Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
| Data(s) |
2001
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| Resumo |
The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. (C) 2001 Elsevier Science B.V. All rights reserved. The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. (C) 2001 Elsevier Science B.V. All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:19导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:19Z (GMT). No. of bitstreams: 1 2919.pdf: 98465 bytes, checksum: b9c405e134d663f71c8f29666ab920aa (MD5) Previous issue date: 2001 China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber. Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 10083, Peoples R China China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| Fonte |
Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY .Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability .见：ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 227,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2001,766-769 |
| Palavras-Chave | #半导体材料 #annealing #molecular beam epitaxy #germanium silicon alloys #semiconducting materials #STRAIN RELAXATION |
| Tipo |
会议论文 |
