AlGaN／GaN背对背肖特基二极管氢气传感器

通过溅射的方法制作了Pt／AIGaN／GaN背对背肖特基二极管并测试了该器件对氢气的响应．研究了Pt／AlGaN／GaN背对背肖特基二极管在25和100℃时对于10％H_2（N_2气中）的响应，计算了器件的灵敏度；并比较了两种温度条件下器件对于氢气响应的快慢；空气中的氧气对于器件电流的恢复有重要的作用；最后由热电子发射公式计算了器件在通人10％的氢气前后有效势垒高度的变化．

A High-Efficiency Fiber-to-Waveguide Coupler with Low Polarization Dependence Using a Diluted Waveguide in InP Substrate with a 1.55μm Wavelength

We propose a fiber-to-waveguide coupler for side-illuminated p-i-n photodiodes to obtain high responsivity and low polarization dependence that is grown on InP substrate and is suitable for surface hybrid integration in low cost modules. The fiber-to-waveguide coupler is based on a diluted waveguide,which is composed of ten periods of undoped 120nm InP/80nm InGaAsP （1.05μm bandgap） multiple layers. Using the semi-vectorial three dimensional beam propagation method （BPM） with the central difference scheme,the coupling efficiency of fiber-to-waveguide under different conditions is simulated and studied,and the optimized conditions for fiber-to-waveguide coupling are obtained. For TE-like and TM-like modes,the calculated maximum coupling efficiency is higher than 94% and 92% ,respectively. The calculated polarization dependence is less than 0. ldB,showing good polarization independence.

Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition

ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement （XRD） results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy （SEM） image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge （3. 33eV） emissions with little or no deep-level e- mission related to defects.

Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd ! YVO, 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7. 5 W, 2. 81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37. 5% , and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.

808-nm fiber coupled module with a CW output power up to 130 W

A fiber coupled module is fabricated with integrating the emitting light from four laser diode bars into multimode fiber bundle. The continuous wave (CW) output power of the module is about 130 W with a coupling efficiency of around 80%. The output power is very stable after the temperature cycling and vibration test. No apparent power decrease has been observed as the device working continuously for 500 h.

分布反馈光纤激光器模式特性分析

根据耦合波理论,在分析分布反馈(DFB)光纤激光器纵模特性的基础上,着重阐述其偏振特性。另外给出了偏振态同耦合系数和双偏振态相移量差的关系。理论分析结果表明,当分布反馈光纤激光器输出为0阶模时,输出激光的偏振状态由耦合系数和双偏振态的相移量差共同决定,即在耦合系数一定的情况下,通过增加双偏振态相移量的差,或在双偏振态相移量差一定的情况下,通过减小耦合系数,可以实现单偏振输出。实验中在经载氢处理的掺铒光纤上制作分布反馈光纤激光器,由于耦合系数较大和双折射效应过小,输出为双偏振态。

光致发光谱研究自组织InAs双模量子点态填充

采用固态源分子束外延技术在GaAs（100）衬底上，制备了InAs量子点，对样品进行原子力显微镜测试，统计结果表明量子点尺寸呈双模分布。光致发光谱研究表明，在室温和77K下，小量子点的发光峰均占主导地位，原因可能是

AlGaN／GaN异质结紫外探测器

采用p-AlGa1-xN／i-GaN／n-GaN异质结构成功制备了含铝组分分别为0．1和0．07的正照射可见盲紫外探测器，并分别测试了它们的伏安特性曲线和光电响应光谱。对于Al组分为0．1的器件，在零偏压处出现了板低的暗电流密度，表明器件具有非常高的信噪比。高分辨率X射线衍射仪对材料的测试结果表明，高铝组分（0．1）窗口层薄膜材料的晶体质量较差，导致暗电流增大，而其窗口层的窗口选择作用则可以得到较高的响应率和较宽的响应波段。

键合界面对面发射激光器的光、热性质影响

分析了采用双面键合长波长面发射激光器时，键合界面光吸收系数和电、热导率的变化对器件的光、热性质的影响。对于1入光学腔的面发射激光器，键合界面吸收系数对器件光学性能影响较大，而对于1．5入光学腔的面发射激光器，其光学性能基本不受键合界面吸收系数的影响。由有限元方法对面发射激光器的温度分布计算结果可知，当键合界面电、热导率小于GaAs电、热导率的1％时，激光器有源层的温度会有较大的上升。

盘片式光纤传感器灵敏度计算方法

系统地开展了对各类盘片式光纤传感器灵敏度的研究工作。以周边固支、中心镶嵌刚性质量块的盘片式光纤加速度传感器为例，分析了传感器弹性盘片上各点的应力应变状态；结合迈克耳孙干涉仪原理，建立了计算传感器加速度灵敏度的数学模型，并讨论了粘贴光纤盘的最佳尺寸。制作两个相应的传感器进行对比实验，验证了上述计算模型的正确性。采用上述模型系统地推导了不同边界条件情况下盘片式光纤传感器的粘贴区域和灵敏度计算公式。对盘片式光纤传感器如光纤加速度传感器、光纤压力传感器、光纤水听器等的设计制作具有理论指导作用。

多段式半导体激光器的研究进展

综述了多段式半导体激光器的研究进展。按结构不同，将它们分为两段式、三段式和四段式激光器进行讨论。重点介绍了几类具有典型结构的单片式集成激光器，总结了它们的设计背景、设计目的、基本设计思想、性能特点和基本用途，讨论了这些器件结构的共同点，指出两段式、三段式和四段式激光器研究上的关联和各自的研究重点。分析了多段式半导体激光器的发展趋势，展望了它们的应用前景。

高密度排列大功率垂直腔面发射激光器列阵

报道了980nm高密度排列大功率垂直腔面发射激光器列阵的研制.列阵单元为蜂窝状密堆积排列,单元台面直径为70μm,氧化孔径为30μm,相邻单元间隔为100μm.制作了含7,19,37个单元的列阵,讨论了它们的阈值电流和远场特性.在室温连续工作条件下,3种列阵的最大输出功率分别为0.26,0.5和0.6W.其中含37个单元的列阵在6A脉冲电流(脉宽30μs,重复频率100Hz)激发下,输出功率达到1.4W.

Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET

Radiation hardness of SIMOX(separation by implanted oxygen)/NMOSFET by implanting N and F ion has been carefully studied in this paper.Both N and F ion implantation can reduce hole traps in the buried oxide and the interfacial regions,which consequently improves the radiation hardness,especially under high dose radiation conditions.Moreover,experimental data show that the higher dose of the N and F ion implantation is,the better radiation hardness is achieved.In order to minimize the influence on the threshold voltage of devices,it is important to choose suitable implantation dose and energy of N or F implantation that have smaller impact on the preradiation device performance.

采用单步光刻和湿法腐蚀工艺制作高性能衍射微透镜

采用单步光刻和湿法腐蚀工艺,低成本快速制作面向高性能蓝光和红光DVD光学头物镜的衍射微透镜.所制微光学结构的表面粗糙度在纳米量级,衍射相位台阶的高度在亚微米量级并可以根据需求灵活调整,通光孔径在毫米至厘米量级的范围内可调.组成衍射微透镜的大量基本相位结构,可以根据入射和出射光束的形貌特征及参数指标,通过衍射积分算法灵活设置和排布.远场光学测试显示了所制衍射微透镜的高衍射效能.

面向高速应用的10位2GHz数模转换器

提出了一个刷新率达2GHz的10位电流驱动型数模转换器.在综合了精度与芯片面积等因素之后,该数模转换器使用6+4结构.采用电流型逻辑以提高转换器的速度,并采用Q~2 random walk方法设计了一个双中心对称的电流矩阵,确保数模转换器的线性度.该数模转换器核心版图面积为2.2mm×2.2mm,在3.3V单电压供电的情况下,该芯片功耗为790mW.