A Novel Architecture of Vision Chip for Fast Traffic Lane Detection and FPGA Implementation

This paper presents a novel architecture of vision chip for fast traffic lane detection (FTLD). The architecture consists of a 32*32 SIMD processing element (PE) array processor and a dual-core RISC processor. The PE array processor performs low-level pixel-parallel image processing at high speed and outputs image features for high-level image processing without I/O bottleneck. The dual-core processor carries out high-level image processing. A parallel fast lane detection algorithm for this architecture is developed. The FPGA system with a CMOS image sensor is used to implement the architecture. Experiment results show that the system can perform the fast traffic lane detection at 50fps rate. It is much faster than previous works and has good robustness that can operate in various intensity of light. The novel architecture of vision chip is able to meet the demand of real-time lane departure warning system.

The methane hydrate formation and the resource estimate resulting from free gas migration in seeping seafloor hydrate stability zone

It is a typical multiphase flow process for hydrate formation in seeping seafloor sediments. Free gas can not only be present but also take part in formation of hydrate. The volume fraction of free gas in local pore of hydrate stable zone (HSZ) influences the formation of hydrate in seeping seafloor area, and methane flux determines the abundance and resource of hydrate-bearing reservoirs. In this paper, a multiphase flow model including water (dissolved methane and salt)-free gas hydrate has been established to describe this kind of flow-transfer-reaction process where there exists a large scale of free gas migration and transform in seafloor pore. In the order of three different scenarios, the conversions among permeability, capillary pressure, phase saturations and salinity along with the formation of hydrate have been deducted. Furthermore, the influence of four sorts of free gas saturations and three classes of methane fluxes on hydrate formation and the resource has also been analyzed and compared. Based on the rules drawn from the simulation, and combined information gotten from drills in field, the methane hydrate(MH) formation in Shenhu area of South China Sea has been forecasted. It has been speculated that there may breed a moderate methane flux below this seafloor HSZ. If the flux is about 0.5 kg m-2 a-1, then it will go on to evolve about 2700 ka until the hydrate saturation in pore will arrive its peak (about 75%). Approximately 1.47 109 m3 MH has been reckoned in this marine basin finally, is about 13 times over preliminary estimate.

Design and Operation of A 5.5 MWe Biomass Integrated Gasification Combined Cycle Demonstration Plant

The design and operation of a 5.5 MWe biomass integrated gasification combined cycle (IGCC) demonstration plant, which is located in Xinghua, Jiangsu Province of China, are introduced. It is the largest complete biomass gasification power plant that uses rice husk and other agricultural wastes as fuel in Asia. It mainly consists of a 20 MWt atmospheric circulating fluidized-bed gasifier, a gas-purifying system, 10 sets of 450 kW(e) gas engines, a waste heat boiler, a 1.5 MWe steam turbine, a wastewater treatment system, etc. The demonstration plant has been operating since the end of 2005, and its overall efficiency reaches 26-28%. Its capital cost is less than 1200 USD/kW, and its running cost is about 0.079 USD/kWh based on the biomass price of 35.7 USD/ton. There is a 20% increment on capital cost and 35% decrease on the fuel consumption compared to that of a 1 MW system without a combined cycle. Because only part of the project has been performed, many of the tests still remain and, accordingly, must be reported at a later opportunity.

CaS:M (M=Ce~(3+), Dy~(3+), Eu~(2+), Cu)和Cas:Ce~(3+), M (M=Dy~(3+), Cu)的合成及其光致发光和热释发光性质研究

本文研究了Ce~(3+), Dy~(3+), Eu~(3+), Cu离子以及它们的共掺杂在硫化钙基质中的光致发光和热释发光性质，并用顺磁共振方法研究了磷光体中缺陷的性质及其对磷光体光致发光的影响。在CaS:Ce~(3＋)磷光体的稳定性影响因素，并经包膜后稳定性有所提高。计算了新的热释发光峰的陷阱参数。确定了热释发光的动力学级数。在Cas: Dy~(3+)磷光体中，研究了合成条件对磷光体发光性质的影响，讨论了新的热释发光峰的陷阱参数，确定了热释发光的动力学级数。在CaS:Dy~(3+)磷光体中，发现基质对Dy~(3+)离子具有敏化作用，讨论了黄兰比随Dy~(3+)离子浓度变化出现最大值的原因。计算了热释发光峰的陷阱参数，确定了热释发光的动力学级数。在CaS:Ce~(3+)，Dy~(3+)磷光体中，研究了Ce~(3+)离子的发光随Dy~(3+)离子浓度的变化，可能具有Dy~(3+) → Ce~(3+)的能量传递。计算了热释发光峰的陷阱参数，确定了热释发光的动力学级数。在CaS:Cu磷光体中，确定了不同Cu~+离子格位所产生的发射峰。根据磷光体中缺陷的转化过程解释了光致发光和热释发光性质随Cu离子浓度增加所呈现的规律性变化。通过实验证明磷光体有可能用作紫外剂量材料。本文还首次研究了CaS:Cu磷光体在UV（3bb nm)辐照下，发生Cu~+→Cu~(2+)的光氧化反应，通过EPR实验证明在Cu'_(Ca)→Cu_i~+处发生光氧化反应。在CaS:Ce~(3+),Cu磷光体中，观察到了Cu离子对Ce~(3+)离子的能量传递现象。在CaS:Eu~(2+)光体中，发光强度随Eu~(2+)离子浓度变化，显示浓度猝灭特性。本文还研究了CaS:Ce~(3+), CaS:Dy~(3+), CaS:Cu以及CaS:Ce~(3+), Cu磷光体中缺陷的性质，在CaS:Ce~(3+)中存在V_S~(2+)空位，并根据这一空位的性质，解释了发光光谱，并且选择适当的助熔剂使发光效率提高。在CaS:Dy~(3+)磷光体中，存在V_S~(2+)-V_(Ca)~(2-)空位对；在CaS:Cu和CaS:Ce~(3+), Cu磷光体中，存在V_S~(2+)空位和Cu'_(Ca)缺陷。

Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET

Radiation hardness of SIMOX(separation by implanted oxygen)/NMOSFET by implanting N and F ion has been carefully studied in this paper.Both N and F ion implantation can reduce hole traps in the buried oxide and the interfacial regions,which consequently improves the radiation hardness,especially under high dose radiation conditions.Moreover,experimental data show that the higher dose of the N and F ion implantation is,the better radiation hardness is achieved.In order to minimize the influence on the threshold voltage of devices,it is important to choose suitable implantation dose and energy of N or F implantation that have smaller impact on the preradiation device performance.

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved.

Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.

Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates

Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.

Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures

We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.

Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy

We have studied the growth of GaInNAs/GaAs quantum well (QW) by molecular beam epitaxy using a DC plasma as the N sourer. The N concentration was independent of the As pressure and the In concentration, but inversely proportional to the growth rate. It was almost independent of T, over the range of 400-500 degreesC, but dropped rapidly when T-g exceeded 500 degreesC. Thermally-activated N surface segregation is considered to account for the strong falloff of the N concentration. As increasing N concentration, the steep absorption edge of the photovoltage spectra of GaInNAs/GaAs QW became gentle, the full-width at half-maximum of the photoluminescence (PL) peal; increased rapidly, and a so-called S-shaped temperature dependence of PL peak energy showed up. All these were attributed to the increasing localized state as N concentration. Ion-induced damage was one of the origins of the localized state. A rapid thermal annealing procedure could effectively remote the localized state. (C) 2001 Elsevier Science D.V. All rights reserved.

Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. (C) 2001 Elsevier Science B.V. All rights reserved.

Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.