Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells

Effects of interface roughness and dislocation density on the electroluminescence (EL) intensity of InGaN multiple quantum wells (MQWs) are investigated. It is found that the EL intensity increases with the number of satellite peaks in the x-ray diffraction experiments of InGaN MQW samples. It is indicated that the rough interface will lead the reduction of EL intensity of InGaN MQW samples. It is also found that the EL intensity increases with the decrease of dislocation density which is characterized by the x-ray diffraction measurements. It is suggested that the EL intensity of InGaN MQWs can be improved by decreasing the interface roughness and dislocation density.

National Natural Science Foundation of China 60776047 60506001604760216057600360836003National Basic Research Programme of China 2007CB936700 National High Technology Research and Development Programme of China 2007AA03Z401 Supported by the National Natural Science Foundation of China under Grant Nos 60776047, 60506001, 60476021, 60576003 and 60836003, the National Basic Research Programme of China under Grant No 2007CB936700, and the National High Technology Research and Development Programme of China under Grant No 2007AA03Z401.