K+-Na+离子交换玻璃波导及LiNbO3热光器件研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

磁性半导体GdxSi1-x和高k材料Gd2O3的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

新型高K 栅介质材料的制备和性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

一种制备三元高K栅介质材料的方法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Development of high-k gate dielectric materials

The traditional gate dielectric material Of SiO2 can not satisfy the need of the continuous downscaling of CMOS dimensions. High-K gate dielectric materials have attracted extensive research efforts recently and obtained great progress. In this paper, the developments of high-K gate materials were reviewed. Based on the author's background and research work in the area, the latest achievements of high-K gate dielectric materials on the recrystalization temperature, the low-K interface layer, and the dielectric breakdown and metal gate electrode were introduced in detail.

Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation

The interface dipole and its role in the effective work function (EWF) modulation by Al incorporation are investigated. Our study shows that the interface dipole located at the high-k/SiO2 interface causes an electrostatic potential difference across the metal/high-k interface, which significantly shifts the band alignment between the metal and high-k, consequently modulating the EWF. The electrochemical potential equalization and electrostatic potential methods are used to evaluate the interface dipole and its contribution. The calculated EWF modulation agrees with experimental data and can provide insight to the control of EWF in future pMOS technology.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation

The adsorption of K on the n-GaAs(I 0 0) surface was investigated by X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission spectroscopy (SR-PES). The Ga3d and As3d core level was measured for clean and K adsorbed GaAs(I 0 0) surface. The adsorption of K induced chemical reaction between K and As, and the K-As reactant formed when the K coverage theta > I ML. The chemical reaction between K and Ga did not occur, but Ga atoms were exchanged by K atoms. From the data of band bending, the Schottky barrier is 0.70 eV. The Fermi-level pinning was not caused by defect levels. The probable reason is that the dangling bonds of surface Ga atoms were filled by the outer-shell electrons of K atoms, forming a half-filled surface state. The Fermi-level pinning was caused by this half-filled surface state. (c) 2004 Elsevier B.V. All rights reserved.

Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1-xNx nanowires: Ten-band k center dot p model

The electronic structures of InSb1-xNx nanowires are investigated using the ten-band k center dot p method. It is found that nitrogen increases the Rashba coefficient of the nanowires dramatically. For thick nanowires, the Rashba coefficient may increase by more than 20 times. The semiconductor-metal transition occurs more easily in InSb1-xNx nanowires than in InSb nanowires. The electronic structure of InSb1-xNx nanowires is very different from that of the bulk material. For fixed x the bulk material is a semimetal, while the nanowires are metal-like. In InSb1-xNx bulk material and thick nanowires, an interesting decrease of electron effective mass is observed near k=0 which is induced by the nitrogen, but this phenomenon disappears in thin nanowires.

Origin and elimination of spurious solutions of the eight-band k center dot p theory

The origin of spurious solutions in the eight-band envelope function model is examined and it is shown that spurious solutions arise from the additional spurious degeneracies caused by the unphysical bowing of the conduction bands calculated within the eight-band k center dot p model. We propose two approaches to eliminate these spurious solutions. Using the first approach, the wave vector cutoff method, we demonstrate the origin and elimination of spurious solutions in a transparent way without modifying the original Hamiltonian. Through the second approach, we introduce some freedom in modifying the Hamiltonian. The comparison between the results from the various modified Hamiltonians suggests that the wave vector cutoff method can give accurate enough description to the final results.

一种优化初始中心点的K平均文本聚类算法

文本聚类在信息过滤,网页分类中有着很好的应用。但它面临数据量大,特征维度高的难点。由于K平均算法易于实现,对数据依赖度底,在文本聚类中得到应用。然而,传统K平均以及它的变种会产生有较大波动的聚类结果。因此对K平均算法进行了改进,通过优化聚类初始中心的选择,得到一种适合对文本数据聚类分析的改进算法。大量实验显示,该算法可以生成质量较高而且聚类质量波动性较小的结果。

Experimental study on K alpha X-ray emission from intense femtosecond laser-solid interactions

The characteristics of K alpha X-ray sources generated by p-polarized femtosecond laser-solid interactions are experimentally studied in the relativistic regime. By use of knife-edge image technique and a single-photon-counting X-ray CCD camera, we obtaine the source size, the spectrum and the conversion efficiency of the Ka X-ray sources. The experimental results show that the conversion efficiency of Ka photons reaches an optimum value of 7.08 x 10(-6)/sr at the laser intensity of 1.6 x 10(18) W/cm(2), which is different from the Reich's simulation results (Reich et al., 2000 Phys. Rev. Lett. 84 4846). We find that about 10% of laser energy is converted into the forward hot electrons at the laser intensity of 1.6 x 10(18) W/cm(2).

新型绿色荧光体ABLa(PO_4)_2:Ce, Tb研究(A = K, Na; B = Mg, Zn)

本工作完成了磷酸盐化合物ABLa(PO_4)_2的合成，这些磷盐均可在900 ℃左右合成；对其进行了结构测试与表征，发现这些磷酸盐属于单斜晶系独居石结构，与LaPO_4同构，具有很相近的晶胞参数；系统地研究了RE~(3+)离子(RE = Ce,Tb,Dy)在ABLa(PO_4)_2基质中的发光与能量传递规律，研究了Ce~(3+)、Tb~(3+)离子发光中心与基质晶格之间的相互作用，计算了这些稀土离子之间能量传递的临界距离Rc(dd)，结果表明ABLa(PO_4)_2基质中Ce~(3+)离子与基质晶格之间的相互作用属于中等程度耦合，Tb~(3+)离子与基质晶格之间的相互作用属于无辐射多声子过程，Ce~(3+)→Ce~(3+)、Ce~(3+)→Tb~(3+)能量迁移临界距离均与LaPO_4中相近，Ce~(3+) → Ce~(3+)相对于Ce~(3+) → Tb~(3+)属于快过程，Ce~(3+) → Ce~(3+)能量传递对ABLa(PO_4)_2:Ce,Tb荧光体的Tb~(3+)绿色发光起了重要的作用，ABLa(PO_4)_2基质是Ce~(3+)，Ce~(3+)-Tb~(3+)，Ce~(3+)-Dy~(3+)的优良发光基质；最后探讨了绿色荧光体ABLa(PO_4)_2:Ce，Tb的调制途径，主要研究了Ce~(3+)、Tb~(3+)离子的浓度效应，掺杂B_2O_3、Dy~(3+)、SiO_2对荧光体发光的影响及NH_4Cl的作用，结果表明Ce~(3+)、Tb~(3+)离子的适宜浓度分别为0.2～0.5和0.08～0.2，掺杂适量的B_2O_3、Dy~(3+)能很好地提高荧光体的发光，掺杂SiO_2、NH_4Cl不利荧光体发光。

模式识别研究含氮环状化合物的结构与改变性相关

本文设计了一个计算机模式识别系统，并对含氮环状化合的结构与改变性相关进行了研究。目的在于用模式识别寻找规律，予测未知。从含氮环状化合物中，我们选出了有代表性的88个化合物作为研究对象。其中56个有致变性，另外32个无致变性。在结构信息的输入及转化的基础上，我们提取了零阶项到四阶项的分子联接性指数9个特征及10个分子拓扑特征。经特征的选择和予处理之后，我们用K－最近邻法、逐步判别和线性判别三种分类法对这些化合物进行分类。以数据集的四分之三作为训练集，另四分之一作予测集，识别能力可达90％以上，予测率也达80％以上。研究结果不仅得到了从一定角度反映含氮环状化合物的结构与致变性相关的模型，理想的分类、予测也表明模式识别技术在此领域研究的切实可行，也为其它领域的研究提供了可借鉴的研究方法。本系统由10个独立程序模块构成，所有程序用FORTRAN语言写成，在POP－11－24机上调试运行。

ELECTRONIC-STRUCTURES OF THE ALKALI-CONTAINING BUCKMINSTERFULLERENES (A-DELTA-C60) (A=LI,NA,K,RB,CS) AND THE HALOGEN-CONTAINING BUCKMINSTERFULLERENES (H-DELTA-C60) (H=F,CL,BR,I)

The geometrical parameters and electronic structures of C60, (A partial derivative C60) (A = Li, Na, K, Rb, Cs) and (H partial derivative C60) (H = F, Cl, Br, I) have been calculated by the EHMO/ASED (atom superposition and electron delocalization) method. When putting a central atom into the C60 cage, the frontier and subfrontier orbitals of (A partial derivative C60) (A = Li, Na, K, Rb, Cs) and (H partial derivative C60) (H = F, Cl) relative to those of C60 undergo little change and thus, from the viewpoint of charge transfer, A (A = Li, Na, K, Rb, Cs) and H (H = F, Cl) are simply electron donors and acceptors for the C60 cage resPeCtively. Br is an electron acceptor but it does influence the frontier and subfrontier MOs for the C60 cage, and although there is no charge transfer between I and the C60 cage, the frontier and subfrontier MOs for the C60 cage are obviously influenced by I. The stabilities DELTAE(X) (DELTAE(X) = (E(X) + E(C60)) - E(x partial derivative C60)) follow the sequence I < Br < None < Cl < F < Li < Na < K < Rb < Cs while the cage radii r follow the inverse sequence. The stability order and the cage radii order have been explained by means of the (exp-6-1) potential.