Technique for diagnosing x-ray laser beam quality by use of the moire signal

We present what we believe is a novel technique based on the moire effect for fully diagnosing the beam quality of an x-ray laser. Using Fresnel diffraction theory, we investigated the intensity profile of the moire pattern when a general paraxial beam illuminates a pair of Ronchi gratings in the quasi-far field. Two formulas were derived to determine the beam quality factor M-2 and the effective radius of curvature R-e from the moire pattern. On the basis of the results, the far-field divergence, the waist location, and the radius can be calculated further. Finally, we verified the approach by use of numerical simulation. (C) 1999 Optical Society of America [S0740-3232(99)01502-1].

Precise determination of anomalous scattering factors of Ge by using X-ray resonant scattering

Variations of peak position of the rocking curve in the Bragg case are measured from a Ge thin crystal near the K-absorption edge. The variations are caused by a phase change of the real part of the atomic scattering factor. Based on the measurement, the values of the real part are determined with an accuracy of better than 1%. The values are the most reliable ones among those reported values so far as they are directly determined from the normal atomic scattering factors.

Study on the layer structure of W/C multilayers deposited by magnetron sputtering using x-ray reflectivity

A study on the layer structure of W/C multilayers deposited by magnetron sputtering is reported. In the study, soft x-ray resonant reflectivity and hard x-ray grazing incidence reflectivity of the W/C multilayers were measured. The imperfections at the interface such as interdiffusion and formation of compounds were dealt with by two methods. On analyzing the experimental results, we found that the incorporation of an interlayer was a more suitable method than the traditional statistical method to describe the layer structure of a W/C system we fabricated. The optical constants of each layer at a wavelength of 4.48 nm were also obtained from the analysis. Copyright (C) 2008 John Wiley & Sons, Ltd.

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa.

Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy

The valence band offset (VBO) of the InN/GaAs heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.94 +/- 0.23 eV. The conduction band offset is deduced from the known VBO value to be 1.66 +/- 0.23 eV, and a type-II band alignment forms at the InN/GaAs heterojunction. (C) 2008 American Institute of Physics.

Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of MgO (111)/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 3.65 +/- 0.23 eV and the conduction band offset is deduced to be 0.92 +/- 0.23 eV, indicating that the heterojunction has a type- I band alignment. The accurate determination of the valence and conduction band offsets is important for the applications of MgO/SiC optoelectronic devices. (C) 2008 American Institute of Physics.

Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of the wurtzite ZnO/4H-SiC heterojunction is directly determined to be 1.61 +/- 0.23 eV by x-ray photoelectron spectroscopy. The conduction band offset is deduced to be 1.50 +/- 0.23 eV from the known VBO value, which indicates a type-II band alignment for this heterojunction. The experimental VBO value is confirmed and in good agreement with the calculated value based on the transitive property of heterojunctions between ZnO, SiC, and GaN. (C) 2008 American Institute of Physics.

Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction

GaSb epilayers grown on GaAs(001) vicinal substrate misoriented towards (111) plane were studied using high-resolution x-ray diffraction (HRXRD). The results show that GaSb epilayers exhibit positive crystallographic tilt and the distribution of 60 degrees misfit dislocations (MDs) is imbalanced. The vicinal substrate also leads to the anisotropy of the mosaic structure, i.e. the lateral coherent lengths in [1 (1) over bar0] directions are larger than those in [110] directions. Furthermore, the full-width at half maximum (FWHM) of the off-axis peaks varies with the inclination angle, which is a result of different dislocation densities in the {111} glide planes.

Valence band offset of MgO/InN heterojunction measured by x-ray photoelectron spectroscopy

MgO may be a promising gate dielectric and surface passivation film for InN based devices and the valence band offset of MgO/InN heterojunction has been measured by x-ray photoelectron spectroscopy. The valence band offset is determined to be 1.59 +/- 0.23 eV. Given the experimental band gap of 7.83 for the MgO, a type-I heterojunction with a conduction band offset of 5.54 +/- 0.23 eV is found. The accurate determination of the valence and conduction band offsets is important for use of MgO/InN electronic devices. (c) 2008 American Institute of Physics.

Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset at the ZnO/GaAs heterojunction interface. The valence band offset is determined to be 2.39 +/- 0.23 eV. As a consequence, a type-II heterojunction with a conduction band offset of -0.44 +/- 0.23 eV is found. The directly obtained value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. (c) 2008 American Institute of Physics.