Valence band offset of MgO/InN heterojunction measured by x-ray photoelectron spectroscopy
Data(s) |
2008
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Resumo |
MgO may be a promising gate dielectric and surface passivation film for InN based devices and the valence band offset of MgO/InN heterojunction has been measured by x-ray photoelectron spectroscopy. The valence band offset is determined to be 1.59 +/- 0.23 eV. Given the experimental band gap of 7.83 for the MgO, a type-I heterojunction with a conduction band offset of 5.54 +/- 0.23 eV is found. The accurate determination of the valence and conduction band offsets is important for use of MgO/InN electronic devices. (c) 2008 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang, PF ; Liu, XL ; Zhang, RQ ; Fan, HB ; Song, HP ; Wei, HY ; Jiao, CM ; Yang, SY ; Zhu, QS ; Wang, ZG .Valence band offset of MgO/InN heterojunction measured by x-ray photoelectron spectroscopy ,APPLIED PHYSICS LETTERS,2008 ,92(4): Art. No. 042906 |
Palavras-Chave | #半导体材料 #INN #ALN #GAN |
Tipo |
期刊论文 |