Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
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2008
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Resumo |
In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. zhangdi于2010-03-09批量导入 Made available in DSpace on 2010-03-09T02:11:52Z (GMT). No. of bitstreams: 1 654.pdf: 223093 bytes, checksum: 40969baf62ff18d3a8d70e956891c814 (MD5) Previous issue date: 2008 [Wang, Xinhua; Wang, Xiaoliang; Xiao, Hongling; Feng, Chun; Wang, Xiaoyan; Wang, Baozhu; Yang, Cuibai; Wang, Junxi; Wang, Cuimei; Ran, Junxue; Hu, Guoxin; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China |
Identificador | |
Idioma(s) |
英语 |
Publicador |
WILEY-V C H VERLAG GMBH PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY |
Fonte |
Wang, XH ; Wang, XL ; Xiao, HL ; Feng, C ; Wang, XY ; Wang, BZ ; Yang, CB ; Wang, JX ; Wang, CM ; Ran, JX ; Hu, GX ; Li, JM .Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode .见:WILEY-V C H VERLAG GMBH .PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS,PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY ,2008,VOL 5,NO 9,5 (9): 2979-2981 |
Palavras-Chave | #半导体材料 #GAS SENSORS #HEMT STRUCTURES #MOBILITY #TEMPERATURE #TRANSISTORS #GROWTH #MOCVD #LAYER |
Tipo |
会议论文 |