Waterborne exposure to PFOS causes disruption of the hypothalamus-pituitary-thyroid axis in zebrafish larvae

Thyroid hormones (THs) play an important role in the normal development and physiological functions in fish. Environmental chemicals may adversely affect thyroid function by disturbing gene transcription. Perfluorooctane sulfonate (PFOS), a persistent compound, is widely distributed in the aquatic environment and wildlife. In the present study, we investigated whether PFOS could disrupt the hypothalamic-pituitary-thyroid (HPT) axis. Zebrafish embryos were exposed to various concentrations of PFOS (0, 100, 200 and 400 mu g L-1) and gene expression patterns were examined 15 d post-fertilization. The expression of several genes in the HIPT system, i.e., corticotropin-releasing factor (CRF), thyroid-stimulating hormone (TSH), sodium/iodide symporter (NIS), thyroglobulin (TG), thyroid peroxidase (TPO), transthyretin (TTR), ioclothyronine deiodinases (Dio1 and Dio2) and thyroid receptor (TR alpha and TR beta), was quantitatively measured using real-time PCR. The gene expression levels of CRF and TSH were significantly up-regulated and down-regulated, respectively, upon exposure to 200 and 400 mu g L-1 PFOS. A significant increase in NIS and Diol gene expression was observed at 200 mu g L-1 PFOS exposure, while TG gene expression was down-regulated at 200 and 400 mu g L-1 PFOS exposure. TTR gene expression was down-regulated in a concentration-dependent manner. Up-regulation and down-regulation of TR alpha and TR beta gene expression, respectively, was observed upon exposure to PFOS. The whole body thyroxine (T-4) content remained unchanged, whereas triiodothyronine (T-3) levels were significantly increased, which could directly reflect disrupted thyroid hormone status after PFOS exposure. The overall results indicated that PFOS exposure could alter gene expression in the HPT axis and that mechanisms of disruption of thyroid status by PFOS could occur at several steps in the synthesis, regulation, and action of thyroid hormones. (C) 2009 Elsevier Ltd. All rights reserved.

Identification and characterization of a MBP isoform specific to hypothalamus in orange-spotted grouper (Epinephelus coioides)

Myelin basic protein (MBP), as a major component of the myelin sheath, has been revealed to play an important role informing and maintaining myelin structure in vertebrate nervous system. In teleost, hypothalamus is an instinctive brain center and plays significant roles in many physiological functions, such as energy metabolism, growth, reproduction, and stress response. In comparison with other MBP identified in vertebrates, a smallest MBP is cloned and identified from the orange-spotted grouper hypothalamic cDNA plasmid library in this study. RT-PCR analysis and Western blot detection indicate that the EcMBP is specific to hypothalamus, and expresses mainly in the tuberal hypothalamus in adult grouper. Immunofluorescence localization suggests that EcMBP should be expressed by oligodendrocytes, and the expressing cells should be concentrated in hypothalamus and the area surrounding hypothalamus, such as NPOpc, VC, DP, NLTm, and NDLI The studies on EcMBP expression pattern and developmental behaviour in the brains of grouper embryos and larvae reveal that the EcMBP-expressing cells are only limited in a defined set of cells on the border of hypothalamus, and suggest that the EcMBP-expressing cells might be a subpopulation of oliaodendrocyte progenitor cells. This study not only identifies a smallest MBP isoform specific to hypothalamus that can be used as a molecular marker of oligodendrocytes in fish, but also provides new insights for MBP evolution and cellular distribution. (C) 2007 Elsevier B.V.. All rights reserved.

EST-based identification of genes expressed in the hypothalamus of male orange-spotted grouper (Epinephelus coioides)

The orange-spotted grouper, Epinephelus coioides, is an important marine aquaculture fish, but its large-scale aquaculture has been hindered by the rarity of natural males because it is a protogynous hermaphroditic fish. Hypothalamus-pituitary-gonad is an important endocrine axis in regulating reproduction and sex differentiation. To reveal the molecular mechanism of hypothalamic physiological functions, we performed he studies on identification of genes expressed in the hypothalamus of male orange-spotted grouper using EST and RT-PCR strategy. A total of 1006 ESTs were sequenced, and 402 (39.96%) clones were identified as known genes and 604 (60.04%) as unknown genes. The 402 clones of known gene products represent transcripts of 18 1 genes. Moreover, the expression patterns of 26 unknown genes were analyzed in various tissues, such as liver, kidney, spleen, fat, heart, muscle, pituitary, hypothalamus, telencephalon, cerebellum, midbrain, medulla oblongata, ovary and testes. Five different categories of expression patterns were observed from them. Several unknown ESTs, such as DN551996, DN551998, DN552082, and DN552070, were detected to be hypothalamus-specific, brains-specific, or hypothalamus and gonad-specific genes. Interestingly, DN551996, not only exhibiting expression differences between ovary and testis, but also showing sex-dependent differences in hypothalamus of grouper, might play significant role in grouper reproduction or sex inversion. Further functional studies on these genes will provide more information on molecule regulation mechanism of sex inversion in groupers. (c) 2006 Elsevier B.V All fights reserved.

Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence

Spatially-resolved electroluminescence (EL) images from solar cells contain information of local current distribution. By theoretical analysis of the EL intensity distribution, the current density distribution under a certain current bias and the sheet resistance can be obtained quantitatively. Two-dimensional numerical simulation of the current density distribution is employed to a GaInP cell, which agrees very well with the experimental results. A reciprocity theorem for current spreading is found and used to interpret the EL images from the viewpoint of current extraction. The optimization of front electrodes is discussed based on the results. (C) 2010 American Institute of Physics. [doi:10.1063/1.3431390]

Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains

We have studied the lateral carrier transfer in a specially designed quantum dot chain structure by means of time-resolved photoluminescence (PL) and polarization PL. The PL decay time increases with temperature, following the T-1/2 law for the typical one-dimensional quantum system. The decay time depends strongly on the emission energy: it decreases as the photon energy increases. Moreover, a strong polarization anisotropy is observed. These results are attributed to the efficient lateral transfer of carriers along the chain direction. (c) 2008 American Institute of Physics.

Distinct two dimensional lateral ordering of self-assembled quantum dots

We report a quantum dot (QD) ensemble structure in which the in-plane arrangements of the dots are in a hexagonal way while the dots are also vertically aligned. Such a distinct lateral ordering of QDs is achieved on a planar GaAs(l 0 0) rather than on a prepatterned substrate by strain-mediated multilayer vertical stacking of the QDs. The analysis indicates that the strain energy of the lateral island-island interaction is minimum for arrangement of the hexagonal ordering. The ordered dots demonstrate strong photoluminescence (PL) emission at room temperature (RT) and the full width at half maximum of PL peak at RT is only 50 meV. (C) 2007 Elsevier B.V. All rights reserved.

EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR

From a single process, GaN layers were laterally overgrown on maskless stripe-patterned (111) silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition. The influence of stress on the behavior of dislocations at the coalescence during growth was observed using transmission electron microscopy (TEM). Improvement of the crystallin equality of the GaN layer was demonstrated by TEM and micro-Raman spectroscopy. Furthermore, the benefits of SOI substrates for GaN growth are also discussed.

Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer

The influences of a high-temperature (HT) AlN interlayer (IL) on the phase separation in crack-free AlGaN grown on GaN have been studied. The depth-dependent cathodoluminescence (CL) spectra indicate a relatively uniform Al distribution in the growth direction, but the monochromatic CL images and the CL spectra obtained by line scan measurements reveal a lateral phase separation in AlGaN grown on relatively thick HT-AlN ILs. Moreover, when increasing the thickness of HT-AlN IL, the domain-like distribution of the AlN mole fraction in AlGaN layers is significantly enhanced through a great reduction of the domain size. The morphology of mesa-like small islands separated by V trenches in the HT-AlN IL, and the grain template formed by the coalescence of these islands during the subsequent AlGaN lateral overgrowth, are attributed to be responsible for the formation of domain-like structures in the AlGaN layer. (c) 2005 American Institute of Physics.

Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix

The authors report the self-organized growth of InAs/InAlAs quantum wires on nominal (001) InP substrate and (001) InP substrates misoriented by 2 degrees, 4 degrees, and 8 degrees towards both [-110] and [110]. The influence of substrate misorientation on the structural and optical properties of these InAs/InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared with that grown on nominal (001) InP substrate, the density of InAs/InAlAs quantum wires grown on misoriented InP(001) substrates is enhanced. A strong lateral composition modulation effect take place in the InAlAs buffer layers grown on misoriented InP substrates with large off-cut angles (4 degrees and 8 degrees), which induces a nucleation template for the first-period InAs quantum wires and greatly improve the size distribution of InAs quantum wires. InAs/InAlAs quantum wires grown on InP (001) substrate 8 degrees off cut towards [-110] show the best size homogeneity and photoluminescence intensity. (c) 2007 American Institute of Physics.

Spin-polarized transport in a lateral two-dimensional diluted magnetic semiconductor electron gas

The transport property of a lateral two-dimensional paramagnetic diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction is highly spin dependent even if the spin polarization of the carrier population is negligibly small. It turns out that this spin-polarized Fermi velocity alone can lead to a strong spin polarization of the current, which is still robust against the energy broadening effect induced by the impurity scattering. (c) 2006 American Institute of Physics.

Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

By means of low temperature photoluminescence and synchrotron radiation X-ray diffraction, existence of stacking faults has been determined in epitaxy lateral overgrowth GaN by metalorganic chemical vapor deposition.

Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD

The lateral epitaxial overgrowth of GaN was carried out by low-pressure metalorganic chemical vapor deposition, and the cross section shape of the stripes was characterized by scanning electron microscopy. Inclined {11-2n} facets (n approximate to 1-2.5) were observed in the initial growth, and they changed gradually into the vertical {11-20} sidewalls in accordance with the process of the lateral overgrowth. A model was proposed utilizing diffusion equations and boundary conditions to simulate the concentration of the Ga species constituent throughout the concentration boundary layer. Solutions to these equations are found using the two-dimensional, finite element method. We suggest that the observed evolution of sidewall facets results from the variation of the local V/III ratio during the process of lateral overgrowth induced by the lateral supply of the Ga species from the SiNx mask regions to the growing GaN regions.

Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) on sapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). It was found that ELO GaN stripes bent towards the SiNx mask in the direction perpendicular to seeding lines. Each side of GaN (0002) peak in DC-XRD rocking curves was a broad peak related with the crystallographic tilt. This broad peak split into two peaks (denoted as A and B), and peak B disappeared gradually when the mask began to be removed by selective etching. Only narrow peak A remained when the SiNx mask was removed completely. A model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: One is the non-uniformity elastic deformation caused by the interphase force between the ELO GaN layer and the SiNx mask. The other is the plastic deformation, which is attributed to the change of the threading dislocations (TDs)-from vertical in the window regions to the lateral in the regions over the mask.

Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates

Epitaxial lateral overgrown (ELO) cubic GaN (c-GaN) on SiO2 patterned GaN/GaAs(0 0 1) substrates by metalorganic vapor phase epitaxy was investigated using transmission electron microscopy and X-ray diffraction (XRD) measurements. The density of stacking faults (SFs) in ELO c-GaN was similar to6 x 10(8) cm(-2), while that in underlying GaN template was similar to5 x 10(9) cm(-2). XRD measurements showed that the full-width at half-maximum of c-GaN (0 0 2) rocking curve decreased from 33 to 17.8 arcmin, indicating the improved crystalline quality of ELO c-GaN. The mechanism of SF reduction in ELO c-GaN was also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.