Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode vertical bar non-aqueous electrolyte

Electrolyte electroreflectance spectra of the near-surface strained-layer In0.15Ga0.85As/GaAs double single-quantum-well electrode have been studied at different biases in non-aqueous solutions of ferrocene and acetylferrocene. The optical transitions, the Franz-Keldysh oscillations (FKOs) and the quantum confined Stark effects (QCSE) of In0.15Ga0.85As/GaAs quantum well electrodes are analyzed. Electric field strengths at the In0.15Ga0.85As/GaAs interface are calculated in both solutions by a fast Fourier transform analysis of FKOs. A dip is exhibited in the electric field strength versus bias (from 0 to 1.2 V) curve in ferrocene solution. A model concerning the interfacial tunneling transfer of electrons is used to explain the behavior of the electric field. (C) 2001 Elsevier Science B.V. All rights reserved.

Magnetic property and interface structure of Ta/NiO/NiFe/Ta

Ta/NiO/NiFe/Ta multilayers, utilizing Ta as buffer layer, were prepared by rf reactive and de magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 9.6x10(3) A/m at a NiO film thickness of 50 nm. The composition and chemical states at interface region of Ta/NiO/Ta were studied by using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an "intermixing layer" at the Ta/NiO land NiO/Ta) interface due to a thermodynamically favorable reaction 2Ta + 5NiO = 5Ni + Ta2O5. This interface reaction has a great effect on exchange coupling. The thickness of Ni+NiO estimated by XPS depth. profiles is about 8-10 nm.

Optical spectra of CdSe nanocrystals under hydrostatic pressure

Optical spectra of CdSe nanocrystals are measured at room temperature under pressure ranging from 0 to 5.2 GPa. The exciton energies shift linearly with pressure below 5.2 GPa. The pressure coefficient is 27 meV GPa(-1) for small CdSe nanocrystals with the radius of 2.4 nm. With the approximation of a rigid-atomic pseudopotential, the pressure coefficients of the energy band are calculated. By using the hole effective-mass Hamiltonian for the semiconductors with wurtzite structure under various pressures, we study the exciton states and optical spectra for CdSe nanocrystals under hydrostatic pressure in detail. The intrinsic asymmetry of the hexagonal lattice structure and the effect of spin-orbit coupling on the hole states are investigated. The Coulomb interaction of the exciton states is also taken into account. It is found that the theoretical results are in good agreement with the experimental values.

Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode

A novel composite InxGa1-xAs/GaAs/GaAs/AlxGa1-xAs multiple quantum well material with different well widths was studied as a new kind of photoelectrode in a photoelectrochemical cell. The photocurrent spectrum and photocurrent-electrode potential curve were measured in ferrocene nonaqueous solution. Pronounced quantization effects and strong exciton absorption were observed in the photocurrent spectrum. The effects of surface states and interfacial states on the photocurrent-electrode potential curve are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes

The photovoltaic spectral features and the behaviors of photocurrent versus the electrode potential for near surface In0.15Ga0.85As/GaAs quantum well electrodes have been investigated in nonaqueous solutions of ferrocene and acetylferrocene. The photovoltaic spectrum shows a sharp structure that reflects confined state-to-state exciton transition in the quantum well. Deep dips are observed in the photocurrent versus the electrode potential curves in both electrolytes at the different electrode potentials under the illumination of exciton resonance wavelength. These dips are qualitatively explained by considering the interfacial tunneling transfer of photogenerated electron within the quantum well.

Photoluminescence enhancement of porous silicon by organic cyano compounds

A pronounced photoluminescence enhancement on chemically oxidized porous silicon was induced by a series of organic cyano compounds including 1,2-dicyanoethylene (CE), 1,3-dicyanobenzene (1,3-CB), 1,4-dicyanobenzene (1,4-CB), 1-cyanonaphthalene (1-CN), and 9-cyanoanthracene (9-CA). Photoluminescence enhancement effects were reversible for all compounds studies in this work. A dependence of photoluminescence enhancement on the steric effect and the electronic characteristics of these compounds and the structure of the porous silicon substrates were analyzed in terms of the photoluminescence enhancing factors. Surface chemical composition examined by Fourier transform infrared (FTIR) spectra demonstrated that the surface Si-H bonds were not changed and no new luminescent compounds were formed on porous silicon surface during adsorption of cyano compounds. A mechanism based on induced surface states acting as radiative recombination centers by cyano compounds adsorption was suggested.

Linewidth of the infrared absorption spectra due to bound-to-continuum transition in GaAs/AlxGa1-xAs multiple quantum well structures

We have observed an extremely narrow absorption spectrum due to bound-to-continuum transition in GaAs/AlxGa1-xAs multiple quantum wells (MQWs). Its linewidth is only about one tenth of the values reported previously. Our calculation indicates that the broadening of the excited state in the continuum has little contribution to the absorption linewidth. We have grown a sample whose MQW region contains two kinds of wells with a minor thickness inhomogeneity. Its resultant absorption linewidth is six times as large as that of homogeneous well sample, which is in good agreement with our theoretical analysis. Thus we can suggest that the wider absorption spectra reported by many authors may be due to the well width inhomogeneity. (C) 1998 American Institute of Physics. [S0003-6951(98)03430-5]

Intrasubband and intersubband transitions in lightly and heavily doped GaAs/AlGa1-xAs multiple quantum wells

We use a polarizer to investigate quantum-well infrared absorption, and report experimental results as follows. The intrasubband transition was observed in GaAs/AlxGa1-xAs multiple quantum wells (MQWs) when the incident infrared radiation (IR) is polarized parallel to the MQW plane. According to the selection rule, an intrasubband transition is forbidden. Up to now, most studies have only observed the intersubband transition between two states with opposite parity. However, our experiment shows not only the intersubband transitions, but also the intrasubband transitions. In our study, we also found that for light doping in the well (4x10(18) cm(-3)), the intrasubband transition occurs only in the lowest subband, while for the heavy doping (8x10(18) cm(-3)), such a transition occurs not only in the lowest subband, but also in the first excited one, because of the electron subband filling. Further experimental results show a linear dependence of the intrasubband transition frequency on the root of the well doping density. These data are in good agreement with our numerical results. Thus we strongly suggest that such a transition can be attributed to plasma oscillation. Conversely, when the incident IR is polarized perpendicular to the MQW plane, intersubband-transition-induced signals appear, while the intrasubband-transition-induced spectra disappear for both light and heavy well dopings. A depolarization blueshift was also taken into account to evaluate the intersubband transition spectra at different well dopings. Furthermore, we performed a deep-level transient spectroscopy (DLTS) measurement to determine the subband energies at different well dopings. A good agreement between DLTS, infrared absorption, and numerical calculation was obtained. In our experiment, two important phenomena are noteworthy: (1) The polarized absorbance is one order of magnitude higher than the unpolarized spectra. This puzzling result is well explained in detail. (2) When the IR, polarized perpendicular to the well plane, normally irradiates the 45 degrees-beveled edge of the samples, we only observed intersubband transition spectra. However, the intrasubband transition signals caused by the in-plane electric-field component are significantly absent. The reason is that such in-plane electric-field components can cancel each other out everywhere during the light propagating in the samples. The spectral widths of bound-to-bound and bound-to-continuum transitions were also discussed, and quantitatively compared to the relaxation time tau, which is deduced from the electron mobility. The relaxation times deduced from spectral widths of bound-to-bound and bound-to-continuum transitions are also discussed, and quantitatively compared to the relaxation time deduced from electron mobility. [S0163-1829(98)01912-2].

Effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon

The photoluminescence of porous silicon can be modified sensitively by surface adsorption of different kinds of molecules. A quite different effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon were observed. The adsorption of 9-cyanoanthracene induced the photoluminescence enhancement, while anthracene adsorption resulted in photoluminescent quenching. An explanation of the interaction of adsorbates with surface defect sites of porous silicon was suggested and discussed. (C) 1998 Elsevier Science S.A.

Interfacial behaviour of a quantum well electrode/electrolyte: EER spectra of an SQW GaAs/AlxGa1-xAs electrode in HQ+BQ non-aqueous electrolyte

The quantum-confined Stark effect and the Franz-Keldysh oscillation of a single quantum well (SQW) GaAs/AlxGa1-xAs electrode were studied in non-aqueous hydroquinone + benzoquinone solution with electrolyte electroreflectance spectroscopy. By investigation of the relation of the quantum-confined Stark effect and the Franz-Keldysh oscillation with applied external bias, the interfacial behaviour of an SQW electrode was analysed. (C) 1997 Elsevier Science S.A.

Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode

In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD

A novel AlGaN/GaN/GaN/GaN double heterojunction high electron mobility transistors (DH-HEMTS) structure with an AlN interlayer on sapphire substrate has been grown by MOCVD. The structure featured a 6-10 nm In0.1Ga0.9N layer inserted between the GaN channel and GaN buffer. And wer also inserted one ultrathin. AlN interlayer into the Al/GaN/GaN interface, which significantly enhanced the mobility of two-dimensional electron gas (2DEG) existed in the GaN channel. AFM result of this structure shows a good surface morphology and a low dislocation density, with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu m x 5 mu m. Temperature dependent Hall measurement was performed on this sample, and a mobility as high as 1950 cm(2)/Vs at room temperature (RT) was obtained. The sheet carrier density was 9.89 x10(12) cm(2), and average sheet resistance of 327 Omega/sq was achieved. The mobility obtained in this paper is about 50% higher than other results of similar structures which have been reported. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.

Ground target detection, classification and sensor fusion in distributed fiber seismic sensor network - art. no. 683015

This paper describes the ground target detection, classification and sensor fusion problems in distributed fiber seismic sensor network. Compared with conventional piezoelectric seismic sensor used in UGS, fiber optic sensor has advantages of high sensitivity and resistance to electromagnetic disturbance. We have developed a fiber seismic sensor network for target detection and classification. However, ground target recognition based on seismic sensor is a very challenging problem because of the non-stationary characteristic of seismic signal and complicated real life application environment. To solve these difficulties, we study robust feature extraction and classification algorithms adapted to fiber sensor network. An united multi-feature (UMF) method is used. An adaptive threshold detection algorithm is proposed to minimize the false alarm rate. Three kinds of targets comprise personnel, wheeled vehicle and tracked vehicle are concerned in the system. The classification simulation result shows that the SVM classifier outperforms the GMM and BPNN. The sensor fusion method based on D-S evidence theory is discussed to fully utilize information of fiber sensor array and improve overall performance of the system. A field experiment is organized to test the performance of fiber sensor network and gather real signal of targets for classification testing.