Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy


Autoria(s): Song HP; Yang AL; Wei HY; Guo Y; Zhang B; Zheng GL; Yang SY; Liu XL; Zhu QS; Wang ZG; Yang TY; Wang HH
Data(s)

2009

Resumo

In2O3 is a promising partner of InN to form InN/In2O3 heterosystems. The valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy. The valence band of In2O3 is found to be 1.47 +/- 0.11 eV below that of InN, and a type-I heterojunction with a conduction band offset (CBO) of 0.49-0.99 eV is found. The accurate determination of the VBO and CBO is important for use of InN/In2O3 based electronic devices.

Identificador

http://ir.semi.ac.cn/handle/172111/7147

http://www.irgrid.ac.cn/handle/1471x/63311

Idioma(s)

英语

Fonte

Song HP ; Yang AL ; Wei HY ; Guo Y ; Zhang B ; Zheng GL ; Yang SY ; Liu XL ; Zhu QS ; Wang ZG ; Yang TY ; Wang HH .Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy ,APPLIED PHYSICS LETTERS,2009 ,94(22):Art. No. 222114

Palavras-Chave #半导体材料 #conduction bands #III-V semiconductors #indium compounds #semiconductor heterojunctions #semiconductor materials #valence bands #X-ray photoelectron spectra
Tipo

期刊论文