Primary and secondary threshold intensities of ultraviolet-laser-induced domain nucleation in nearly stoichiometric LiTaO3

The primary and secondary threshold intensities of ultraviolet-laser-induced preferential domain nucleation in nearly stoichiometric LiTaO3 is observed. The primary threshold is the minimum intensity to achieve the instantaneous preferential domain nucleation within the focus by the combined action of irradiation and electric fields. The secondary threshold is the minimum intensity to achieve the memory effect without any irradiation within the original focus. The space charge field created by the photoionization carriers is thought to be responsible for the instantaneous effect. The explanation based on the formation and transformation of extrinsic defect is presented for the memory effect. (c) 2008 American Institute of Physics.

Cooperative downconversion in GdAl3(BO3)(4): RE3+,Yb3+ (RE=Pr, Tb, and Tm)

An efficient near-infrared (NIR) quantum cutting (QC) in GdAl3(BO3)(4):RE3+,Yb3+ (RE=Pr, Tb, and Tm) phosphors has been demonstrated, which involves the conversion of the visible photon into the NIR emission with an optimal quantum efficiency approaching 200%, by exploring the cooperative downconversion mechanism from RE3+ (RE=Pr, Tb, and Tm) excitons to the two activator ions, Yb3+. The development of NIR QC phosphors could open up a new approach in achieving high efficiency silicon-based solar cells by means of downconversion in the visible part of the solar spectrum to similar to 1000 nm photons with a twofold increase in the photon number. (c) 2007 American Institute of Physics.

Cooperative downconversion in Yb3+-RE3+ (RE = Tm or Pr) codoped lanthanum borogermanate glasses

We report on cooperative downconversion in Yb3+-RE3+ (RE = Tm or Pr) codoped lanthanum borogermanate glasses (LBG), which are capable of splitting a visible photon absorbed by Tm3+ or Pr3+ ions into two near-infrared photons. The results indicate that Pr3+-Yb3+ is a more efficient ion couple than Tm3+-Yb3+ in terms of cooperative downconversion. We have obtained a highest quantum yield of 165% and 138% for Pr3+-Yb3+ and Tm3+-Yb3+ codoped LBG glasses under 468 nm excitation, respectively. However, ultraviolet light excitation to the charge transfer band of Yb3+ does not result in quantum splitting as rapid relaxation from the charge transfer band to 4f(13) levels of Yb3+ dominates. (C) 2008 Optical Society of America

Cooperative and charge transfer luminescence in Yb3+ -doped yttrium aluminum perovskite (YAlO3)

YAlO3 (YAP) crystals with different Yb3+ concentration have been grown by Czochralski method and cooperative fluorescence of Yb3+ ions in YAP crystal was studied under 940-nm infrared (IR) LD excitation at room temperature. The Yb concentration dependence of absorption intensity of IR and charge transfer bands exhibit different features. The green emission band in the region of 480-520nm was assigned to the cooperative deexcitation of two Yb3+ ions. The remaining upconverted emission bands containing various sharp peaks associated with impurity ions were observed and discussed. Charge transfer luminescence of heavily doped 20at% Yb:YAP is strongly temperature dependent and no concentration quenching of the charge transfer luminescence was found through the investigation of different Yb levels samples. (c) 2006 Elsevier B.V. All rights reserved.

Cooperative up-conversion luminescence of ytterbium doped yttrium lanthanum oxide transparent ceramic

The up-conversion luminescence of Yb3+-doped yttriurn lanthanum oxide transparent ceramic was investigated. It was ascribed to cooperative luminescence originated from the coupled states of the Yb3+ ion pairs. The proper doping of La2O3 can remove the cooperative luminescence of Yb3+ ion. But excessive La2O3 (at least 10 at.%) the cooperative up-conversion of Yb3+:Y2O3 is obtained again, and the intensity of up-conversion luminescence strengthens with the increase of La2O3 content. (c) 2007 Elsevier B.V. All rights reserved.

Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition

This paper presents a study on the nucleation and initial growth kinetics of InN on GaN, especially their dependence on metalorganic chemical vapour deposition conditions. It is found that the density and size of separated InN nano-scale islands can be adjusted and well controlled by changing the V/III ratio and growth temperature. InN nuclei density increases for several orders of magnitude with decreasing growth temperature between 525 and 375 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters less than 100 nm, whereas at elevated temperatures the InN islands grow larger and become well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. The temperature dependence of InN island density gives two activation energies of InN nucleation behaviour, which is attributed to two different kinetic processes related to In adatom surface diffusion and desorption, respectively.

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.

Nucleation of diamond by pure carbon ion bombardment - a transmission electron microscopy study

A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 degrees C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht [W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993)] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model. (c) 2005 American Institute of Physics.

Diamond nucleation by energetic pure carbon bombardment

Deposition of 1000 eV pure carbon ions onto Si(001) held at 800 degrees C led to direct nucleation of diamond crystallites, as proven by high-resolution transmission electron microscopy and electron energy loss spectroscopy. Molecular dynamic simulations show that diamond nucleation in the absence of hydrogen can occur by precipitation of diamond clusters in a dense amorphous carbon matrix generated by subplantation. Once the diamond clusters are formed, they can grow by thermal annealing consuming carbon atoms from the amorphous matrix. The results are applicable to other materials as well.

Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate

By combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid soul-cc molecular beam epitaxy. Four [011] stripe-patterned substrates different in pitch, depth, and sidewall angle, respectively, are used in this work. The surface morphology obtained by atomic force microscopy shows that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate. The mechanism determining the nucleation position of the InAs dots is discussed. The optical properties of the InAs dots on the patterned substrates are also investigated by photo luminescence. (c) 2005 Elsevier B.V. All rights reserved.