Study on in-plane optical anisotropy of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice by reflectance difference spectroscopy - art. no. 071908

Si0.75Ge0.25/Si/Si0.5Ge0.5 trilayer asymmetric superlattices were prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C. The nonlinear optical response caused by inherent asymmetric interfaces in this structure predicted by theories was verified by in-plane optical anisotropy in (001) plane measured via reflectance difference spectroscopy. The results show Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice is optically biaxial and the two optical eigen axes in (001) plane are along the directions [110] and [-110], respectively. Reflectance difference response between the above two eigen axes can be influenced by the width of the trilayers and reaches as large as similar to 10(-4)-10(-3) in 15-period 2.7 nm-Si0.75Ge0.25/8 nm-Si/1.3 nm-Si0.5Ge0.5 superlattice when the normal incident light wavelength is in the range of 500-1100 nm, which is quite remarkable because the optical anisotropy does not exist in bulk Si.

Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光

由于Si/SiGe异质结构的带阶差主要发生在价带,为实现高效率的发光,本文从理论上设计了在硅基Si_(1-x) Ge_x虚衬底上外延应变补偿的Si/S_(1-y) Ge_y(y>x)量子阱的能带结构,将量子阱对电子的限制势垒提高到100meV以上.在实验上,采用300℃生长的Ge量子点插入层,制备出薄的SiGe驰豫缓冲层(虚衬底),表面Ge组份达到0.25,表面粗糙度小于2nm,驰豫度接近100%.在我们制备的SiGe缓冲层上外延了应变补偿SiGe/Si多量子阱结构,并初步研究了其发光特性.

Monolithically Integrated Optoelectronic Receivers Implemented in 0. 25μm MS/RF CMOS

A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler

A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.

丘陵半干旱区春小不知所云水肥耦合效应

采用312-D最优饱和设计，在丘陵半干旱区开展了连续4年的田间试验，深入地研究了春小麦水肥祸合效应。水肥单因子对产量和水分利用效率（WUE）有显著影响，大小顺序为：水＞磷＞氮，其中三个因子对产量的提高均是正效应，而对WUE的提高，氮、磷施用量是正效应，过量灌溉是负效应；两因子间祸合作用的强弱顺序为：氮与水祸合＞氮与磷祸合＞磷与水祸合，其中氮与磷祸合，以及氮与水祸合对提高产量和认心E均表现为极显著相互促进作用，而磷与水祸合表现为不显著的相互替代作用。水肥祸合通过提高气孔导度（Gs）、蒸腾速率（Tr）、叶表面相对湿度（RH）、叶内水浓度（Hi）和降低胞间COZ浓度（Ci），来提高叶片光合速率（Pn）。氮素营养缺乏引起叶片“光合午休”现象的发生，增加施氮量可以避免“光合午休”现象的发生。籽粒产量与灌浆期叶片Pn呈正相关。水肥单因子对叶片Pn影响的大小顺序是：氮＞磷＞水；因子间藕合作用强弱顺序为：氮与水棍合＞磷与水祸合＞氮与磷祸合。水肥优化管理是提高产量、叶片Pn及WUE的重要途径。中等用量的氮、磷、水藕合可以达到高产、高效，获得较高的WUE和叶片Pn，实现节水高产高效与较高叶片Pn的统一，为春小麦科学灌溉施肥提供了理论依据。