Diamond nucleation by energetic pure carbon bombardment


Autoria(s): Yao Y; Liao MY; Kohler T; Frauenheim T; Zhang RQ; Wang ZG; Lifshitz Y; Lee ST
Data(s)

2005

Resumo

Deposition of 1000 eV pure carbon ions onto Si(001) held at 800 degrees C led to direct nucleation of diamond crystallites, as proven by high-resolution transmission electron microscopy and electron energy loss spectroscopy. Molecular dynamic simulations show that diamond nucleation in the absence of hydrogen can occur by precipitation of diamond clusters in a dense amorphous carbon matrix generated by subplantation. Once the diamond clusters are formed, they can grow by thermal annealing consuming carbon atoms from the amorphous matrix. The results are applicable to other materials as well.

Identificador

http://ir.semi.ac.cn/handle/172111/8608

http://www.irgrid.ac.cn/handle/1471x/63834

Idioma(s)

英语

Fonte

Yao, Y; Liao, MY; Kohler, T; Frauenheim, T; Zhang, RQ; Wang, ZG; Lifshitz, Y; Lee, ST .Diamond nucleation by energetic pure carbon bombardment ,PHYSICAL REVIEW B,JUL 2005,72 (3):Art.No.035402

Palavras-Chave #半导体材料 #ION-BEAM DEPOSITION
Tipo

期刊论文