Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode


Autoria(s): Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
Data(s)

2008

Resumo

In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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[Wang, Xinhua; Wang, Xiaoliang; Xiao, Hongling; Feng, Chun; Wang, Xiaoyan; Wang, Baozhu; Yang, Cuibai; Wang, Junxi; Wang, Cuimei; Ran, Junxue; Hu, Guoxin; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China

Identificador

http://ir.semi.ac.cn/handle/172111/7764

http://www.irgrid.ac.cn/handle/1471x/65661

Idioma(s)

英语

Publicador

WILEY-V C H VERLAG GMBH

PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY

Fonte

Wang, XH ; Wang, XL ; Xiao, HL ; Feng, C ; Wang, XY ; Wang, BZ ; Yang, CB ; Wang, JX ; Wang, CM ; Ran, JX ; Hu, GX ; Li, JM .Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode .见:WILEY-V C H VERLAG GMBH .PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS,PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY ,2008,VOL 5,NO 9,5 (9): 2979-2981

Palavras-Chave #半导体材料 #GAS SENSORS #HEMT STRUCTURES #MOBILITY #TEMPERATURE #TRANSISTORS #GROWTH #MOCVD #LAYER
Tipo

会议论文