Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate


Autoria(s): Cui CX; Chen YH; Jin P; Xu B; Ren YY; Zhao C; Wang ZG
Data(s)

2006

Resumo

By combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid soul-cc molecular beam epitaxy. Four [011] stripe-patterned substrates different in pitch, depth, and sidewall angle, respectively, are used in this work. The surface morphology obtained by atomic force microscopy shows that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate. The mechanism determining the nucleation position of the InAs dots is discussed. The optical properties of the InAs dots on the patterned substrates are also investigated by photo luminescence. (c) 2005 Elsevier B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/10880

http://www.irgrid.ac.cn/handle/1471x/64636

Idioma(s)

英语

Fonte

Cui CX; Chen YH; Jin P; Xu B; Ren YY; Zhao C; Wang ZG .Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2006,31(1):43-47

Palavras-Chave #半导体材料 #patterned substrate #GaAs #molecular beam epitaxy #nucleation positions #ASSEMBLED QUANTUM DOTS #MOLECULAR-BEAM EPITAXY #GE ISLANDS #GROWTH #SURFACE #ARRAYS
Tipo

期刊论文