Intense upconversion luminescence and effect of local environment for Tm3+/Yb3+ co-doped novel TeO2-BiCl3 glass system

We present the results of a study that uses theoretical and experimental methods to investigate the characteristics of the upconversion luminescence of Tm3+/Yb3+ codoped TeO2-BiCl3 glass system as a function of the BiCl3 fraction. These glasses are potentially important in the design of upconversion fiber lasers. Effect of local environment around Tm3+ on upconversion fluorescence intensity was analyzed by theoretical calculations. The structure and spectroscopic properties were investigated in the experiments by measuring the Raman spectra, IR transmission spectra, and absorption and fluorescence intensities at room temperature. The results indicate that blue luminescence quantum efficiency increases with increasing BiCl3 content from 10 to 60 mol%, which were interpreted by the increase of asymmetry of glass structure, decrease of phonon energy and removing of OH- groups. (c) 2005 Elsevier B.V. All rights reserved.

Effect of desert soil algae on the stabilization of fine sands

Four filamentous cyanobacteria, Microcoleus vaginatus, Phormidium tenue, Scytonema javanicum (Kutz.) and Nostoc sp., and a single-celled green alga, Desmococcus olivaceus, all isolated from Shapotou (Ningxia Hui Autonomous Region of China), were batch cultured and inoculated onto unconsolidated sand in greenhouse and field experiments. Their ability to reduce wind erosion in sands was quantified by using a wind tunnel laboratory. The major factors related to cohesion of algal crusts, such as biomass, species, species combinations, bioactivity, niche, growth phase of algae, moisture, thickness of the crusts, dust accretion (including dust content and manner of dust added) and other cryptogams (lichens, fungi and mosses) were studied. The best of the five species were M. vaginatus and P. tenue, while the best mix was a blend of 80% M. vaginatus and 5% each of P. tenue, S. javanicum, Nostoc sp. and D. olivaceus. The threshold friction velocity was significantly increased by the presence of all of the cyanobacterial species, while the threshold impact velocity was notably increased only by the filamentous species. Thick crusts were less easily eroded than thin crusts, while biomass was more effective than thickness. Dust was incorporated best into Microcoleus crust when added in small amounts over time, and appeared to increase growth of the cyanobacterium as well as strengthen the cohesion of the crust. Microbial crust cohesion was mainly attributed to algal aggregation, while lichens, fungi and mosses affected more the soil structure and physico-chemical properties.

Effect of several feeding stimulants on diet preference by juvenile gibel carp (Carassius auratus gibelio), fed diets with or without partial replacement of fish meal by meat and bone meal

The objectives of this work were to study the effects of several feeding stimulants on gibel carp fed diets with or without replacement of fish meal by meat and bone meal (MBM). The feeding stimulants tested were betaine, glycine, L-lysine, L-methionine, L-phenylalanine, and a commercial squid extract. Three inclusion levels were tested for each stimulant (0.18, 0.5%, and 1% for betaine and 0.1, 0.25 and 0.5% for the other stimulants). Two basal diets (40% crude protein) were used. one with 26% fish meal (FM), and the other with 21% fish meal and 6% MBM, Betaine at 0.1% in the fish meal group and at 0.5% in the meat and bone meal group was used in all experiments for comparison among stimulants. In the experiment on each stimulant, six tanks of fish were equally divided into two groups, one fed the FM diet, and the other fed the MBM diet. After 7 days' adaptation to the basal diet, in which the fish were fed to satiation twice a day, the fish were fed for another 7 days an equal mixture of diets containing varying levels of stimulants. Each diet contained a unique rare earth oxide as inert marker (Y2O3, Yb2O3, La2O3, Sm2O3 or Nd2O3). During the last 3 days of the experiment, faeces from each tank were collected. Preference for each diet was estimated based on the relative concentration of each marker in the faeces. Gibel carp fed the FM diet had higher intake than those fed the MBM diet, but the difference was significant only in the experiments on betaine, glycine and L-methionine. None of the feeding stimulants tested showed feeding enhancing effects in FM diets. All feeding stimulants showed feeding enhancing effects in MBM diets. and the optimum inclusion level was 0.5% for betaine, 0.1% for glycine, 0.25% for L-lysine, 0.1% for L-methionine. 0.25% For L-phenylalanine. and 0.1% for squid extract. The squid extract had the strongest stimulating effect among all the stimulants tested. (C) 2001 Elsevier Science B.V. All rights reserved.

Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells

Effects of interface roughness and dislocation density on the electroluminescence (EL) intensity of InGaN multiple quantum wells (MQWs) are investigated. It is found that the EL intensity increases with the number of satellite peaks in the x-ray diffraction experiments of InGaN MQW samples. It is indicated that the rough interface will lead the reduction of EL intensity of InGaN MQW samples. It is also found that the EL intensity increases with the decrease of dislocation density which is characterized by the x-ray diffraction measurements. It is suggested that the EL intensity of InGaN MQWs can be improved by decreasing the interface roughness and dislocation density.

Effect on nitrogen acceptor as Mg is alloyed into ZnO

Our Raman measurement indicates that the intensity of the peaks (510 and 645 cm(-1)) related to nitrogen concentration is enhanced in MgZnO compared with that in ZnO. Using first-principles band structure methods, we calculated the formation energy and transition energy level for nitrogen acceptor in ZnO and random MgxZn1-xO (with x=0.25) alloy. Our calculations show that the incorporation of nitrogen can be enhanced as Mg is alloyed into ZnO, which agrees with our experiments. The acceptor energy level deeper in the alloy ascribes to the downward shift of the valence-band maximum edge in the presence of magnesium. (c) 2008 American Institute of Physics.

Observation of the surface circular photogalvanic effect in InN films

A sizable spin-dependent photocurrent related to the interband transition in InN films is observed. The surface charge accumulation layer is suggested to be the origin of the circular photogalvanic current, which is consistent with the result of uniaxial strain experiments and the comparison of front and back incidence. The homogeneous photocurrent demonstrates the existence of spin splitting in the InN surface layer, and the structure inversion asymmetry (SIA)-dominant mechanism indicates a great possibility for the manipulation of spin splitting, which would undoubtedly benefit further research and applications of spintronics. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Concentration effect of Mn2+ on the photoluminescence of ZnS : Mn nanocrystals

Mn-doped ZnS nanocrystals of about 3 nm diameter were synthesized by a wet chemical method. X-ray diffraction (XRD) measurements showed that the nanocrystals have the structure of cubic zinc blende. The broadening of the XRD lines is indicative of nanomaterials. Room temperature photoluminescence (PL) spectrum of the undoped sample only exhibited a defected-related blue emission band. But for the doped samples, an orange emission from the Mn2+ T-4(1)-(6)A(1) transition was also observed, apart from the blue emission. The peak position (600 nm) of the Mn2+ emission was shifted to longer wavelength compared to that (584 nm) of bulk ZnS:Mn. With the increase of the Mn2+ concentration, the PL of ZnS:Mn was significantly enhanced. The concentration quenching effect was not observed in our experiments. Such PL phenomena were attributed to the absence of Mn2+ pairs in a single ZnS:Mn nanocrystal, considering the nonradiative energy transfer between Mn2+ ions based on the Poisson approximation. (c) 2005 Elsevier B.V. All rights reserved.

Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001)

Thickness effect of immiscible alloy InAlAs as matrix layer on the morphology of InAs nanostructure grown on InAlAs/InP (0 0 1) by solid-source molecular-beam epitaxy has been studied. Experiments demonstrate that InAs nanostructure grown on thin InAlAs matrix layer forms randomly distributed quantum dot, whereas, grown on thick InAlAs matrix layer forms one-dimension ordered mixture of quantum wire and quantum dot. This drastic modification in the nanostructure morphology is attributed to the generation of composition modulation in the immiscible InAlAs alloy with the increase of the layer thickness. (C) 2004 Elsevier B.V. All rights reserved.

Spin Hall effect of excitons with spin-orbit coupling

The center-of-mass motion of a quasi-two-dimensional exciton with spin-orbit coupling (SOC) in the presence of a perpendicular electric field is calculated by perturbation theory. The results indicate that a quasi-two-dimensional exciton with SOC can exhibit the spin Hall effect (SHE), which is similar to two-dimensional electrons and holes. A likely way to establish exciton SHE in experiments and a possible phase transition from dark to bright state driven by SOC are suggested. (c) 2007 American Institute of Physics.

Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots

The influence of GaAS(1 0 0)2 degrees substrate misorientation on the formation and optical properties of InAs quantum dots (QDs) has been studied in compare with dots on exact GaAs(1 0 0) substrates. It is shown that, while QDs on exact substrates have only one dominant size, dots on misoriented substrates are formed in lines with a clear bimodal size distribution. Room temperature photoluminescence measurements show that QDs on misoriented substrates have narrower FWHM, longer emission wavelength and much larger PL intensity relative to those of dots on exact substrates. However, our rapid thermal annealing (RTA) experiments indicate that annealing shows a stronger effect on dots with misoriented substrates by greatly accelerating the degradation of material quality. (c) 2005 Elsevier B.V All rights reserved.

Spatial interference effect of two-photon in femtosecond-pulse pumped spontaneous parametric down-conversion

We have used the transverse correlated properties of the entangled photon pairs generated in the process of spontaneous parametric down-conversion, which is pumped by a femtosecond pulse laser, to perform Young's interference experiment. Unlike the case of a continuous wave laser pump, a broadband pulse laser pump can submerge an interference pattern. In order to obtain a high visibility interference pattern, we used a lens with a tunable focal length and two interference filters to eliminate the effects of the broadband pump laser. It is proven that the process of two-photon direct interference is a post-selection process.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

Thermal processing of strained In0.2Ga0.8As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It is found that rapid thermal annealing can improve the 77K photoluminescence efficiency and electron emission from the active layer, due to the removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of postgrowth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

Electron irradiation and thermal annealing effect on GaAs solar cells

This paper describes the effect of electron irradiation and thermal annealing on LPE AlGaAs/GaAs heterojunction solar cells with various p/n junction depths. The electron irradiation experiments were performed with energy of 3 MeV, fluences ranging from 1 x 10(14) to 5 x 10(15) e/cm(2). The results obtained demonstrate that the irradiation-induced degradation of performances of the cells is mainly in the short circuit current and could be mostly recovered by annealing at 260 degrees C for 30 min. Four electron traps, E-c - 0.24 eV, E-c - 0.41 eV, E-c - 0.51 eV, E-c - 0.59 eV, were found by DLTS analysis, only two shallow levels of which could be removed by the annealing. (C) 1998 Elsevier Science B.V. All rights reserved.

Quantum interference effect in GaAs/AlGaAs double quantum wells

Quantum interference properties of GaAs/AlGaAs symmetric double quantum wells were investigated in a magnetic field parallel to heterointerfaces at 1.9 K. For two types of samples used in our experiments, two GaAs quantum wells with the same width of 60 Angstrom are separated by an AlGaAs barrier layer of 120 Angstrom and 20 degrees thick, respectively. The channels with the length of 2 mu m are defined by alloyed ohmic contacts. The conductance oscillation as a function of the magnetic flux Phi(= B/s) was observed and oscillation period is approximately equal to h/e. The results are in agreement with the theoretical expectation of the Aharonov-Bohm effect. Conductance oscillations are apparent slightly in the samples with a thinner AlGaAs barrier.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.