The fabrication of thick SiO2 layer by anodization
| Data(s) |
2000
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| Resumo |
Silicon-based silica waveguide (SiO2/Si) devices have huge applications in optical telecommunication. SiO2 up to 25-mu m thick is necessary for some passive SiO2/Si waveguide devices. Oxidizing porous silicon to obtain thick SiO2 as cladding layer is presented. The experimental results of porous layer and oxidized porous layer formation were given. The relationship between cracking of SiO2 and temperature varying rate was given experimentally. Such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent SiO2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (C) 2000 Elsevier Science B.V. All rights reserved. Silicon-based silica waveguide (SiO2/Si) devices have huge applications in optical telecommunication. SiO2 up to 25-mu m thick is necessary for some passive SiO2/Si waveguide devices. Oxidizing porous silicon to obtain thick SiO2 as cladding layer is presented. The experimental results of porous layer and oxidized porous layer formation were given. The relationship between cracking of SiO2 and temperature varying rate was given experimentally. Such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent SiO2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (C) 2000 Elsevier Science B.V. All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:26导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:26Z (GMT). No. of bitstreams: 1 2958.pdf: 189607 bytes, checksum: 284250df88da8662287bf0edff27e8ea (MD5) Previous issue date: 2000 Int Union Mat Res Soc. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China; Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China Int Union Mat Res Soc. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| Fonte |
Ou HY; Yang QQ; Lei HB; Wang QM; Hu XW .The fabrication of thick SiO2 layer by anodization .见：ELSEVIER SCIENCE BV .OPTICAL MATERIALS, 14 (3),PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2000,271-275 |
| Palavras-Chave | #半导体材料 #thick SiO2 layer #porous silicon #SiO2/Si waveguide device #WAVE-GUIDES #SILICON |
| Tipo |
会议论文 |
