A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator

A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating asimple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic "and" function with differ-ent load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinc-tion ratio of over 7dB with a 950Ω load resistor and a 7mW control light power at 622Mbit/s.

Monolithically Integrated Optoelectronic Receivers Implemented in 0. 25μm MS/RF CMOS

A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

High Speed VCSEL-Based Parallel Optical Transmission Modules

Design and fabrication of a parallel optical transmitter are reported. The optimized 12 channel parallel optical transmitter,with each channel＇s data rate up to 3Gbit/s,is designed, assembled, and measured. A top-emitting 850nm vertical cavity surface emitting laser（VCSEL） array is adopted as the light source,and the VCSEL chip is directly wire bonded to a 12 channel driver IC. The outputs of the VCSEL array are directly butt coupled into a 12 channel fiber array. Small form factor pluggable （SFP） packaging technology is used in the module to support hot pluggable in application. The performance results of the module are demonstrated. At an operating current of 8mA, an eye diagram at 3Gbit/s is achieved with an optical output of more than 1mW.

Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors

A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.

Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels

The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 mu m silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4x4 optoelectronic crossbar structure consisting of hybrid CMOS-SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

Structural features of the L-argininamide-binding DNA aptamer studied with ESI-FTMS

The 24-mer DNA aptamer of Harada and Frankel ( Harada, K.; Frankel, A. D. EMBO J. 1995, 14, 5798-5811) that binds L-argininamide (L-Arm) was studied by electrospray ionization Fourier transform mass spectrometry (ESI-FTMS). This DNA folds into a stem and loop such that the loop is able to engulf L-Arm. As controls, two derivatives of the same base composition, one with the same stem but a scrambled loop and the other with no ability to form a secondary structure, were studied. The two DNAs that could fold into stem-loop structures showed a more negatively charged distribution of ions than the linear control. This tendency was preserved in the presence of ligand; complexes expected to have more secondary structure had ions with more negative charges. Distinct species corresponding to no, one, and two bound L-Arm molecules were observed for each DNA. The fractional peak intensities were fit to a straightforward binding model and binding constants were obtained. Thus, ESI-FTMS can provide both qualitative and quantitative data regarding the structure of DNA and its interactions with noncovalent ligands.

卷烟条盒包装质量检测机器视觉系统设计

为了避免人眼对产品外观质量检测时,人眼视觉疲劳所产生的产品错检、漏检,提出了基于机器视觉的烟支条盒包装质量检测系统的设计。该系统由光源、相机、图像采集卡和工业控制计算机组成视觉系统处理单元,应用定位配准、边缘检测和斑点分析等图像处理算法完成对产品缺陷的检测。该视觉检测系统已经在烟厂得到了实际应用,对今后开发类似的基于机器视觉的产品外观质量检测系统具有一定的参考价值和指导意义。