RESPONSES OF Elodea nuttallii AND Ceratophyllum demersum TO HIGH TEMPERATURE

There were large losses of exotic species Elodea nuttallii during summer in eutrophic lakes of the middle and lower reaches of the Yanatze River, China. To investigate the main causes, the heat tolerance of E. nuttallii was studied and compared with that of native species Ceratopkyllum demersum by using an aquaria system in the laboratory. Under 4500 lx light intensity and 12-h L/12-h D cycle, E. nuttallii cultured in 1/5 Hoaglands solution at 39 degrees C showed a positive growth rate during the first 15 days, and the growth rate was higher than that at 35 degrees C. But after 15 days, the growth rates became negative for those cultured both at 39 and 35 degrees C. However, the growth rate was positive for more than 20 days for those cultured at 25 degrees C. Under the same conditions, the growth rate, productivity and chlorophyll content of E. nuttallii were significantly higher than that of C. demersum. Heat tolerance of E. nuttallii was also stronger than that of C. demersum. The optimal temperature for the growth of the two plants depended on the experimental period: both plants grew at an optimal rate at higher temperature if the experimental period was short; nevertheless the plants achieved optimal growth at a lower temperature if the experiment was conducted for a longer period. At the same light intensity, the heat tolerance of C. demersum in tap water with sediment was markedly stronger than that of E. nuttallii at 39 degrees C. Average growth rate of C. demersum was 4.5 times higher than that of E. nuttallii within 25 days. The positive growth period lasted for less than 25 days for E. nuttallii and for more than 25 days for C. demersum. When they were cultured in 1/5 Hoaglands solution and in tap water with sediment, the growth rate of C. demersum increased from 0.4 to 79.4 mg/d.g fresh weight (FW) within 20 days. E. nuttallii increased from 8.3 to 24.4 mg/d-g FW within 20 days. Both grew better in tap water with sediment than in 1/5 Hoaglands solution. The results demonstrated that the nutritional status of the water other than the high temperature affected the heat tolerance of E. nuttallii during summer. E. nuttallii has great ecological safe risk in China.

A Bragg-mirror-based semiconductor saturable absorption mirror at 800 nm with low temperature and surface state hybrid absorber

We present a novel 800-nm Bragg-mirror-based semiconductor saturable absorption mirror with low temperature and surface state hybrid absorber, with which we can realize the passive soliton mode locking of a Ti:sapphire laser pumped by 532-nm green laser which produces pulses as short as 37 fs. The reflection bandwidth of the mirror is 30 nm and the pulse frequency is 107 MHz. The average output power is 1.1 W at the pump power of 7.6 W.

Self-starting passively mode-locking all-solid-state laser with GaAs absorber grown at low temperature

We realize a stable self-starting passively mode-locking all-solid-state laser by using novel GaAs mirrors as the absorber and output coupler. The GaAs mirror is grown by the technology of metal organic chemical vapour deposition at low temperature. With such an absorber as the output coupler in the laser resonator, laser pulses with duration of 42ps were generated at a repetition rate of 400MHz, corresponding to the average power of 590mW.

Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature

We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.

Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature

GaAs absorber was grown at low temperature (550degreesC) by metal organic chemical vapour deposition (MOCVD) and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3mus. The modelocking threshold is 4.27W and the highest average output pulse power is 290 mW. The modelocking frequency is 12 MHz.

Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature

Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of Q- switched and mode- locked ( QML) 1064 nm operation was achieved in a very simple compact plane- concave cavity Nd: YVO4 laser, it was so short that the pulses can be used as Q- switching pulses. The maximal average output power is 808 mW with the repetition rate of 25 kHz, and the corresponding peak power and energy of a single Q- switched pulse was 2.94 kW and 32.3 mu J, respectively. The mode- locked pulse trains inside the Q- switched pulse envelope had a repetition rate of 800 MHz.

A bidirectionall diode-pumped, passively mode-locked Nd : YVO4 ring laser with a low-temperature-grown semiconductor saturable absorber mirror

We report the operation of a bidirectional picosecond pulsed ring Nd:YVO4 laser based on a low-temperature-grown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5 MHz, pulse duration of 81 ps, power of 2 x 200 mW.

Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser

A passively Q-switched and mode-locked diode-pumped Nd:GdVO4 laser was demonstrated using a low-temperature-grown GaAs wafer (LT-GaAs) as an intracavity saturable absorber. The maximal Q-switched mode-locked average output power was 750 mW with the Q-switched envelop having a repetition rate of 167 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 790 MHz.

Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber

Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 degrees C by metal organic vapor phase epitaxy on a semi-insular GaAs substrate. With such an absorber as well as an output coupler we obtain Q-switched mode-locked (QML) 1064 nm Nd:GdVO4 laser pumped by diode laser with high repetition rate, formed with a simple flat-flat cavity. The repetition rate of the Q-switched envelope increased from 100 to 660 kHz as the pump power increased from 2.28 to 7.29 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of similar to 1.36 GHz. A maximum average output power of 953 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally. (C) 2005 Elsevier B.V. All rights reserved.

Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power

Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical power is demonstrated. Double X-ray diffraction has been used to investigate the quality of the epitaxial material. The compositional gradients and the interface quality are controlled effectively. The corrected average power of per facet about 17 mW and temperature tuning coefficient of the gain peak about 0.91 nm/K from 83 K to 140 K is achieved in pulse operation. Best value of threshold current density is less than 3.0 kA/cm(2) at 83 K. (C) 2005 Elsevier Ltd. All rights reserved.

Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy

Atomic force microscopy and photoluminescence spectroscopy (PL) has been used to study asymmetric bilayer InAs quantum dot (QD) structures grow by molecular-beam epitaxy on GaAs (001) substrates. The two InAs layers were separated by a 7-nm-thick GaAs spacer layer and were grown at different substrate temperature. We took advantage of the intrinsic nonuniformity of the molecular beams to grow the seed layer with an average InAs coverage of 2.0 ML. Then the seed layer thickness could be divided into three areas: below, around and above the critical thickness of the 2D-3D transition along the 11101 direction of the substrate. Correspondingly, the nucleation mechanisms of the upper InAs layer (UIL) could be also divided into three areas: temperature-controlled, competition between temperature-controlled and strain-induced, and strain-induced (template-controlled) nucleation. Small quantum dots (QDs) with a large density around 5 x 10(10) cm(-2) are found in the temperature-controlled nucleation area. The QD size distributions undergo a bimodal to a unimodal transition with decreasing QD densities in the strain-induced nucleation area, where the QD densities vary following that of the seed layer (templating effect). The optimum QD density with the UIL thickness fixed at 2.4 ML is shown to be around 1.5 x 10(10) cm(-2), for which the QD size distribution is unimodal and PL emission peaks at the longest wavelength. The QDs in the in-between area exhibit a broad size distribution with small QDs and strain-induced large QDs coexisting.

800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser

A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror with low temperature method and surface state method combined absorber is presented.With which passive Kerr lens mode locking of Ti∶Al2O3 laser pumped by argon ion laser is realized,which produces pulses as short as 40fs.The spectrum bandwidth is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.

Temperature effects of CsI(Tl) crystal detector with APD readout

The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/degrees C in the region from -2 degrees C to 8 degrees C, and by 0.33%/degrees C in the region from 8 degrees C to 25 degrees C, while the gain of the tested APD decreases by -3.68%/degrees C (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV gamma ray from Cs-137 radiation source.

Ultrafast dynamics of dye molecules in solution as a function of temperature

Femtosecond time-resolved studies using fluorescence depletion spectroscopy were performed on Rhodamine 700 in acetone solution and on Oxazine 750 in acetone and formamide solutions at different temperatures. The experimental curves that include both fast and slow processes have been fitted using a biexponential function. Time constants of the fast process, which corresponds to the intramolecular vibrational redistribution (IVR) of solute molecules, range from 300 to 420 fs and increase linearly as the temperature of the environment decreases. The difference of the average vibrational energy of solute molecules in the ground state at different temperatures is a possible reason that induces this IVR time-constant temperature dependence. However, the time constants of the slow process, which corresponds to the energy transfer from vibrational hot solute molecules to the surroundings occurred on a time scale of 1-50 ps, changed dramatically at lower temperature, nonlinearly increasing with the decrease of temperature. Because of the C-H...O hydrogen-bond between acetone molecules, it is more reasonable that acetone molecules start to be associated, which can influence the energy transfer between dye molecules and acetone molecules efficiently, even at temperatures far over the freezing point.

Room temperature preparation of carbon supported Pt-Ru catalysts

A carbon supported Pt-Ru (Pt-Ru/C-T) catalyst can be prepared by a chemical reduction method in an aqueous solution with tetrahydrofuran (THF) at room temperature. The Pt-Ru particles possess high alloying, small average size and a low relative crystallinity. The electrocatalytic activity of the prepared Pt-Ru/C catalyst for methanol oxidation is much higher than that of commercial Pt-Ru/C (Pt-Ru/C-E) catalysts which have a similar average size and relative crystallinity, but the alloying extent is much lower than that in our Pt-Ru/C-T catalyst. The results illustrate that the alloying extent of Pt and Ru in the Pt-Ru/C catalyst plays an important role in the electrocatalytic activity of the Pt-Ru/C catalyst for methanol oxidation.