吸收杂质热辐射诱导光学薄膜破坏的热力机制

光学元件的破坏是限制高功率激光系统发展的主要问题,理解光学元件的破坏机制对于高功率激光系统的设计、运行参量选择以及器件技术发展有重要影响。以热辐射模型为基础研究了杂质吸收诱导光学薄膜破坏的热力过程。研究发现薄膜发生初始破坏所需时间很短,脉冲的大部分时间是引起薄膜发生更大的破坏。在考虑吸收杂质发生相变的情况下,计算了吸收杂质汽化对薄膜产生的蒸汽压力,论证了薄膜发生宏观破坏的可能性。此模型能很好地解释光学薄膜的平底坑破坏形貌。

Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors

TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.

植物克隆性在生态修复中的意义：鄂尔多斯高原赖草和沙鞭的案例

克隆植物通过克隆生长能够很好的适应异质性的生境。在进行植被修复的研究和实践中，注意发扬或引进具有重要资源价值的克隆植物是重要的恢复生态学思考和途径。本文主要应用实验生态学的方法，通过对鄂尔多斯高原不同克隆植物克隆性及其对水分条件的反应的比较，以及对不同克隆植物抵抗风蚀和风蚀坑修复的能力的比较，探讨克隆植物对干旱(水分条件)及风蚀的适应机制，从而对克隆植物的克隆性在生态修复中的意义进行了研究和阐述。 　　对不同水分条件下赖草(Leymus secalinus (Georgi.) Tzvel)和沙鞭(Psammochloa villosa (Trin.) Bor)克隆性的研究表明：克隆生长开始时间和克隆生长率二者与克隆植物新产生子代分株数量之间存在着显著的相关关系，说明克隆生长开始时间和克隆生长率能够作为准确评价克隆性的指标;相对于沙鞭来说，赖草具有更强的克隆性，表现在它的早的克隆生长开始时间、高的克隆生长率，并且这种差异可以被水分条件所修饰;植物的克隆性对水分条件具有较强的可塑性，这种可塑性具有种间差异。相对赖草来说，沙鞭能更好地适应干旱条件。 　　克隆植物植株有两种繁殖体类型，分株和种子。本研究对分别从分株来源和种子来源的赖草与沙鞭植株在不同水分条件下生长状况及克隆性进行了比较，结果表明：水分的增加，有利于赖草的生长;而对于沙鞭来说，水分抑制了分株来源的沙鞭植株的生长，但对种子来源的沙鞭植株的生长有着促进作用。克隆植物的克隆性在水分条件较好的情况下能够得到更好的表达。不同来源有赖草植株之间克隆性没有明显差异;对于沙鞭来说，分株来源的沙鞭植株克隆性受水分条件的影响不明显，但水分有利于种子来源的沙鞭植株克隆性的表达。说明不同繁殖体类型来源的植株，克隆性对水分的反应格局存在着一定的差异。分株来源的沙鞭植株对干旱条件具有比种子来源的植株更强的适应性。 　　通过对沙鞭和赖草实生幼苗在不同风蚀程度下生长状况的比较，结果表明二者幼苗在抵抗风蚀时采取不同的策略。风蚀显著降低了赖草产生新生分株的能力，而对沙鞭潜在分株数没有显著影响。赖草实生幼苗生长状况在轻中度风蚀条件下与对照处理没有显著差异，说明对风蚀具有较强的抵抗能力，其策略可能是风险分担，赖草具有的强克隆性使之能快速产生新的子代分株，从而分担了风蚀造成的风险;沙鞭实生幼苗的生长状况受风蚀影响较为明显，但风蚀没有能对其产生潜在分株(芽)的能力产生显著的影响，说明沙鞭实生幼苗对风蚀可能采取的是通过芽的产生贮存资源、逃避风险、等待机会的策略。赖草和沙鞭对风蚀所采用的不同适应策略，可能会影响到二者在自然条件下种群更新方式的选择。 　　为了探讨克隆植物对风蚀坑修复能力及机理，研究了沙鞭和赖草对种群内风蚀坑的修复过程，结果表明：合轴型克隆草本赖草具有比单轴型克隆草本沙鞭更强的植被修复能力，能够在风蚀坑中产生更多的新生分株，这主要归功于赖草的强克隆性，而赖草间隔子的可塑性反应也有利于将更多的新生分株放置在风蚀坑内。二者进行植被修复的机理有所差异，赖草对风蚀坑的修复主要是通过周围根茎扩展进入坑中，然后产生新的分株;而沙鞭不仅可以通过周边根茎进入产生新的分株，同时也可以通过刺激深层休眠芽来产生新的分株。二者都能在风蚀坑中产生比自然条件下更多的分株，以更好利用风蚀坑中充足的光照;但同时这些分株的生长也受到风蚀坑中养分条件的制约，生物量和生长状况都不如自然条件下形成的分株。 　　 　　

Studies on polysaccharides from three edible species of Nostoc (Cyanobacteria) with different colony morphologies: Comparison of monosaccharide compositions and viscosities of polysaccharides from field colonies and suspension cultures

Hot water-soluble polysaccharides woe extracted from field colonies and suspension cultures of Nostoc commune Vaucher, Nostoc flagelliforme Berkeley et Curtis, and Nostoc sphaeroides Kutzing. Excreted extracellular polymeric substances (EPS) were isolated from the media in which the suspension cultures were grown. The main monosaccharides of the field colony polysaccharides from the three species were glucose, xylose, and galactose, with an approximate ratio of 2:1:1. Mannose was also present, but the levels varied among the species, and arabinose appeared only in N. flagelliforme. The compositions of the cellular polysaccharides and EPS from suspension cultures were more complicated than those of the field samples and varied among the different species. The polysaccharides from the cultures of N. flagelliforme had a relatively simple composition consisting of mannose, galactose, glucose, and glucuronic acid, but no xylose, as was found in the field colony polysaccharides. The polysaccharides from cultures of N. sphaeroides contained glucose (the major component), rhamnose, fucose, xylose, mannose, and galactose. These same sugars were present in the polysaccharides from cultures of N. commune, with xylose as the major component. Combined nitrogen in the media had no qualitative influence on the compositions of the cellular polysaccharides but affected those of the EPS of N. commune and N. flagelliforme. The EPS of N. sphaeroides had a very low fetal carbohydrate content and thus was not considered to be polysaccharide in nature. The field colony polysaccharides could be separated by anion exchange chromatography into neutral and acidic fractions having similar sugar compositions. Preliminary linkage analysis showed that 1) xylose, glucose, and galactose were 1-->4 linked, 2) mannose, galactose, and xylose occurred as terminal residues, and 3) branch points occurred in glucose as 1-->3,4 and 1-->3,6 linkages and in xylose as a 1-->3,4 linkage. The polymer preparations from field colonies had higher kinematic viscosities than those from corresponding suspension cultures. The high viscosities of the polymers suggested that they might DE suitable for industrial uses.

Study on the perfection of in situ P-injection synthesis LEC-InP single crystals

Undoped, S-doped and Fe-doped InP crystals with diameter up to 4-inch have been pulled in drop 10 0 drop -direction under P-rich condition by a rapid P-injection in situ synthesis liquid encapsulated Czochralski (LEC) method. High speed photoluminescence mapping, etch-pit density (EPD) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. Dislocations and electrical homogeneity of these samples are investigated and compared. By controlling the thermal field and the solid-liquid interface shape, 4-inch low-EPD InP single crystals have been successfully grown by the rapid P-injection synthesis LEC method. The EPD across the wafer of the ingots is less than 5 x 10(4) cm(-2). Cluster defects with a pore center are observed in the P-rich LEC grown InP ingots. These defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. The uniformity of the PL intensity across the wafer is influenced by these defects. (C) 2004 Elsevier B.V. All rights reserved.

Cathodoluminescence and Raman research of V-shape inverted pyramid in HVPE grown GaN film

Thick GaN films with high quality have been grown on (0001) sapphire substrate in a home-made vertical HVPE reactor. Micron-size hexagonal pits with inverted pyramid shape appear on the film surface, which have six triangular {10-11} facets. These I {10-11} facets show strong luminescence emission and are characteristic of doped n-type materials. Broad red emission is suppressed in {10-11} facets and is only found at the flat region out of the pit, which is related with the decreasing defects on {10-11} facets. Low CL emission intensity is observed at the apex of V-shape pits due to the enhanced nonradiative recombination. Raman spectra show that there are higher carrier concentration and low strain in the pit in comparison to the flat region out of the pit. The strain relaxation may be the main mechanism of the V-shape pits formation on the GaN film surface. (c) 2006 Elsevier B.V. All rights reserved.

Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE

A 275 mu m thick GaN layer was directly grown on the SiO2-prepatterned sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The variation of optical and structure characteristics were microscopically identified using spatially resolved cathodeluminescence and micro-Raman spectroscopy in a cross section of the thick film. The D X-0(A) line with the FWHM of 5.1 meV and etch- pit density of 9 x 10(6) cm(-2) illustrated high crystalline quality of the thick GaN epitaxial layer. Optically active regions appeared above the SiO2 masks and disappeared abruptly due to the tapered inversion domains at 210 - 230 mu m thickness. The crystalline quality was improved by increasing the thickness of the GaN/sapphire interface, but the region with a distance of 2 mu m from the top surface revealed relatively low quality due to degenerate surface reconstruction by residual gas reaction. The x-ray rocking curve for the symmetric (0 0 2) and asymmetric (1 0 2) reflections also showed good quality and a small wing tilt of the epitaxial lateral overgrowth (ELO) GaN.

In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.

High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity

A semi-insulating (SI) GaAs single crystal was recently grown in a retrievable satellite. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2) This result indicates a quite good homogenity of the EPD which is much better than the ground-grown crystals. A similar better homogenity of the stoichiometry i.e., the [As]/([As] + [Ga]) ratio has been found in the space-grown SI-GaAs single crystal studied nondestructively using a new mapping method based upon X-ray Bond diffraction. The average stoichiometry in the space-grown crystal is 0.50007 with mean-square deviation of 6x10(-6), while the average stoichiometry in ground-grown SI-GaAs crystal is more than 0.50010. (C) 1998 Elsevier Science B.V. All rights reserved.

The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105

Thick GaN films were grown on sapphire in a home-made vertical HVPE reactor. Effect of nucleation treatments on the properties of GaN films was investigated, including the nitridation of sapphire, low temperature GaN buffer and MOCVD-template. Various material characterization techniques, including AFM, SEM, XRD, CL and PL have been used to assess these GaN epitaxial films. It was found that the surface of sapphire after high temperature nitridation was flat and showed high density nucleation centers. In addition, smooth Ga-polarity surface of epitaxial layer can be obtained on the nitridation sapphire placed in air for several days due to polarity inversion. This may be caused by the atoms re-arrangement because of oxidation. The roughness of N-polarity film was caused by the huge inverted taper domains, which can penetrate up to the surface. The low temperature GaN buffer gown at 650 degrees C is favorable for subsequent epitaxial film, which had narrow FWHM of 307 arcsec. The epitaxial growth on MOCVD-template directly came into quasi-2D growth mode due to enough nucleation centers, and high quality GaN films were acquired with the values of the FWHM of 141 arcsec for (002) reflections. After etching in boiled KOH, that the total etch-pit density was only 5 x 106 cm(-2) illustrated high quality of the thick film on template. The photoluminescence spectrum of GaN film on the MOCVD-template showed the narrowest line-width of the band edge emission in comparison with other two growth modes.

Surface morphology evolution of strained InAs/GaAs(331)a films

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

基于一阶迁移系统的限界模型检测工具实现

基于布尔可满足性(SAT)的限界模型检测是一种高效的模型检测方法，它具有快速查错，反例最小化等特点，已经成为学术界和工业界关注的热点。近些年出现了很多集成限界模型检测算法的验证工具，如ITC-IRST、卡内基梅隆大学(CMU)等多家科研机构联合开发的NuSMV工具；加利福尼亚大学伯克莱分校(UC Berkeley)、科罗拉多大学博尔德分校(CU Boulder)联合开发的VIS工具等。因此目前对于限界模型检测方法的研究和相关工具的设计与开发具有重要而广泛的意义。在进行限界模型检测的建模过程中，不同的工具采用了自定义的建模语言。如经典工具SPIN采用的建模语言是Promela语言，NuSMV采用的是自定义的NuSMV语言。随着系统验证规模的不断增大，建模语言的特点将会直接影响到建模的效率。例如采用NuSMV语言去建立一个网络通信协议模型会显得比较复杂和耗时，应用NuSMV语言去描述一个简单的数据链路层网络协议ABP协议(Alternating Bit Protocol)就不如采用Promela语言去描述显得直观和自然。 为了简化在限界模型检测过程中模型的建立过程，本文给出了一种采用基于一阶迁移系统语言描述的模型建立方法，并在一阶迁移系统语言中实现了通道的功能，从而增强了描述能力。在此基础上完成了一个以基于插值和k步归纳限界验证算法为核心的模型检测工具(BMCF)。最后利用该工具对常见的互斥协议，简单数据传输协议的性质进行了分析与验证。结果表明，利用该工具对系统进行建模具有方便直观的特点，并借助实现的验证算法能高效的检验安全性质的正确性，如果性质不成立工具会给出反例提示。

安达市碱性草地土壤颗粒的分维特征

运用土壤颗粒质量分形模型计算松嫩平原低平地安达试区植被分布区和碱斑区样点土壤颗粒的分形维数,并建立分形维数与土壤颗粒不同粒级间的回归关系,以探讨土地碱化后土壤粒径分布的分形特征及其与土壤物理性状的关系。结果表明:安达试区土壤颗粒分形维数较高,平均分别仅有48.7×10-5cm/s(Pit A)和4.30×10-6cm/s(Pit B),反映了该区土壤细颗粒含量高、土壤大孔隙数量少、土壤饱和导水率低的特征;土壤颗粒分形维数与黏粒含量呈对数正相关关系,而与粉粒和砂粒含量相关性不显著,说明在安达试区,影响土壤颗粒分形维数的主要因素是黏粒含量;羊草地土壤颗粒分形维数在土壤垂直剖面上的变异较大,说明植被生长促进了土壤质地的变异;碱斑地土壤颗粒分形维数明显大于羊草地,细颗粒含量高,饱和导水率低,说明碱斑的形成恶化了土壤物理性质;土壤颗粒分形维数可以反映安达市土壤物理性质的好坏,能作为土壤退化和生态环境恶化的评价指标。研究结果可为安达市以及松嫩平原盐碱地生态环境的修复和治理提供科学依据。

Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching

The dislocations and precipitates in SI-GaAs single crystals are revealed by ultrasonic-aided Abrahams-Buiocchi etching (USAB), and the etch pits are observed and measured by metalloscope and scanning electron microscope (SEM) equipped with an energy dispersive X-ray spectrometer (EDS), respectively. The size of etch pit revealed by USAB etching is about 1 order of magnitude smaller than that revealed by molten KOH. The amount of arsenic atoms in the dislocation-dense zone is about 1% larger than that in an adjacent dislocation-free zone measured by EDS attached to SEM, which indicates that the excess arsenic atoms adjacent to the dislocation-dense zone are attracted to the dislocations and precipitate there due to the deformation energy.