Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect


Autoria(s): Liao MY; Zhang JH; Qin FG; Liu ZK; Yang SY; Wang ZG; Lee ST
Data(s)

2000

Resumo

By mass-selected low energy ion beam deposition, amorphous carbon film was obtained. X-ray diffraction, Raman and Auger electron spectroscopy depth line shape measurements showed that such carbon films contained diamond particles. The main growth mechanism is subsurface implantation. Furthermore, it was indicated in a different way that ion bombardment played a decisive role in bias enhanced nucleation of chemical vapor deposition diamond.

Identificador

http://ir.semi.ac.cn/handle/172111/12376

http://www.irgrid.ac.cn/handle/1471x/65158

Idioma(s)

中文

Fonte

Liao MY; Zhang JH; Qin FG; Liu ZK; Yang SY; Wang ZG; Lee ST .Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect ,ACTA PHYSICA SINICA,2000,49(11):2186-2190

Palavras-Chave #半导体物理 #amorphous carbon #ion bombardment #mass-selected low energy ion beam #CHEMICAL-VAPOR-DEPOSITION #BIAS-ENHANCED NUCLEATION #DIAMOND FILMS #RAMAN-SCATTERING #GROWTH #SILICON #MECHANISM
Tipo

期刊论文