A new technique for boosting efficiency of silicon solar cells


Autoria(s): Li JM; Chong M; Yang LQ; Xu JD; Duan XF; Gao M; Wang FL; Liu HT; Bian L; Chi X; Zhai YH
Data(s)

2005

Resumo

A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the system is a V-shaped module (VSM) with two tilted monocrystalline solar cells. Compared to solar cells in a flat orientation, the VSM enhances external quantum efficiency and leads to an increase of 31% in power conversion efficiency. Due to the VSM technique, short-circuit current density was raised from 24.94 to 33.7mA/cm(2), but both fill factor and open-circuit voltage were approximately unchanged. For the VSM similar results (about 30% increase) were obtained for solar cells fabricated by using mono-crystal line silicon wafers with only conventional background impurities. (c) 2004 Elsevier B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/8826

http://www.irgrid.ac.cn/handle/1471x/63943

Idioma(s)

英语

Fonte

Li, JM; Chong, M; Yang, LQ; Xu, JD; Duan, XF; Gao, M; Wang, FL; Liu, HT; Bian, L; Chi, X; Zhai, YH .A new technique for boosting efficiency of silicon solar cells ,SOLAR ENERGY MATERIALS AND SOLAR CELLS,APR 1 2005,86 (4):585-591

Palavras-Chave #半导体材料 #silicon
Tipo

期刊论文