Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation
| Data(s) |
2005
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|---|---|
| Resumo |
By means of low temperature photoluminescence and synchrotron radiation X-ray diffraction, existence of stacking faults has been determined in epitaxy lateral overgrowth GaN by metalorganic chemical vapor deposition. |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
Chen J; Wang JF; Zhang JC; Wang H; Huang Y; Wang YT; Yang H; Jia QJ .Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation ,HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2005,29(Suppl.S ):37-39 |
| Palavras-Chave | #半导体物理 #GaN #metalorganic chemical vapor deposition (MOCVD) #epitaxy lateral overgrowth #stacking faults #synchrotron radiation X-ray diffraction (XRD) #pole figure #WURTZITE GAN #LUMINESCENCE |
| Tipo |
期刊论文 |
