Effect of grain size on slow fatigue crack propagation and plastic deformation near crack tip

Fatigue crack growth and its threshold are investigated at a stress ratio of 0.5 for the three-point bend specimen made of Austenitic stainless steel. The effect of grain size on the crack tip plastic deformation is investigated. The results show that the threshold value Δkth increases linearly with the square root of grain size d and the growth rate is slower for materials with larger grain size. The plastic zone size and ratio for different grain sizes are different at the threshold. The maximum stress intensity factor is kmax and σys is the yield strength. At the same time, the characteristics of the plastic deformation development is discontinuous and anti-symmetric as the growth rate is increased from 2·10—8 to 10−7 mm/cycle.

Effects of geometric shape on the hydrodynamics of a self-propelled flapping foil

The hydrodynamics of a free flapping foil is studied numerically. The foil undergoes a forced vertical oscillation and is free to move horizontally. The effect of chord-thickness ratio is investigated by varying this parameter while fixing other ones such as the Reynolds number, the density ratio, and the flapping amplitude. Three different flow regimes have been identified when we increase the chord-thickness ratio, i.e., left-right symmetry, back-and-forth chaotic motion, and unidirectional motion with staggered vortex street. It is observed that the chord-thickness ratio can affect the symmetry-breaking bifurcation, the arrangement of vortices in the wake, and the terminal velocity of the foil. The similarity in the symmetry-breaking bifurcation of the present problem to that of a flapping body under constraint is discussed. A comparison between the dynamic behaviors of an elliptic foil and a rectangular foil at various chord-thickness ratios is also presented.

A Mechanical Model For The Quantification Of The Effect Of Laser Quenching On Ctod In Steels

The technology of laser quenching is widely used to improve the surface properties of steels in surface engineering. Generally, laser quenching of steels can lead to two important results. One is the generation of residual stress in the surface layer. In general, the residual stress varies from the surface to the interior along the quenched track depth direction, and the residual stress variation is termed as residual stress gradient effect in this work. The other is the change of mechanical properties of the surface layer, such as the increases of the micro-hardness, resulting from the changes of the microstructure of the surface layer. In this work, a mechanical model of a laser-quenched specimen with a crack in the middle of the quenched layer is developed to quantify the effect of residual stress gradient and the average micro-hardness over the crack length on crack tip opening displacement (CTOD). It is assumed that the crack in the middle of the quenched layer is created after laser quenching, and the crack can be a pre-crack or a defect due to some reasons, such as a void, cavity or a micro-crack. Based on the elastic-plastic fracture mechanics theory and using the relationship between the micro-hardness and yield strength, a concise analytical solution, which can be used to quantify the effect of residual stress gradient and the average micro-hardness over the crack length resulting from laser quenching on CTOD, is obtained. The concise analytical solution obtained in this work, cannot only be used as a means to predict the crack driving force in terms of the CTOD, but also serve as a baseline for further experimental investigation of the effect after laser-quenching treatment on fracture toughness in terms of the critical CTOD of a specimen, accounting for the laser-quenching effect. A numerical example presented in this work shows that the CTOD of the quenched can be significantly decreased in comparison with that of the unquenched. (C) 2008 Elsevier B.V. All rights reserved.

The effect of acute stress on LTP and LTD induction in the hippocampal CA1 region of anesthetized rats at three different ages

Not all experiences are memorized equally well. Especially, some types of stress are unavoidable in daily life and the stress experience can be memorized for life. Previous evidence has showed that synaptic plasticity, such as long-term potentiation (LTP) that may be the major cellular model of the mechanism underlying learning and memory, is influenced by behavioral stress. However, the effect of behavioral stress on age-related synaptic plasticity in-vivo was primarily known. Here we found that the LTP induction in the hippocampal CA1 region of anesthetized rats obviously showed inverted-U shape related to ages (4, 10 and 74 weeks old rats), but low-frequency stimulation was unable to induce reliable long-term depression (LTD) in these animals. Furthermore, acute elevated platform (EP) stress enabled reliable LTD significantly and completely blocked LTP induction at these ages. Importantly, LTD after exposure to acute EP stress showed similar magnitude over these ages. The present results that stress enables LTD but impairs LTP induction at these three ages strengthen a view that stress experience-dependent LTD (SLTD) may underlie stress form of aberrant memories. (C) 2004 Elsevier B.V. All rights reserved.

Investigation of Electronic Energy Levels in InAs Quantum Dot with Shape of Lens by Using B-Spline Technique

The dependence of the electronic energy levels on the size of quantum dots (QDs) with the shape of spherical lens is studied by using the B-spline technique for the first time. Within the framework of the effective-mass theory, the values of electronic energy levels are obtained as a function of the height, radius and volume of QDs, respectively. When the height or radius of QDs increases, all the electronic energy levels lower, and the separations between the energy levels decrease. For lens-shape QDs, height is the key factor in dominating the energy levels comparing with the effect of radius, especially in dominating the ground-state level. These computational results are compared with that of other theoretical calculation ways. The B-spline technique is proved to be an effective way in calculating the electronic structure in QDs with the shape of spherical lens.

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

The effect of rapid thermal annealing on the InAs quantum dots (QDs) grown by atomic layer molecular beam epitaxy and capped with InGaAs layer has been investigated using transmission electron microscopy and photoluminescence (PL). Different from the previously reported results, no obvious blueshift of the PL emission of QDs is observed until the annealing temperature increases up to 800 degreesC. The size and shape of the QDs annealed at 750 degreesC have hardly changed indicating the relatively weak Ga/In interdiffusion, which is characterized by little blueshift of the PL peak of QDs. The QD size increases largely and a few large clusters can be observed after 800 degreesC RTA, implying the fast interdiffusion and the formation of InGaAs QDs. These results indicate that the delay of the blueshift of the PL peak of QDs is correlated with the abnormal interdiffusion process, which can be explained by two possible reasons: the reduction of excess-As-induced defects and the redistribution of In, Ga atoms around the InAs QDs resulted from the sub-monolayer deposition of InGaAs capping layer. (C) 2004 Elsevier B.V. All rights reserved.

Mesoscopic Fano effect modulated by Rashba spin-orbit coupling and external magnetic field

By employing non-equilibrium Green's function method, the mesoscopic Fano effect modulated by Rashba spin-orbit (SO) coupling and external magnetic field has been elucidated for electron transport through a hybrid system composed of a quantum dot (QD) and an Aharonov-Bohm (AB) ring. The results show that the orientation of the Fano line shape is modulated by the Rashba spin-orbit interaction k(R)L variation, which reveals that the Fano parameter q will be extended to a complex number, although the system maintains time-reversal symmetry (TRS) under the Rashba SO interaction. Furthermore, it is shown that the modulation of the external magnetic field, which is applied not only inside the frame, but also on the QD, leads to the Fano resonance split due to Zeeman effect, which indicates that the hybrid is an ideal candidate for the spin readout device. (C) 2007 Elsevier B.V All rights reserved.

Electric field tunable electron g factor and high asymmetrical Stark effect in InAs1-xNx quantum dots

The electronic structure, electron g factor, and Stark effect of InAs1-xNx quantum dots are studied by using the ten-band k center dot p model. It is found that the g factor can be tuned to be zero by the shape and size of quantum dots, nitrogen (N) doping, and the electric field. The N doping has two effects on the g factor: the direct effect increases the g factor and the indirect effect decreases it. The Stark effect in quantum ellipsoids is high asymmetrical and the asymmetry factor may be 319. (c) 2007 American Institute of Physics.

Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells

The influence of nonradiative recombination on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by time-resolved photoluminescence under various excitation intensities. It is found that the PL decay process strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual nonexponential behavior and show a convex shape. By introducing a new parameter of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. The cw PL data further demonstrate the nonradiative recombination effect on the optical properties of GaInNAs/GaAs quantum wells. (c) 2006 American Institute of Physics.

Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect

By mass-selected low energy ion beam deposition, amorphous carbon film was obtained. X-ray diffraction, Raman and Auger electron spectroscopy depth line shape measurements showed that such carbon films contained diamond particles. The main growth mechanism is subsurface implantation. Furthermore, it was indicated in a different way that ion bombardment played a decisive role in bias enhanced nucleation of chemical vapor deposition diamond.

The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates

Strained InAs nanostructures have been grown by solid-source molecular beam epitaxy in In0.52Al0.48As matrix on different InP substrate surfaces ((0 0 1) and (1 1 n)A/B (n = 1 - 5)). The morphology of the nanostructures was characterized using atomic force microscopy (AFM). The AFM results reveal interesting differences in the size, shape, and alignment of the nanostructures between different oriented surfaces. It was found that some faceted nanostructures tend to form on A-type surfaces, the shape and the alignment of these nanostructures show clear dependence on the substrate orientation. Samples grown on (0 0 1) and B-type surfaces showed preferentially dense round dots. Dots formed on (1 1 3)B, (1 1 3)B and (1 1 5)B surfaces have a higher dot density and size homogeneity, which shows a potential for the production of high-quality and customized self-assembled quantum dots for photonics applications. (C) 2000 Elsevier Science B.V. All rights reserved.

Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)

The effect of Si overgrowth on the structural and luminescence properties of strained Ge layer grown on Si(1 0 0) is studied. Capping Si leads to the dissolution of Ge island apex and reduced island height. The structural changes in island shape, especially in chemical composition during Si overgrowth have a large effect on the PL properties. The integrated PL intensity of Ge layer increases and there are large blue shifts in peak energies after capping Si. The PL spectra from buried Ge layer are consistent with type-II band alignment in SiGe/Si. We show that the PL properties from buried Ge layer may be tailored by modifying the cap layer growth conditions as well as post-growth annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z

The nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells.

TEMPERATURE EFFECT ON POROUS SILICON LUMINESCENCE

A theoretical surface-state model of porous-silicon luminescence is proposed. The temperature effect on the PhotoLuminescence (PL) spectrum for pillar and spherical structures is considered, and it is found that the effect is dependent on the doping concentration, the excitation strength, and the shape and dimensions of the Si microstructure. The doping concentration has an effect on the PL intensity at high temperatures and the excitation strength has an effect on the PL intensity at low temperaturs. The variations of the PL intensity with temperature are different for the pillar and spherical structures. At low temperatures the PL intensity increases in the pillar structure, while in the spherical structure the PL intensity decreases as the temperature increases, at high temperatures the PL intensities have a maximum for both models. The temperature, at which the PL intensity reaches its maximum, depends on the doping concentration. The PL spectrum has a broader peak structure in the spherical structure than in the pillar structure. The theoretical results are in agreement with experimental results.

Interfacial behaviour of quantum well electrode/electrolyte: effect of redox species on EER spectra of a single quantum well GaAs vertical bar AlxGa1-xAs electrode

The EER spectra of a single quantum well GaAs\AlxGa1-xAs electrode were studied as a function of applied reverse bias in ferrocene, p-methyl nitrobenzene and hydroquinone+benzoquinone non-aqueous solutions. EER spectra were compared for different redox species and showed that a pronounced quantum-confined Stark effect and a Franz-Keldysh oscillation for a single quantum well electrode were obtained in the p-methyl-nitrobenzene- and hydroquinone+benzoquinone-containing solutions. A surface interaction of the single quantum well electrode with ferrocene led to fewer changes in the electric field of the space charge layer for reverse bias; this was suggested to explain the weak quantum-confined Stark effect and Franz-Keldysh oscillation effect observed for the single quantum well electrode in the ferrocene-containing solution. (C) 1997 Elsevier Science S.A.