Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods
| Data(s) |
2009
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|---|---|
| Resumo |
Nation Natural Science Foundation of China 50672079 60676027 60837001 60776007; National Basic Research Program of China (973 Program) 2007CB613404; China-MOST International Sci & Tech Cooperation and Exchange 2008DFA51230 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhou B, Pan SW, Chen R, Chen SY, Li C, Lai HK, Yu, JZ, Zhu XF.Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods.SOLID STATE COMMUNICATIONS,2009,149(43-44):1897-1901 |
| Palavras-Chave | #光电子学 #Strain-induced #Electrochemical anodization #Silicon germanium #Heterogeneous nanostructures #POROUS SILICON LAYER #VISIBLE PHOTOLUMINESCENCE #SURFACE-MORPHOLOGY #THIN-FILMS #SI #GERMANIUM #SUPERLATTICES #NANOCRYSTALS #RELAXATION #GROWTH |
| Tipo |
期刊论文 |
