EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR

From a single process, GaN layers were laterally overgrown on maskless stripe-patterned (111) silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition. The influence of stress on the behavior of dislocations at the coalescence during growth was observed using transmission electron microscopy (TEM). Improvement of the crystallin equality of the GaN layer was demonstrated by TEM and micro-Raman spectroscopy. Furthermore, the benefits of SOI substrates for GaN growth are also discussed.

National Fund for Distinguished Young Scholars 59925205 Solid-state Lighting Engineering Program of Shanghai Governmeny 05d211006-3 The authors would like to thank Dr.Jia-yin Sun for many useful discussions. This work was supported by the National Fund for Distinguished Young Scholars (Grant No.59925205) and the Solid-state Lighting Engineering Program of Shanghai Government (Grant No. 05d211006-3).