Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation


Autoria(s): Sun, MH; Zhao, TX; Jia, CY; Xu, PS; Lu, ED; Hsu, CC; Ji, H
Data(s)

2005

Resumo

The adsorption of K on the n-GaAs(I 0 0) surface was investigated by X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission spectroscopy (SR-PES). The Ga3d and As3d core level was measured for clean and K adsorbed GaAs(I 0 0) surface. The adsorption of K induced chemical reaction between K and As, and the K-As reactant formed when the K coverage theta > I ML. The chemical reaction between K and Ga did not occur, but Ga atoms were exchanged by K atoms. From the data of band bending, the Schottky barrier is 0.70 eV. The Fermi-level pinning was not caused by defect levels. The probable reason is that the dangling bonds of surface Ga atoms were filled by the outer-shell electrons of K atoms, forming a half-filled surface state. The Fermi-level pinning was caused by this half-filled surface state. (c) 2004 Elsevier B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/8634

http://www.irgrid.ac.cn/handle/1471x/63847

Idioma(s)

英语

Fonte

Sun, MH; Zhao, TX; Jia, CY; Xu, PS; Lu, ED; Hsu, CC; Ji, H .Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation ,APPLIED SURFACE SCIENCE,AUG 15 2005,249 (1-4):340-345

Palavras-Chave #半导体物理 #X-ray photoelectron spectroscopy
Tipo

期刊论文