Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power


Autoria(s): Liu JQ; Liu FQ; Lu XZ; Guo Y; Wang ZG
Data(s)

2005

Resumo

Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical power is demonstrated. Double X-ray diffraction has been used to investigate the quality of the epitaxial material. The compositional gradients and the interface quality are controlled effectively. The corrected average power of per facet about 17 mW and temperature tuning coefficient of the gain peak about 0.91 nm/K from 83 K to 140 K is achieved in pulse operation. Best value of threshold current density is less than 3.0 kA/cm(2) at 83 K. (C) 2005 Elsevier Ltd. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/10908

http://www.irgrid.ac.cn/handle/1471x/64650

Idioma(s)

英语

Fonte

Liu JQ; Liu FQ; Lu XZ; Guo Y; Wang ZG .Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power ,SOLID-STATE ELECTRONICS,2005,49(12):1961-1964

Palavras-Chave #半导体材料 #X-ray diffraction #molecular beam epitaxy #semiconducting gallium compounds #quantum-cascade lasers (QCLs) #UNIPOLAR SEMICONDUCTOR-LASERS #MU-M #OPERATION
Tipo

期刊论文