Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains


Autoria(s): Wang, BR; Sun, BQ; Ji, Y; Dou, XM; Xu, ZY; Wang, ZM; Salamo, GJ
Data(s)

2008

Resumo

We have studied the lateral carrier transfer in a specially designed quantum dot chain structure by means of time-resolved photoluminescence (PL) and polarization PL. The PL decay time increases with temperature, following the T-1/2 law for the typical one-dimensional quantum system. The decay time depends strongly on the emission energy: it decreases as the photon energy increases. Moreover, a strong polarization anisotropy is observed. These results are attributed to the efficient lateral transfer of carriers along the chain direction. (c) 2008 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/6538

http://www.irgrid.ac.cn/handle/1471x/63007

Idioma(s)

英语

Fonte

Wang, BR ; Sun, BQ ; Ji, Y ; Dou, XM ; Xu, ZY ; Wang, ZM ; Salamo, GJ .Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains ,APPLIED PHYSICS LETTERS,2008 ,93(1): Art. No. 011107

Palavras-Chave #半导体物理 #LOCALIZED STATES #ISLANDS #WIRES #SUPERLATTICES #ORGANIZATION #GAAS(100) #EXCITONS #GROWTH #DECAY #GAAS
Tipo

期刊论文