SPECIES DIVERSITY DYNAMICS OF FRAGMENTED TROPICAL RAINFORESTS IN THE LOWER-LANCANG/ UPPER-MEKONG RIVER BASIN

　在澜沧江下游/ 湄公河上游的滇南西双版纳地区,通过样方法比较了热带雨林的连片与3 个小片断的物 种多样性变化趋势。与连续森林比较,片断热带雨林的植物物种丰富度和物种多样性指数都比较低,而且有相当低 比例的大高位芽、中高位芽和附生等生活型植物,而藤本、小高位芽和矮高位芽等生活型植物的比例则较高;泛热 带、热带亚洲至热带非洲的区系成分比例较高,而当地成分则减少;群落的上层树木比下层树木更加稳定。同样,动 物的物种多样性指数和均衡度在片断热带雨林中都较低,与其密切相关的是片断热带雨林的环境质量,而不是片 断的大小。此外,也探讨了片断热带雨林物种变化与森林小气候的关系,阐明了由凉湿向干暖转化的“林内效应"是 其物种变化的重要原因之一。

复合垂直流人工湿地氧化还原特征及不同功能区净化作用研究

研究了复合垂直流人工湿地系统氧化还原电位(Eh)的时空变化规律及不同功能区中污染物的净化效果。结果表明:湿地系统下行流池表层、两池底层、上行流池表层Eh的变化范围分别为402~585、-87~-130、308~432mV,沿水流方向依次形成了好氧A区/缺氧、厌氧区/好氧B区3个功能区。好氧A区是污染物去除的主要区域,BOD5、CODCr、NH4+-N的去除率分别为43.0%、48.4%、54.1%,特别是NH4+-N去除率占总去除率的79%;缺氧、厌氧区主要是进行反硝化反应和有机物的厌氧分解;好氧B区则主

金鱼DEAD-box家族基因p68和p110在配子发生中的表达特征

利用组织原位杂交技术,以地高辛标记的反义RNA为探针,检测了金鱼(Carassius auratus)DEAD-box家族基因p68和p110在卵子发生及精子发生中的表达分布特点。结果表明:在金鱼配子发生中,p68基因在各个时期的卵母细胞均有表达,Ⅰ、Ⅱ期卵母细胞中的表达水平较Ⅲ、Ⅳ期卵母细胞中更高。p68基因的表达只限于精原细胞和初级精母细胞中。p110基因在金鱼精子发生各阶段持续表达,其中精原细胞和初级精母细胞中表达水平较高;在卵子发生中,Ⅰ期卵母细胞中没有p110 RNA阳性信号,Ⅱ期卵母细胞中信号

东湖放养鱼类时空分布的水声学研究

2 0 0 0年 ,用鱼探仪逐月对东湖鱼类的空间分布进行探测的结果表明 :东湖鱼类主要分布在 1 5m以下的水层 ,1 5m以上与 1 5m以下水层的鱼类密度分布存在显著差异。此外 ,东湖中不同区域的鱼类密度分布亦有显著性差异。统计分析显示 ,这种水平分布差异与水深、离岸距离等因素没有明显的相关 ,可能主要由群聚行为引起。由不同月份群聚程度不一致 ,推测水温的变化可能会影响鱼类的群聚行为。污水排放对鱼类空间分布也可能有一定的影响。

中华鳖心组织成纤维细胞系的建立及特性

以中华鳖心组织为材料 ,用含 10 %胎牛血清的 TC199培养基 ,于 2 5℃条件下 ,经 14个月传代培养 6 0余次 ,获得一个能稳定生长、以成纤维样细胞为主的细胞系 ,称之为 TSH(Trionyx sinesis heart)细胞系。分别对其原代和传代细胞的染色体数目、不同温度下细胞的生长曲线及原代和传代细胞的显微形态进行了测定和比较。结果表明 ,细胞在2 5℃条件下生长速度最快 ;原代细胞约有 6 4%的染色体为 2 n=6 6 ,而传代细胞为四倍体的有 6 2 %。初步估计的细胞周期为 2

Experimental and field studies of Mesocyclops notius (Copepoda : Cyclopoida) from a subtropical Chinese lake, Lake Donghu

This paper reports experimental and field studies on the cyclopoid Mesocyclops notius from subtropical Lake Donghu close to the Yangtze river. Mesocyclops notius, a dominant crustacean Zooplankter throughout tropical Australia, was previously considered to be endemic to Australia, but recently, Mesocyclops leuckarti in Lake Donghu was re-identified as M. notius. Laboratory culture experiments were conducted to reveal the effect of temperature (15, 20, 25 and 30 degreesC) on the development, growth and reproduction of M. notius. Temperature was inversely related to development times of eggs, nauplii and copepodites, body length and physiological longevity of adults, and brood size. Body length and physiological longevity of females were greater than those of males at the same temperature. No reproduction took place at 15 degreesC. Production and seasonal cycles of M. notius during 1980-1982 were studied at two sampling stations of Lake Donghu. At the mid-lake station, the annual production and production/biomass (P/B) ratio of M. notius varied between 6.0 and 18.0 g dry wt m(-2) year(-1) and 74.6 and 95.5, respectively. Mesocyclops notius reached their highest density peaks in the warm months (July-October), with a maximum density of 1256 individuals l(-1) at a littoral site. No reproduction and recruitment by AL notius took place during the cold months (December March) when the temperature of the lake water was < 15 degreesC. Mesocyclops notius were more abundant at a littoral station than at a pelagic station, possibly due to different food availability. The higher male:female sex ratio of M. notius at the littoral station was most likely caused by size-selective fish predation on larger females.

Two-port InGaAsP/InP square resonator microlasers

Two-port InGaAsP/InP square resonator microlasers with a side length of 20 mm have been fabricated by the planar technology process, which have two 1 mu m-wide output ports connected to the vertices of the square resonator. Continuous-wave electrically injected microsquare lasers have been realised at room temperature with mode Q-factors of 1.75 x 10(4) at the threshold current.

High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers. Stripe width and cavity length of the laser were 1.8 and 300 pm, respectively. After being cavity coated. and transistor outline (TO) packaged, the lasers showed high performance in practice. The threshold current was about 13 +/- 4 mA, the operation current and the lasing spectrum were about 58 6 mA and 1689 +/- 6 nm at 6-mW output power, respectively. Moreover, the maximum output power of the lasers was above 20 mW.

Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts

A new measurement method for GaN films and their Schottky contacts is reported in this paper. Instead of the fabrication of Ohmic contacts, this measurement is based on a special back-to-back Schottky diode that has a rectifying character. A mathematical model indicates that the electronic parameters of the materials can be deduced from the device's I-V data. In the experiment of an unintentionally doped n-type GaN layer with a residual carrier density 7 x 10(16) cm(-3), the analysis by the new method gives the layer's sheet resistance rho(s) = 497 Omega, the electron mobility mu(n) =, 613 cm(2) V-1 s(-1) and the ideality factor of the Ni/Au-GaN Schottky contacts n = 2.5, which are close to the data obtained by the traditional measurements: rho(s) = 505 Omega, mu(n) = 585 cm(2) V-1 s(-1) and n = 3.0. The method reported can be adopted not only for GaN films but also for other semiconductor materials, especially in the cases where Ohmic contacts of high quality are hard to make or their fabricating process affects the film's character.

A new technique for boosting efficiency of silicon solar cells

A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the system is a V-shaped module (VSM) with two tilted monocrystalline solar cells. Compared to solar cells in a flat orientation, the VSM enhances external quantum efficiency and leads to an increase of 31% in power conversion efficiency. Due to the VSM technique, short-circuit current density was raised from 24.94 to 33.7mA/cm(2), but both fill factor and open-circuit voltage were approximately unchanged. For the VSM similar results (about 30% increase) were obtained for solar cells fabricated by using mono-crystal line silicon wafers with only conventional background impurities. (c) 2004 Elsevier B.V. All rights reserved.

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter-base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in the base section by switching off the Cp2Mg source for appropriate time before the end of base growth. Low temperature growth of the undoped GaN spacer suppresses the Mg redistribution from Mg rich film. The delay rate of the Mg profile in sample C with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples A and B without low temperature spacer. (C) 2005 Elsevier Ltd. All rights reserved.

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

Deep levels in high resistivity GaN epilayers grown by MOCVD

Undoped high resistivity (HR) GaN epilayers were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Thermally stimulated current (TSC) and resistivity measurements have been carried out to investigate deep level traps. Deep levels with activation energies of 1.06eV and 0.85eV were measured in sample 1. Gaussian fitting of TSC spectra showed five deep levels in different samples. (c) 2006 WILEY VCH Vertag GmbH & Co. KGaA, Weinheim

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.