Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy

The valence band offset (VBO) of the InN/GaAs heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.94 +/- 0.23 eV. The conduction band offset is deduced from the known VBO value to be 1.66 +/- 0.23 eV, and a type-II band alignment forms at the InN/GaAs heterojunction. (C) 2008 American Institute of Physics.

National Science Foundation of China 60506002 60776015Special Funds for Major State Basic Research Project (973 program) of China 2006CB60490 863 High Technology R&D Program of China 2007AA03Z402 2007AA03Z451 This work was supported by the National Science Foundation of China (Nos. 60506002 and 60776015), the Special Funds for Major State Basic Research Project (973 program) of China (No. 2006CB60490), and the 863 High Technology R&D Program of China (Nos. 2007AA03Z402 and 2007AA03Z451).