Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
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2004
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Resumo |
The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved. The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:02导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:02Z (GMT). No. of bitstreams: 1 2781.pdf: 366176 bytes, checksum: 1bb51efb7c9c506681d078f7ba403366 (MD5) Previous issue date: 2004 CAS, Inst Semicond, SKLSM, Beijing 100083, Peoples R China; Arizona State Univ, CSSER, Tempe, AZ 85287 USA; Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA |
Identificador | |
Idioma(s) |
英语 |
Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
Fonte |
Jiang DS; Bian LF; Liang XG; Chang K; Sun BQ; Johnson S; Zhang YH .Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 268 (3-4),PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2004,336-341 |
Palavras-Chave | #半导体物理 #molecular beam epitaxy #quantum wells #GaAsSb/GaAs #GAAS #LASERS #GAIN |
Tipo |
会议论文 |