A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam

A GaAs-based micro-opto-electro-mech anical-systems(MOEMS) tunable resonant cavity enhanced(RCE)photodetector with a continuous tuning range of 31nm under a 6V tuning voltage is demonstrated. The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector. The maximum and minimum peak quantum efficiency during the tuning are 36.9 % and 30. 8 %, respectively. The maximum and minimum full-width-at-halfmaximum (FWHM) are 20nm and 14nm,respectively. The dark current density is 7.46A/m2 without bias.

VCSEL based optoelectronic multiple chip modules

We report on optoelectronic multiple chip modules, consisting of vertical cavity surface emitting laser(VCSEL), photodetector and 1.2 mum CMOS electronic circuit, The hybrid integrated components operate at a date rate of 155Mb/s, which could be used in optical interconnects for multiple computers.

A model of dislocations at the interface of the bonded wafers

Wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. This technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. A model of dislocations at the bonded interface is proposed in this paper. Edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. But the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling.

Single ridge waveguide electroabsorption modulated DFB laser for 2.5Gb/s transmission

In this paper we proposed a single ridge waveguide electroabsorption modulated distributed feedback laser (EML) for long-haul high-speed optical fiber communication system. This EML was successfully fabricated by two step metal organic vapor phase epitaxy (MOVPE) including selective area growth (SAG) and helium partially implantation. No obvious changes of the threshold current (< 0.2 mA), extinction ratio (< 0.1 dB), output power (< 0.2 dBm) and isolation resistance were achieved in the preliminary aging test. With 2.5 Gb/s NRZ modulation, no power penalty was observed after the optical signal was transmitted through 280 Km normal single mode fiber.

Integrated multimode interference couplers in silicon-on insulator

Silicon-on insulator (SOI) is an attractive platform for the fabrication of optoelectronic integrated circuit. Thin cladding layers (< 1.0m) can be used in SOI waveguide due to the large index step between Si and SiO2, making them compatible with the VLSI technology. Here we demonstrate the fabrication of 1 x 4 and 2 x 2 multimode interference (MMI) coupler based on SOI technology. Performances of the devices are analyzed. The minimum excess loss of the devices is about 1.8dB. The devices show uniform power distribution.

An investigation on fiber coupled polymer waveguide for electro-optic modulator

A novel crosslinkable polyurethane is used as the core layer of the electro-optic(E-O) modulator. The refractive index and dispersion of this material have been detected by analyzing the F-P oscillation in transmission spectra. Calculated results from the effective index method are given to design the Mach-Zehnder and straight 5-layer ridge wave-guide device (including the metal electrodes). With light at 1.31 mum being fiber coupled into waveguide, the mode properties of these devices have been demonstrated in a micron control system. The guided mode is accordant with the theoretical analysis.

Si-based resonant-cavity-enhanced photodetector

Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300nm, The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5V is measured 10.2mA/W at 1285nm, and a full-width at half maximum of 25nm for the top-illumination RCE photodetector, and 19mA/W at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305nm with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.

The fabrication of thick SiO2 layer by anodization

Silicon-based silica waveguide (SiO2/Si) devices have huge applications in optical telecommunication. SiO2 up to 25-mu m thick is necessary for some passive SiO2/Si waveguide devices. Oxidizing porous silicon to obtain thick SiO2 as cladding layer is presented. The experimental results of porous layer and oxidized porous layer formation were given. The relationship between cracking of SiO2 and temperature varying rate was given experimentally. Such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent SiO2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (C) 2000 Elsevier Science B.V. All rights reserved.

Ruby:一个基于移动设备的个人信息管理系统

为满足移动环境对非结构化个人信息管理的自然性和高效性的需求,提出一个基于移动设备的个人信息管理系统Ruby.首先分析了移动环境对个人信息管理的需求,描述了系统框架,接着介绍了系统界面和交互过程,并阐述了支持该系统的2个主要技术:非结构化笔记编辑技术和基于笔迹标签的检索技术.对2个技术和整个系统的评估结果表明,该系统能够满足移动环境对自然交互、非结构化信息采集加工及个人信息自然检索的需求.

VSR:多sink机会移动传感器网络的数据收集

机会移动传感器网络可应用在野生动物监控,或利用手持设备嵌入的传感器收集城市信息等场景,往往需要将数据从源节点传输到多个基站中的任一个.提出了一个基于虚拟空间的路由机制VSR(virtual space-based routing),采用"存储-携带-转发"的传输模式实现数据收集.每个传感器节点根据与多个sink节点的期望传输延迟映射成高维空间中的一个坐标点,消息传输对应于从源节点移动到空间原点的过程.细粒度的转发决策特性,使VSR自适应于网络的动态变化,具有很好的鲁棒性.此外,VSR机制具有很低的计算和存储开销,非常适合资源受限的传感器节点.两种不同随机特性场景下的模拟实验验证了VSR机制比ZebraNet的基于历史的转发机制和随机转发机制的性能更好.

Fabrication and spectroscopic broadening properties for 1.5 mu m amplification of Er3+-doped BaF2 nanoparticles

We show the potential application of Er3+-doped BaF2 nanoparticles prepared from microemulsion technology for 1.5 mu m amplification in telecommunication. Nanoparticles with different sizes of about 8, 10, and 20.5 nm were prepared. The XRD patterns showed the excursion of diffraction peaks. When the particle size is smaller or the diffraction angle is larger, this kind of excursion will be more serious.

Self-Assembled Growth of Agln(MoO4)(2) Submicroplates into Hierarchical Structures and Their Near-Infrared Luminescent Properties

Layer-controlled hierarchical flowerlike AgIn(MoO4)(2) microstructures with "clean" surfaces using submicroplates as building blocks without introducing any template have been fabricated through a low-cost hydrothermal method. The near-infrared luminescence of lanthanide ion (Nd, Er, and Yb) doped AgIn(MoO4)(2) microstructures, in the 1300-1600 nm region, was discussed and is of particular interest for telecommunication applications. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, electron diffraction, and photoluminescence spectra were used to characterize these materials.

Syntheses, structures and near-IR luminescent studies on ternary lanthanide (Er-III, Ho-III, Yb-III, Nd-III) complexes containing 4,4,5,5,6,6,6-heptafluoro-1-(2-thienyl)hexane-1,3-dionate

The ligand Hhfth [4,4,5,5,6,6,6-heptafluoro-1-(2-thienyl)hexane-1,3-dione], which contains a heptafluoropropyl group, has been used to synthesize several new ternary lanthanide complexes (Ln = Er, Ho, Yb, Nd) in which the synergistic ligand is 1,10-phenanthroline (phen) or 2,2'-bipyridine (bipy). The two series of complexes are [Ln(hfth)(3)phen] [abbreviated as (Ln)1, where Ln = Er, Ho, Yb] and [Ln(hfth)(3)bipy] [abbreviated as (Ln)2, where Ln = Er, Ho, Yb, Nd]. Members of the two series have been structurally characterized. The growth morphology, diffuse reflectance (DR) spectra, thermogravimetric analyses, and photophysical studies of these complexes are described in detail. After ligand-mediated excitation of the complexes, they all show the characteristic near-infrared (NIR) luminescence of the corresponding Ln(3+) ions (Ln = Er, Ho, Yb, Nd). This is attributed to efficient energy transfer from the ligands to the central Ln(3+) ions, i.e. an antenna effect. The heptafluorinated substituent in the main hfth sensitizer serves to reduce the degree of vibrational quenching. With these NIR-luminescent lanthanide complexes, the luminescent spectral region from 1300 to 1600 nm, which is of particular interest for telecommunication applications, can be covered completely.