Effect of a feeding stimulant on feeding adaptation of gibel carp Carassius auratus gibelio (Bloch), fed diets with replacement of fish meal by meat and bone meal

The objectives of the study were to investigate the effect of a feeding stimulant on feeding adaptation of gibel carp (Carassius auratus gibelio Bloch) fed diets with replacement of fish meal by meat and bone meal (MBM), and whether or not the juvenile gibel carp could adapt to higher MBM level in the diet. Juvenile and adult gibel carp were tested. Two and one replacement levels were used for juvenile and adult fish respectively. Each group of diets was set as two types with or without a unique rare earth oxide: Y2O3, Yb2O3, La2O3, Sm2O3, Nd2O3 or Gd2O3 (only the first four rare earth oxides were used in adult diets) for four adaptation periods of 3, 7, 14 and 28 days respectively. After mixing, an equal mixture of all six diets for juvenile or four diets for adult was offered in excess for 2 days. During the last 2 days of each experiment, no feed was offered and faeces from each tank were collected. Feeding preference was expressed as relative feed intake of each diet, which was estimated based on the relative concentration of each marker in the faeces. Given some adaptation period, such as 3-28 days, the effects of MBM and squid extract inclusion on the preference to each diet were reduced. After 28 days adaptation, the preferences between groups were not significantly different.

Mechanical and tribological properties of epitaxial cubic boron nitride thin films grown on diamond

电子邮箱nataliya.deyneka@uni-ulm.de

The application of SnS nanoparticles to bulk heterojunction solar cells

Tin mono-sulphide (SnS) nanoparticles were synthesized by a facile method. Reactions producing narrow size distribution SnS nanoparticles with the diameter of 5.0-10 nm were carried out in an ethylene glycol solution at 150 degrees C for 24 h. Bulk heterojunction solar cells with the structure of indium tin oxide (ITO)/polyethylenedioxythiophene polystyrenesulphonate (PEDOT PSS)/SnS polymer/Al were fabricated by blending the nanoparticles with a conjugated polymer to form the active layer for the first time. Current density-voltage characterization of the devices showed that due to the addition of SnS nanoparticles to the polymer film, the device performance can be dramatically improved, compared with that of the pristine polymer solar cells. (c) 2009 Published by Elsevier B.V.

Abatement of waste gases and water during the processes of semiconductor fabrication

The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

确定~(137)Cs背景值所需的采样点数与采样面积

137Cs背景值的确定是利用核示踪技术研究土壤侵蚀的前提和根本,直接关系到侵蚀速率计算的准确与否。而大部分研究对137Cs背景值的确定均采取随机采样,没有统一的采样点数与确定的采样面积。本研究利用网格加密采样法,对未扰动地和长期耕种且未平整的农耕地各两块样地的137Cs背景值空间变异进行了分析,结果表明:在未扰动地与农耕地采样地块,137Cs采样点数与背景值空间变异系数都存在指数回归关系;在未扰动地块137Cs背景值存在较大空间变异性,且随着网格面积的扩大137Cs空间变异系数表现为增加趋势,在0.25m2范围内选取最少11个样点才能满足试验精度;在农耕地采样地块,因长期的耕种作用使得137Cs在耕层中混合相对均匀,137Cs背景值空间变异性显著变小,最少选取7个样点就能满足试验精度,且不受采样面积的影响。

提高人工植被培育中土壤抗旱性的综合措施

干旱条件下培育人工植被,采取适当的抗旱措施是必不可少的,其中作为植物生长发育所需水分、营养的载体,土壤是显著的可调控对象,对其合理处置与抗旱有着密切的关系。以土蓄水、抑制蒸发、改良土壤、培肥地力等有利于对有限水分的利用。提高土壤抗旱性的综合措施包括土壤耕作、土壤培肥、土壤覆盖、防止水分深层渗漏等方面。在气候暖化的背景下,为增强土壤抗旱措施的效果,提高其技术水平,分析了与蓄水、保水、集水以及用水有关的土壤抗旱方式及其特点。在综合述评的基础上,还讨论了土壤抗旱措施的技术应用问题和需要研究的主要方面。

Ge组分对SiGe HBT直流特性的影响

制作了基区Ge组分分别为0.20和0.23的多发射极指数双台面结构SiGe异质结双极型晶体管(HBT).实验结果表明,基区Ge组分的微小增加,引起了较大的基极复合电流,但减小了总的基极电流,提高了发射结的注入效率,电流增益成倍地提高.Ge组分从0.20增加到0.23,HBT的最大直流电流增益从60增加到158,提高了约2.6倍.

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process

High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.