbulent regimes. The study is with a view toward elucidating the mechanism of the fluctuations and their relationship with the generating parameters, arc root movement and flow regimes. Results indicate that the existence of a 300 Hz alternating current (AC) component in the power supply ripples does not cause the transition of the laminar plasma jet into a turbulent state. There exists a high frequency fluctuation at 4 kHz in the turbulent jet regime. It may be related to the rapid movement of the anode attachment point of the arc.

Fluctuation characteristics of arc voltage and jet flow in a non-transferred dc plasma generated at reduced pressure

A torch with a set of inter-electrode inserts between the cathode and the anode/nozzle with a wide nozzle exit was designed to generate plasma jets at chamber pressures of 500–10 000 Pa. The variation of the arc voltage was examined with the change in working parameters such as gas flow rate and chamber pressure. The fluctuation in the arc voltage was recorded with an oscilloscope, and the plasma jet fluctuation near the torch exit was observed with a high-speed video camera and detected with a double-electrostatic probe. Results show that the 300 Hz wave originated from the tri-phase rectified power supply was always detected under all generating conditions. Helmholtz oscillations over 3000 Hz was detected superposed on the 300 Hz wave at gas flow rates higher than 8.8 slm with a peak to valley amplitude lower than 5% of the average voltage value. No appreciable voltage fluctuation caused by the irregular arc root movement is detected, and mechanisms for the arc voltage and jet flow fluctuations are discussed.

A Q-swicthed all-solid-state single-longitudinal-mode laser with adjustable pulse-width and high repetition rate

A single-longitudinal-mode (SLM) laser-diode pumped Nd: YAG laser with adjustable pulse width is developed by using the techniques of pre-lasing and changing polarization of birefingent crystal. The Q-switching voltage is triggered by the peak of the pre-lasing pulse to achieve the higher stability of output pulse energy. The output energy of more than 1 mJ is obtained with output energy stability of 3% (rms) at 100 Hz. The pulse-width can be adjusted from 30 ns to 300 ns by changing the Q-switching voltage. The probability of putting out single-longitudinal-mode pulses is almost 100%. The laser can be run over four hours continually without mode hopping.

A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology

National Natural Science Foundation of China 60536030 60776024 60877035 90820002 National High-Technology Research and Development Program of China 2007AA04Z329 2007AA04Z254

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.