Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode


Autoria(s): Liu Y; Xiao XR; Zeng YP
Data(s)

2000

Resumo

A novel composite InxGa1-xAs/GaAs/GaAs/AlxGa1-xAs multiple quantum well material with different well widths was studied as a new kind of photoelectrode in a photoelectrochemical cell. The photocurrent spectrum and photocurrent-electrode potential curve were measured in ferrocene nonaqueous solution. Pronounced quantization effects and strong exciton absorption were observed in the photocurrent spectrum. The effects of surface states and interfacial states on the photocurrent-electrode potential curve are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/12582

http://www.irgrid.ac.cn/handle/1471x/65261

Idioma(s)

英语

Fonte

Liu Y; Xiao XR; Zeng YP .Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode ,ELECTROCHEMISTRY COMMUNICATIONS,2000,2(6):404-406

Palavras-Chave #半导体材料 #multiple quantum well electrode #quantization effect #exciton transition #photocurrent spectrum #photoelectrochemical cell #SOLAR-CELLS #PHOTOCURRENT SPECTROSCOPY #SUPERLATTICE ELECTRODES #EFFICIENCY #PHOTOLUMINESCENCE #HETEROSTRUCTURE
Tipo

期刊论文