Deep levels in high resistivity GaN epilayers grown by MOCVD
| Data(s) |
2006
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| Resumo |
Undoped high resistivity (HR) GaN epilayers were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Thermally stimulated current (TSC) and resistivity measurements have been carried out to investigate deep level traps. Deep levels with activation energies of 1.06eV and 0.85eV were measured in sample 1. Gaussian fitting of TSC spectra showed five deep levels in different samples. (c) 2006 WILEY VCH Vertag GmbH & Co. KGaA, Weinheim Undoped high resistivity (HR) GaN epilayers were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Thermally stimulated current (TSC) and resistivity measurements have been carried out to investigate deep level traps. Deep levels with activation energies of 1.06eV and 0.85eV were measured in sample 1. Gaussian fitting of TSC spectra showed five deep levels in different samples. (c) 2006 WILEY VCH Vertag GmbH & Co. KGaA, Weinheim zhangdi于2010-03-29批量导入 Made available in DSpace on 2010-03-29T06:06:19Z (GMT). No. of bitstreams: 1 2349.pdf: 276514 bytes, checksum: 03fa159034c5db4ade2268c48f91536a (MD5) Previous issue date: 2006 Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
WILEY-VCH, INC 605 THIRD AVE, NEW YORK, NY 10158-0012 USA |
| Fonte |
Fang, CB; Wang, XL; Wang, JX; Liu, C; Wang, CM; Hu, GX; Li, JP; Li, CJ .Deep levels in high resistivity GaN epilayers grown by MOCVD .见：WILEY-VCH, INC .Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS ,605 THIRD AVE, NEW YORK, NY 10158-0012 USA ,2006,Vol 3 no 3 3 (3): 585-588 |
| Palavras-Chave | #半导体材料 #THERMALLY STIMULATED CURRENT #GALLIUM NITRIDE #DEFECTS |
| Tipo |
会议论文 |
