Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
Data(s) |
2008
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Resumo |
The valence band offset (VBO) of the wurtzite ZnO/4H-SiC heterojunction is directly determined to be 1.61 +/- 0.23 eV by x-ray photoelectron spectroscopy. The conduction band offset is deduced to be 1.50 +/- 0.23 eV from the known VBO value, which indicates a type-II band alignment for this heterojunction. The experimental VBO value is confirmed and in good agreement with the calculated value based on the transitive property of heterojunctions between ZnO, SiC, and GaN. (C) 2008 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Fan, HB ; Sun, GS ; Yang, SY ; Zhang, PF ; Zhang, RQ ; Wei, HY ; Jiao, CM ; Liu, XL ; Chen, YH ; Zhu, QS ; Wang, ZG .Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy ,APPLIED PHYSICS LETTERS,2008 ,92(19): Art. No. 192107 |
Palavras-Chave | #光电子学 #ZNO FILMS #GROWTH #DIODES #GAN |
Tipo |
期刊论文 |