Why do Chinese alligators (Alligator sinensis) form bellowing choruses: A playback approach

Crocodilians are quite vocal relative to other reptile groups, and the alligators are among the most vocal of the crocodilians. The Chinese alligator, Alligator sinensis, is usually solitary but engages in bellowing choruses in certain waters during the mating season. This paper reports the organization of Chinese alligator's bellowing choruses based upon field observations and playback experiments. Alligators of both genders engaged in the choruses, remaining immobile throughout and inclining toward bellowing synchronously (i.e., starting and finishing at about the same time). The choruses lasted about 10 min with abrupt onset and offset. Moreover, playback experiments revealed that both male and female alligators responded equally to bellowing stimuli from the same and opposite sexes and that none of the tested alligators approached the loudspeaker in spite of playback of male or female stimuli. These suggest that Chinese alligators. may not bellow to compete for or attract mates during the choruses. Instead, when their ecological behaviors, namely, dispersed inhabitation, multi-copulation, restricted mating season, etc., are considered, we hypothesize that they may synchronize bellows to enhance group detectability for assembling individuals into certain waters for subsequent copulations. (C) 2009 Acoustical Society of America. [DOI: 10.1121/1.3203667]

Identification of genome organization in the unusual allotetraploid form of Carassius auratus gibelio

The unusual allotetraploid form with unequal contribution of chromosome sets was discovered from the gynogenetic offspring of Carassius auratus gibelio stimulated by red common carp sperm. In this study, genomic in situ hybridization (GISH) and fluorescent in situ hybridization (FISH) with 45S rDNA probe are used. The GISH results lead to the identification of species-specific chromosomes, which permits to demonstrate the origin and genome organization in the allotetraploid form. Moreover, chromosome localization of 45S rDNA and co-localizations of 45S rDNA and Cyprinus carpio genomic DNA further confirm that one extra 45S rDNA positive chromosome in the allotetraploid form originates from the paternal haploid genome of C carpio, and other 5 45S rDNA-containing chromosomes are from the maternal genome of Carassius auratus gibelio. And, the correlation between 45 rDNA and the nucleolar organizer regions (NORs) is confirmed by silver nitrate staining. The data provide direct experiment evidence that the allotetraploid actually contains three chromosome sets of Carassius auratus gibelio and one chromosome set of C carpio, and will be a useful genetic material for both basic research and breeding practice. (c) 2006 Elsevier B.V. All rights reserved.

Changes in the benthic macroinvertebrates in Xiangxi Bay following dam closure to form the Three Gorges Reservoir

Benthic macroinvertebrates were assessed monthly in Xiangxi Bay of the Three Gorges Reservoir for two years after the initial closure of the dam. Mean total density of macroinvertebrates varied from 275 ind./m(2) during the first year to 5,094 ind./m(2) during the second year, and the community of 50 taxa was overwhelmingly dominated by oligochaetes and chironomids (44 and 48% of the total taxa, respectively). As sediment accumulated in the substrate of the bay, the species composition changed dramatically, with oligochaetes comprising 91.3-99.3% of the total abundance during the second year. The dominant oligochaetes were Limnodrilus hoffmeisteri and Nais inflata. The chironomids Procladius sp., and Polypedilum scalaenum group sp. were similarly abundant in both years.

Growth promotion of vegetative gametophytes of Undaria pinnatifida by blue light

Through an acclimation period of 10 days, compared to white light, the maximal net photosynthetic rates were significantly higher for gametophytes of Undaria pinnatifida cultivated under blue light (400-500 nm), and were lower under red light (600-700 nm). Chlorophyll c and the carotenoid content of gametophytes were similar under blue light and red light but were much lower under white light. The growth rate of female gametophytes under blue light was higher than that under other lights, and the growth rate of male gametophytes showed little variation with respect to blue and white light. Male and female gametophytes were mixed together to form sporophytes under white, blue and red light. After approximately 5 days, 50% gametophytes became fertile under blue and white light, but remained vegetative under red light after 10 days.

First-principles study of native defects in rutile TiO2

Native point defects in the rutile TiO2 are studied via first-principles pseudopotential calculations. Except for the two antisite defects, all the native point defects have low formation energies. Under the Ti-rich growth condition, high concentrations of titanium interstitials and oxygen vacancies would form spontaneously in p-type samples; whereas high concentrations of titanium vacancies would form spontaneously in n-type samples regardless of the oxygen partial pressure. (c) 2007 Elsevier B.V. All rights reserved.

Numerical analysis for four-wave mixing based wavelength conversion of differential phase-shift keying signals

We numerically investigate the main constrains for high efficiency wavelength conversion of differential phase-shift keying (DPSK) signals based on four-wave mixing (FWM) in highly nonlinear fiber (HNLF). Using multi-tone pump phase modulation techniques, high efficiency wavelength conversion of DPSK signals is achieved with the stimulated Brillouin scattering (SBS) effects effectively suppressed. Our analysis shows that there is a compromise between conversion efficiency and converted idler degradation. By optimizing the pump phase modulation configuration, the converted DPSK idler's degradation can be dramatically decreased through balancing SBS suppression and pump phase modulation degradation. Our simulation results also show that these multi-tone pump phase modulation techniques are more appropriate for the future high bit rate systems.

Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy

In2O3 is a promising partner of InN to form InN/In2O3 heterosystems. The valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy. The valence band of In2O3 is found to be 1.47 +/- 0.11 eV below that of InN, and a type-I heterojunction with a conduction band offset (CBO) of 0.49-0.99 eV is found. The accurate determination of the VBO and CBO is important for use of InN/In2O3 based electronic devices.

Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 eV and 2.20 +/- 0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84 +/- 0.2 eV and 0.40 +/- 0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the "intrinsic" valence band offset.

A novel design of grating couplers for efficient broadband coupling between silicon-on-insulator nanophotonic waveguides and fibres

A novel design of out-of-plane grating couplers is proposed for coupling between silicon-on-insulator nanophotonic waveguides and single-mode fibres. The coupler with the first-order diffraction coupling to the optical fibre is actually a second-order reflected grating with two times of period of the first-order grating. To enhance outcoupled power, a back hole is designed to form in the silicon substrate and a kind of metals is placed on the top acting as a reflection layer. The coupler is optimized using coupled-mode- based simulations, showing that, the coupling efficiency to and from tapered optical fibre can be as high as 85% with 1 dB bandwidth about 23nm.

Evolution of InAs nanostructures grown by droplet epitaxy

The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet. When the flux exceeds a critical value, In droplets form, which act as nucleation centers for the formation of InAs rings. (C) 2007 American Institute of Physics.

Measurement of a reciprocal four-port transmission line structure using the 16-term error model

A new method to measure reciprocal four-port structures, using a 16-term error model, is presented. The measurement is based on 5 two-port calibration standards connected to two of the ports, while the network analyzer is connected to the two remaining ports. Least-squares-fit data reduction techniques are used to lower error sensitivity. The effect of connectors is deembedded using closed-form equations. (C) 2007 Wiley Periodicals, Inc.

Extremely low density InAs quantum dots with no wetting layer

Extremely low density InAs quantum dots (QDs) are grown by molecular beam droplet epitaxy, The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs (4x10(6) cm(-2)) are formed by depositing 0.65 monolayers (ML) of indium. This is much less than the critical deposition thickness (1.7 ML), which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence line-width of about 24 meV is insensitive to cryostat temperatures from 10 K to 250 K. All measurements indicate that there is no wetting layer connecting the QDs.

Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods

Nation Natural Science Foundation of China 50672079 60676027 60837001 60776007; National Basic Research Program of China (973 Program) 2007CB613404; China-MOST International Sci & Tech Cooperation and Exchange 2008DFA51230

Mutual passivation of donors and isovalent nitrogen in GaAs

We study the mutual passivation of shallow donor and isovalent N in GaAs. We find that all the donor impurities, Si-Ga, Ge-Ga, S-As, and Se-As, bind to N in GaAsN, which has a large N-induced band-gap reduction relative to GaAs. For a group-IV impurity such as Si, the formation of the nearest-neighbor Si-Ga-N-As defect complex creates a deep donor level below the conduction band minimum (CBM). The coupling between this defect level with the CBM pushes the CBM upwards, thus restoring the GaAs band gap; the lowering of the defect level relative to the isolated Si-Ga shallow donor level is responsible for the increased electrical resistivity. Therefore, Si and N mutually passivate each other's electrical and optical activities in GaAs. For a group-VI shallow donor such as S, the binding between S-As and N-As does not form a direct bond; therefore, no mutual passivation exists in the GaAs(S+N) system.

In-plane propagation of cavity polaritons in a quantum semiconductor microcavity

Considering that the coupling among the heavy-hole exciton, light-hole exciton and the cavity photon can form bipolaritons in a quantum semiconductor microcavity, we calculate the group velocities of the cavity polaritons at different incident angles using the coupling model of three harmonic oscillators. The result indicates that the group velocities of the low and middle branches of the cavity polaritons have extrema, but the group velocities of the high branch increase with the increasing incident angle.