The fatigue life estimation of notched specimens under random loading

The LY12-cz aluminium alloy sheet specimens with a central hole were tested under constant amplitude loading, Rayleigh narrow band random loading and a typical fighter broad band random loading. The fatigue life was estimated by means of the nominal stress and the Miner's rule. The stress cycles were distinguished by the rainflow count, range count and peak value count, respectively. The comparison between the estimated results and the test results was made. The effects of random loading sequence and small load cycles on fatigue life were also studied.

Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers

The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps. (c) 2005 Elsevier Ltd. All rights reserved.

光纤光栅滤波的瓦斯传感系统的研究

差分吸收法是进行瓦斯远距离监测的重要方法，根据瓦斯在近红外波段的吸收特性，报道了一种新型的远距离光纤瓦斯传感系统。采用1．3μm超辐射发光二极管为光源，利用光纤布拉格光栅(FBG)优良的窄带滤波特性实现了对瓦斯的差分吸收测量。和传统的干涉滤光片相比，光纤光栅滤波器插入损耗低、制备简单。系统具有全光纤化、结构简单、工作距离远、稳定性好的特点。工作距离10km，测量灵敏度为0．1％，是瓦斯爆炸极限的2％。

一种闭环控制的光纤光栅动态色散补偿仪

利用啁啾光纤光栅的应变调谐特性，将色散补偿的啁啾光纤光栅斜贴于悬臂梁的侧面，通过应力实现啁啾量调整而改变其色散补偿量的大小，同时利用固定在同一悬臂梁的均匀布拉格光栅传感器，实现了闭环自动控制色散补偿量，研制出了一种新型的光纤光栅动态色散补偿仪。该色散补偿仪工作在1550nm波段，典型性能数据为：色散动态补偿范围-1000-1680ps／nm，插入损耗小于1．5dB，动态调谐步进响应时间小于50ms，基本上能满足10Gb／s光纤通信系统中色散动态补偿的要求。

掺镱双包层光纤放大器的放大特性

从掺镱(Yb)光纤放大器的功率传输方程出发,利用有限差分法对小模场面积(SMA)和大模场面积(LMA)掺镱双包层光纤放大器的放大特性进行了分析比较。采用模场直径(MFD)6.5 μm和20 μm的双包层掺镱光纤作为放大器增益介质进行窄线宽连续信号的放大,在915 nm激光抽运下模拟计算了大、小模场面积输出功率随输入信号功率、抽运光功率和光纤长度的变化特性,特别是对于大模场面积光纤放大器,最优光纤长度的选择至关重要;讨论了模场直径不同时的最优抽运功率和光纤长度的选择,得出4 m光纤放大时的临界抽运功率为4

Echolocation signals of the free-ranging Yangtze finless porpoise (Neophocaena phocaenoides asiaeorientialis)

This paper describes the high-frequency echolocation signals from free-ranging Yangtze finless porpoise in the Tian-e-zhou Baiji National Natural Reserve in Hubei Province, China. Signal analysis showed that the Yangtze finless porpoise clicks are typical high-frequency narrow-band (relative width of the frequency spectrum Q=6.6 &PLUSMN; 1.56, N=548) ultrasonic pulses. The peak frequencies of the typical clicks range from 87 to 145 kHz with an average of 125 &PLUSMN; 6.92 kHz. The durations range from 30 to 122 μ s with an average of 68 &PLUSMN; 14.12 μ s. The characteristics of the signals are similar to those of other members of the Phocoenidae as well as the distantly related delphinids, Cephalorhynchus spp. Comparison of these signals to those of the baiji (Lipotes vexillifer), who occupies habitat similar to that of the Yangtze finless porpoise, showed that the peak frequencies of clicks produced by the Yangtze finless porpoise are remarkably higher than those produced by the baiji. Difference in peak frequency between the two species is probably linked to the different size of prefer-red prey fish. Clear double-pulse and multi-pulse reverberation structures of clicks are noticed, and there is no indication of any low-frequency (< 70 kHz) components during the recording period. © 2005 Acoustical Society of America.

Comparison between visual and passive acoustic detection of finless porpoises in the Yangtze river, China

Recently, sonar signals and other sounds produced by cetaceans have been used for acoustic detection of individuals and groups in the wild. However, the detection probability ascertained by concomitant visual survey has not been demonstrated extensively. The finless porpoises (Neophocaena phocaenoides) have narrow band and high-frequency sonar signals, which are distinctive from background noises. Underwater sound monitoring with hydrophones (B&K8103) placed along the sides of a research vessel, concurrent with visual observations was conducted in the Yangtze River from Wuhan to Poyang Lake in 1998 in China. The peak to peak detection threshold was set at 133 dB re 1 mu Pa. With this threshold level, porpoises could be detected reliably within 300 m of the hydrophone. In a total of 774-km cruise, 588 finless porpoises were sighted by visual observation and 44 864 ultrasonic pulses were recorded by the acoustical observation system. The acoustic monitoring system could detect the presence of the finless porpoises 82% of the time. A false alarm in the system occurred with a frequency of 0.9%. The high-frequency acoustical observation is suggested as an effective method for field surveys of small cetaceans, which produce high-frequency sonar signals. (C) 2001 Acoustical Society of America.

Dyakonov-Perel spin relaxation in InSb/AlxIn(1-x)Sb quantum wells

We investigate theoretically the Dyakonov-Perel spin relaxation time by solving the eight-band Kane model and Poisson equation self-consistently. Our results show distinct behavior with the single-band model due to the anomalous spin-orbit interactions in narrow band-gap semiconductors, and agree well with the experiment values reported in recent experiment [K. L. Litvinenko et al., New J. Phys. 8, 49 (2006)]. We find a strong resonant enhancement of the spin relaxation time appears for spin align along [1 (1) over bar0] at a certain electron density at 4 K. This resonant peak is smeared out with increasing the temperature.

Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding

In this work, a novel bonding method using silicate gel as the bonding medium was developed to fabricate an InGaAs narrow-band response resonant cavity enhanced photodetector on a silicon substrate. The bonding was performed at a low temperature of 350 degreesC without any special treatment on bonding surfaces and a Si-based narrow-band response InGaAs photodetector was successfully fabricated, with a quantum efficiency of 34.4% at the resonance wavelength of 1.54 mum, and a full-width at half-maximum of about 27 nm. The photodetector has a linear photoresponse up to 4-mW optical power under 1.5 V or higher reverse bias. The low temperature wafer bonding process demonstrates a great potential in device fabrication.

Optimization of mechanically induced long-period fibre grating transmission spectrum

A new double-layer grating template is designed to reduce the out-of-band loss as much as 1.8dB when the loss of LP03 reaches 10.2 dB. Meanwhile, we propose a method to remove the sidelobes in the transmission spectra by the adjustment of the thickness of pressure plates. The plate-thickness-induced shift of resonant wavelength and the attenuation of loss peak intensity when removing sidelobes can be modified by the fibre distance and contact point on the pressure plates.

Investigation progress on key photonic integration for application in optical communication network

Proceeding from the consideration of the demands from the functional architecture of high speed, high capacity optical communication network, this paper points out that photonic integrated devices, including high speed response laser source, narrow band response photodetector high speed wavelength converter, dense wavelength multi/demultiplexer, low loss high speed response photo-switch and multi-beam coupler are the key components in the system. The, investigation progress in the laboratory will be introduced.

Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature

We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8 x 10(-4). A clear narrow band detection spectrum centered at 4.5 mu m has been observed above room temperature for a device with 200 x 200 mu m(2) square mesa.

Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors

A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.

Long-wavelength Si-based MQW photodetectors for application in optical fiber communication

Si-based SiGe/Si strained MQW long-wavelength photodetectors (PD) with cycle type (Ring Shape) waveguide (CWG) and resonant-cavity-enhanced (RCE) structure have been investigated for the first time for improving the quantum efficiency and response time. The results show that the responsivities are higher than that of conventional PD with a same Ge content reported previously. In addition, RCE-PD has an obvious narrow band response with FWHM less than 6nm.

p-p isotype organic heterojunction and ambipolar field-effect transistors

We realized ambipolar transport behavior in field-effect transistors by using p-p isotype heterojunction films as active layers, which consisted of two p-type semiconductor materials, 2, 2'; 7', 2 ''-terphenanthrenyl (Ph3) and vanadyl-phthalocyanine (VOPc). The ambipolar charge transport was attributed to the interfacial electronic structure of Ph3-VOPc isotype heterojunction, and electrons and holes were accumulated at both sides of the narrow band-gap VOPc and the wide band-gap Ph3, respectively, which were confirmed by the capacitance-voltage relationship of metal-oxide-semiconductor diodes. The accumulation thickness of carriers was also obtained by changing the heterojunction active layer thickness. Furthermore, the results indicate that the device performance is relative to interfacial electronic structures.